公开(公告)号：US12033682B2

公开(公告)日：2024-07-09

申请号：US17563100

申请日：2021-12-28

Applicant: Industrial Technology Research Institute

Inventor： Hsin-Han Lee ,  Jeng-Hua Wei ,  I-Jung Wang ,  Shan-Yi Yang ,  Yao-Jen Chang ,  Fang-Ming Chen

IPC: G11C11/16 ,  H10B61/00 ,  H10N50/80 ,  H10N50/85 ,  H10N52/80

CPC classification number: G11C11/161 ,  G11C11/1675 ,  H10B61/00 ,  H10N50/80 ,  H10N50/85 ,  H10N52/80

Abstract: An in-plane magnetized spin-orbit magnetic device is provided. The in-plane magnetized spin-orbit magnetic device includes a heavy metal layer, an antiferromagnetic layer, and a magnetic tunnel junction. The antiferromagnetic layer is disposed on the heavy metal layer, and the magnetic tunnel junction is disposed on the antiferromagnetic layer. The magnetic tunnel junction includes a free layer, a barrier layer, and a pinned layer. The barrier layer is disposed on the free layer, and the pinned layer is disposed on the barrier layer. A film surface shape of the free layer is a rounded rectangle.

公开(公告)号：US20230178130A1

公开(公告)日：2023-06-08

申请号：US17563100

申请日：2021-12-28

Applicant: Industrial Technology Research Institute

Inventor： Hsin-Han Lee ,  Jeng-Hua Wei ,  I-Jung Wang ,  Shan-Yi Yang ,  Yao-Jen Chang ,  Fang-Ming Chen

IPC: G11C11/16 ,  H01L43/02 ,  H01L27/22 ,  H01L43/10

CPC classification number: G11C11/161 ,  G11C11/1675 ,  H01L43/02 ,  H01L27/222 ,  H01L43/10

Abstract: An in-plane magnetized spin-orbit magnetic device is provided. The in-plane magnetized spin-orbit magnetic device includes a heavy metal layer, an antiferromagnetic layer, and a magnetic tunnel junction. The antiferromagnetic layer is disposed on the heavy metal layer, and the magnetic tunnel junction is disposed on the antiferromagnetic layer. The magnetic tunnel junction includes a free layer, a barrier layer, and a pinned layer. The barrier layer is disposed on the free layer, and the pinned layer is disposed on the barrier layer. A film surface shape of the free layer is a rounded rectangle.