公开(公告)号：US12094837B2

公开(公告)日：2024-09-17

申请号：US18106028

申请日：2023-02-06

Applicant: Infineon Technologies AG

Inventor： Christian Gruber ,  Benjamin Bernard ,  Tobias Polster ,  Carsten von Koblinski

IPC: H01L23/00 ,  H01L21/768 ,  H01L21/78 ,  H01L23/538

CPC classification number: H01L23/562 ,  H01L21/76802 ,  H01L21/76877 ,  H01L21/78 ,  H01L23/5386

Abstract: A method of manufacturing a semiconductor device includes: forming grooves in a front side surface of a wafer; filling the grooves with a first side face protection material; thinning the wafer at a backside surface of the wafer opposite the front side surface; depositing a backside metallization layer over the backside surface of the thinned wafer; and laser cutting along the grooves through the side face protection material and through the backside metallization layer to separate the wafer into multiple semiconductor devices.

公开(公告)号：US20210143108A1

公开(公告)日：2021-05-13

申请号：US17071022

申请日：2020-10-15

Applicant: Infineon Technologies AG

Inventor： Christian Gruber ,  Benjamin Bernard ,  Tobias Polster ,  Carsten von Koblinski

IPC: H01L23/00 ,  H01L21/78 ,  H01L21/768 ,  H01L23/538

Abstract: A semiconductor device includes a semiconductor die having a front side surface, a backside surface opposite the front side surface and side faces. A backside metallization layer is deposited over the backside surface and projects laterally outwards beyond the side faces. A side face protection layer covers the side faces.

公开(公告)号：US20230187381A1

公开(公告)日：2023-06-15

申请号：US18106028

申请日：2023-02-06

Applicant: Infineon Technologies AG

Inventor： Christian Gruber ,  Benjamin Bernard ,  Tobias Polster ,  Carsten von Koblinski

IPC: H01L23/00 ,  H01L21/768 ,  H01L21/78 ,  H01L23/538

CPC classification number: H01L23/562 ,  H01L21/76802 ,  H01L21/76877 ,  H01L21/78 ,  H01L23/5386

Abstract: A method of manufacturing a semiconductor device includes: forming grooves in a front side surface of a wafer; filling the grooves with a first side face protection material; thinning the wafer at a backside surface of the wafer opposite the front side surface; depositing a backside metallization layer over the backside surface of the thinned wafer; and laser cutting along the grooves through the side face protection material and through the backside metallization layer to separate the wafer into multiple semiconductor devices.

公开(公告)号：US11605599B2

公开(公告)日：2023-03-14

申请号：US17071022

申请日：2020-10-15

Applicant: Infineon Technologies AG

Inventor： Christian Gruber ,  Benjamin Bernard ,  Tobias Polster ,  Carsten von Koblinski

IPC: H01L23/538 ,  H01L23/00 ,  H01L21/768 ,  H01L21/78

Abstract: A semiconductor device includes a semiconductor die having a front side surface, a backside surface opposite the front side surface and side faces. A backside metallization layer is deposited over the backside surface and projects laterally outwards beyond the side faces. A side face protection layer covers the side faces.

公开(公告)号：US20220339740A1

公开(公告)日：2022-10-27

申请号：US17691763

申请日：2022-03-10

Applicant: Infineon Technologies AG

Inventor： Benjamin Bernard ,  Alexander Binter ,  Heimo Graf

IPC: B23K26/53 ,  H01L21/268 ,  B23K26/06 ,  B23K26/067 ,  B23K26/073 ,  B23K26/0622 ,  B28D5/00

Abstract: A method of splitting a semiconductor work piece includes: forming a separation zone within the semiconductor work piece, wherein forming the separation zone comprises modifying semiconductor material of the semiconductor work piece at a plurality of targeted positions within the separation zone in at least one physical property which increases thermo-mechanical stress within the separation zone relative to a remainder of the semiconductor work piece, wherein modifying the semiconductor material in one of the targeted positions comprises focusing at least two laser beams to the targeted position; and applying an external force or stress to the semiconductor work piece such that at least one crack propagates along the separation zone and the semiconductor work piece splits into two separate pieces. Additional work piece splitting techniques and techniques for compensating work piece deformation that occurs during the splitting process are also described.

公开(公告)号：US12170226B2

公开(公告)日：2024-12-17

申请号：US18620327

申请日：2024-03-28

Applicant: Infineon Technologies AG

Inventor： Franz-Josef Pichler ,  Benjamin Bernard ,  Mario Stefenelli

IPC: H01L21/82 ,  H01L21/02 ,  H01L21/268 ,  H01L21/304 ,  H01L21/324 ,  H01L21/683 ,  H01L29/16

Abstract: A method for separating dies from a semiconductor substrate having dies adjoining a first surface of the substrate includes: attaching the substrate to a carrier via the first surface; generating first modifications by introducing laser irradiation into an interior of the substrate via a second surface of the substrate, the first modifications extending between the first surface and a vertical level in the interior that is being spaced from the second surface, the first modifications laterally surrounding the dies; generating second modifications by introducing laser irradiation into the interior via the second surface, the second modifications sub-dividing the substrate into a first part between the first surface and the second modifications, and a second part between the second surface and the second modifications; separating the parts along a first separation area defined by the second modifications; and separating the dies along a second separation area defined by the first modifications.

公开(公告)号：US20240371793A1

公开(公告)日：2024-11-07

申请号：US18774282

申请日：2024-07-16

Applicant: Infineon Technologies AG

Inventor： Christian Gruber ,  Benjamin Bernard ,  Tobias Polster ,  Carsten von Koblinski

IPC: H01L23/00 ,  H01L21/768 ,  H01L21/78 ,  H01L23/538

Abstract: A semiconductor device includes: a semiconductor die having a front side surface, a backside surface opposite the front side surface, and side faces; a backside metallization layer at least partly covering the backside surface of the semiconductor die and projecting laterally outwards beyond the side faces of the semiconductor die; and a protection layer at least partly covering the side faces of the semiconductor die. The backside metallization layer projects laterally outwards beyond the protection layer.

公开(公告)号：US20240339361A1

公开(公告)日：2024-10-10

申请号：US18620327

申请日：2024-03-28

Applicant: Infineon Technologies AG

Inventor： Franz-Josef Pichler ,  Benjamin Bernard ,  Mario Stefenelli

IPC: H01L21/82 ,  H01L21/02 ,  H01L21/268 ,  H01L21/304 ,  H01L21/324 ,  H01L21/683 ,  H01L29/16

CPC classification number: H01L21/8213 ,  H01L21/02118 ,  H01L21/268 ,  H01L21/304 ,  H01L21/324 ,  H01L21/6836 ,  H01L29/1608 ,  H01L2221/68309 ,  H01L2221/68327 ,  H01L2221/68381

Abstract: A method for separating dies from a semiconductor substrate having dies adjoining a first surface of the substrate includes: attaching the substrate to a carrier via the first surface; generating first modifications by introducing laser irradiation into an interior of the substrate via a second surface of the substrate, the first modifications extending between the first surface and a vertical level in the interior that is being spaced from the second surface, the first modifications laterally surrounding the dies; generating second modifications by introducing laser irradiation into the interior via the second surface, the second modifications sub-dividing the substrate into a first part between the first surface and the second modifications, and a second part between the second surface and the second modifications; separating the parts along a first separation area defined by the second modifications; and separating the dies along a second separation area defined by the first modifications.