公开(公告)号：US20220262693A1

公开(公告)日：2022-08-18

申请号：US17177703

申请日：2021-02-17

Applicant: Infineon Technologies AG

Inventor： Oliver Markus Kreiter ,  Ludwig Busch ,  Angel Enverga ,  Mei Fen Hiew ,  Tian See Hoe ,  Elvis Keli ,  Kean Ming Koe ,  Sanjay Kumar Murugan ,  Michael Niendorf ,  Ivan Nikitin ,  Bernhard Stiller ,  Thomas Stoek ,  Ke Yan Tean

IPC: H01L23/31 ,  H01L23/495 ,  H01L21/48 ,  H01L21/56

Abstract: A semiconductor module includes: a dual-gauge leadframe having thicker and thinner parts, part of the thinner part forming a high voltage lead; a semiconductor die attached to the thicker part; and a molding compound (MC) encapsulating the die. The thicker leadframe part is disposed at a bottom side of the MC. A side face of the MC has a stepped region between the high voltage lead and thicker leadframe part. A first generally vertical part of the stepped region extends from the high voltage lead to the generally horizontal part, a generally horizontal part of the stepped region extends to the second generally vertical part, and a second generally vertical part of the stepped region extends to the bottom side of the MC. A linear dimension of the generally horizontal part as measured from the first generally vertical part to the second generally vertical part is at least 4.5 mm.

公开(公告)号：US11621204B2

公开(公告)日：2023-04-04

申请号：US17177703

申请日：2021-02-17

Applicant: Infineon Technologies AG

Inventor： Oliver Markus Kreiter ,  Ludwig Busch ,  Angel Enverga ,  Mei Fen Hiew ,  Tian See Hoe ,  Elvis Keli ,  Kean Ming Koe ,  Sanjay Kumar Murugan ,  Michael Niendorf ,  Ivan Nikitin ,  Bernhard Stiller ,  Thomas Stoek ,  Ke Yan Tean

IPC: H01L23/495 ,  H01L23/31 ,  H01L21/56 ,  H01L21/48

Abstract: A semiconductor module includes: a dual-gauge leadframe having thicker and thinner parts, part of the thinner part forming a high voltage lead; a semiconductor die attached to the thicker part; and a molding compound (MC) encapsulating the die. The thicker leadframe part is disposed at a bottom side of the MC. A side face of the MC has a stepped region between the high voltage lead and thicker leadframe part. A first generally vertical part of the stepped region extends from the high voltage lead to the generally horizontal part, a generally horizontal part of the stepped region extends to the second generally vertical part, and a second generally vertical part of the stepped region extends to the bottom side of the MC. A linear dimension of the generally horizontal part as measured from the first generally vertical part to the second generally vertical part is at least 4.5 mm.