POWER SEMICONDUCTOR MODULE WITH CLAMPING DEVICE

    公开(公告)号:US20220093486A1

    公开(公告)日:2022-03-24

    申请号:US17027772

    申请日:2020-09-22

    Abstract: A power semiconductor module includes: a carrier; a plurality of semiconductor dies attached to a first side of the carrier and electrically connected to form a circuit or part of a circuit; a cooling device at a second side of the carrier opposite the first side; a clamping device attached to the cooling device and pressing the carrier toward the cooling device such that the second side of the carrier is in thermal contact with the cooling device without having an intervening base plate between the carrier and the cooling device; and a first sensor device embedded in the clamping device or attached to an interior surface of the clamping device.

    Power electronics module and method for fabricating a power electronics module

    公开(公告)号:US11937413B2

    公开(公告)日:2024-03-19

    申请号:US17675446

    申请日:2022-02-18

    CPC classification number: H05K7/20927 H01L23/36 H01L25/0655 H02M1/327

    Abstract: A power electronics module includes at least one first substrate having on a first side one or more first semiconductor dies, the one or more first semiconductor dies and the at least one first substrate providing a higher power part of the power electronics module, at least one second substrate having on a first side one or more second semiconductor dies, the one or more second semiconductor dies and the at least one second substrate providing a lower power part of the power electronics module, and a common frame at least partially encasing the first and second substrates and being a monobloc part, the higher power part being configured for direct liquid cooling and the lower power part being configured for indirect cooling.

    Base Plate for a Semiconductor Module Arrangement and Method for Producing a Base Plate

    公开(公告)号:US20220005708A1

    公开(公告)日:2022-01-06

    申请号:US17362076

    申请日:2021-06-29

    Abstract: A method comprises producing a base plate, wherein producing the base plate comprises forming a layer of a metallic material, and forming at least one first area in the layer of metallic material, wherein forming the at least one first area either comprises locally deforming the layer of metallic material, or locally inducing stress into the layer of metallic material, or both such that a deflection or a local stress or both in the at least one first area differs from a deflection or a local stress or both of those areas of the metallic layer surrounding the at least one first area.

    POWER ELECTRONICS MODULE AND METHOD FOR FABRICATING A POWER ELECTRONICS MODULE

    公开(公告)号:US20220287209A1

    公开(公告)日:2022-09-08

    申请号:US17675446

    申请日:2022-02-18

    Abstract: A power electronics module includes at least one first substrate having on a first side one or more first semiconductor dies, the one or more first semiconductor dies and the at least one first substrate providing a higher power part of the power electronics module, at least one second substrate having on a first side one or more second semiconductor dies, the one or more second semiconductor dies and the at least one second substrate providing a lower power part of the power electronics module, and a common frame at least partially encasing the first and second substrates and being a monobloc part, the higher power part being configured for direct liquid cooling and the lower power part being configured for indirect cooling.

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