公开(公告)号：US20240090355A1

公开(公告)日：2024-03-14

申请号：US18454852

申请日：2023-08-24

Applicant: Infineon Technologies AG

Inventor： Saurabh Roy ,  Josef Anton Moser ,  Hans-Joachim Schulze

IPC: H10N99/00

CPC classification number: H10N99/03

Abstract: A piezoresistive transistor device includes a first transistor cell having a first piezoelectric material body and a first piezoresistive material body arranged in a stacked configuration. A first electrical resistance of the first piezoresistive material body is dependent upon a voltage applied across the first piezoelectric material body by way of a pressure applied by the first piezoelectric material body to the first piezoresistive material body. A second transistor cell includes a second piezoelectric material body and a second piezoresistive material body arranged in a stacked configuration. A second electrical resistance of the second piezoresistive material body is dependent upon a voltage applied across the second piezoelectric material body by way of a pressure applied by the second piezoelectric material body to the second piezoresistive material body. An internal electrical interconnect is configured to electrically connect the first electrical resistance and the second electrical resistance in series or in parallel.

公开(公告)号：US20230178615A1

公开(公告)日：2023-06-08

申请号：US18072965

申请日：2022-12-01

Applicant: Infineon Technologies AG

Inventor： Saurabh Roy ,  Hans-Joachim Schulze ,  Oliver Blank ,  Josef Anton Moser ,  Thomas Aichinger

IPC: H01L29/423 ,  H01L29/10 ,  H01L29/40 ,  H01L29/78

CPC classification number: H01L29/4236 ,  H01L29/1095 ,  H01L29/1033 ,  H01L29/407 ,  H01L29/7813

Abstract: A power transistor device includes a semiconductor substrate, a gate trench extending into the semiconductor substrate, a transistor gate provided in the gate trench, and an insulating structure formed between the transistor gate and a side wall of the gate trench. The insulating structure is configured to electrically insulate the transistor gate from a channel region which extends along the side wall of the gate trench. The insulating structure includes a layer of piezoelectric material.