公开(公告)号：US10566426B2

公开(公告)日：2020-02-18

申请号：US15848707

申请日：2017-12-20

Applicant: Infineon Technologies AG

Inventor： Anton Mauder ,  Oliver Hellmund ,  Peter Irsigler ,  Jens Peter Konrath ,  David Laforet ,  Maik Langner ,  Markus Neuber ,  Hans-Joachim Schulze ,  Ralf Siemieniec ,  Knut Stahrenberg ,  Olaf Storbeck

IPC: H01L21/02 ,  H01L29/16 ,  H01L21/28 ,  H01L29/51

Abstract: A body structure and a drift zone are formed in a semiconductor layer, wherein the body structure and the drift zone form a first pn junction. A silicon nitride layer is formed on the semiconductor layer. A silicon oxide layer is formed from at least a vertical section of the silicon nitride layer by oxygen radical oxidation.