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公开(公告)号:US20240332166A1
公开(公告)日:2024-10-03
申请号:US18129873
申请日:2023-04-02
Applicant: Intel Corporation
Inventor: Seda CEKLI , Sudipto NASKAR , Ananya DUTTA , Supanee SUKRITTANON , Akshit PEER , Navneethakrishnan SALIVATI , Jeffery BIELEFELD , Makram ABD EL QADER , Mauro J. KOBRINSKY , Sachin VAIDYA
IPC: H01L23/522 , H01L21/768 , H01L23/532
CPC classification number: H01L23/5226 , H01L21/7682 , H01L21/76832 , H01L21/76834 , H01L23/53295
Abstract: Integrated circuit structures having air gaps are described. In an example, an integrated circuit structure includes alternating conductive lines and air gaps above a first dielectric layer. A dielectric structure is between adjacent ones of the conductive lines and over the air gaps. A first etch stop layer is on the dielectric structure but not on the conductive lines. A second etch stop layer is on the first etch stop layer and on the conductive lines. A second dielectric layer is above the second etch stop layer. A conductive via structure is in the second dielectric layer, in the second etch stop layer, and on one of the conductive lines.
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公开(公告)号:US20250105148A1
公开(公告)日:2025-03-27
申请号:US18372970
申请日:2023-09-26
Applicant: Intel Corporation
Inventor: Marvin PAIK , June CHOI , Shao Ming KOH , Supanee SUKRITTANON , Ananya DUTTA , Sudipto NASKAR
IPC: H01L23/528 , H01L21/768 , H01L23/532
Abstract: Embodiments of the disclosure are in the field of integrated circuit structure fabrication. In an example, an integrated circuit structure includes a plurality of conductive lines on a same level and along a same direction, a first one of the plurality of conductive lines having a first width and a first composition, and a second one of the plurality of conductive lines having a second width and a second composition. The second width greater than the first width, and the second composition is different than the first composition. The second one of the plurality of conductive lines has an uppermost surface above an uppermost surface of the first one of the plurality of conductive lines.
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