公开(公告)号：US11482433B2

公开(公告)日：2022-10-25

申请号：US16932594

申请日：2020-07-17

Applicant: Intel Corporation

Inventor： Ashutosh Sagar ,  Chao-Kai Liang ,  Miye Hopkins ,  Weimin Han ,  Robert James

IPC: H01L21/67 ,  H05B6/70 ,  H01L21/677

Abstract: Stacked thermal process chamber module for remote radiative heating of semiconductor device workpieces. A stacked thermal process module may include a stack of thermal process chambers and one or more generators of electromagnetic radiation. The electromagnetic radiation may be transported from a generator remote from the process chambers through one or more waveguides, thereby minimizing the volume and/or cleanroom footprint of the stacked thermal process chamber module. A waveguide may terminate in a process chamber so that electromagnetic radiation delivered during a thermal process may be coupled into one or more materials of the workpiece. The radiative heating process may overcome many of the limitations of thermal process chambers that instead employ a local heat source located within a process chamber.

公开(公告)号：US20200066841A1

公开(公告)日：2020-02-27

申请号：US16461071

申请日：2016-12-12

Applicant: Intel Corporation

Inventor： Ashutosh Sagar ,  Sridhar Govindaraju

IPC: H01L29/08 ,  H01L29/78 ,  H01L29/45 ,  H01L29/66

Abstract: An apparatus includes a non-planar semiconductor body; and a contact for the semiconductor body. The contact includes an epitaxial material that is formed on and contacts the semiconductor body. The contact includes a second material that is formed on and contacts the epitaxial material; and the second material at least partially conforms to an undercut of the epitaxial material.

公开(公告)号：US11978776B2

公开(公告)日：2024-05-07

申请号：US16461071

申请日：2016-12-12

Applicant: Intel Corporation

Inventor： Ashutosh Sagar ,  Sridhar Govindaraju

IPC: H01L29/417 ,  H01L21/8234 ,  H01L29/45 ,  H01L29/66 ,  H01L29/78

CPC classification number: H01L29/41791 ,  H01L21/823418 ,  H01L21/823431 ,  H01L29/66795 ,  H01L29/7851 ,  H01L29/7853 ,  H01L29/456 ,  H01L29/785 ,  H01L2029/7858 ,  H01L2224/16502 ,  H01L2924/01322 ,  H01L2924/014

Abstract: An apparatus includes a non-planar semiconductor body; and a contact for the semiconductor body. The contact includes an epitaxial material that is formed on and contacts the semiconductor body. The contact includes a second material that is formed on and contacts the epitaxial material; and the second material at least partially conforms to an undercut of the epitaxial material.

公开(公告)号：US20220020613A1

公开(公告)日：2022-01-20

申请号：US16932594

申请日：2020-07-17

Applicant: Intel Corporation

Inventor： Ashutosh Sagar ,  Chao-Kai Liang ,  Miye Hopkins ,  Weimin Han ,  Robert James

IPC: H01L21/67 ,  H05B6/70

Abstract: Stacked thermal process chamber module for remote radiative heating of semiconductor device workpieces. A stacked thermal process module may include a stack of thermal process chambers and one or more generators of electromagnetic radiation. The electromagnetic radiation may be transported from a generator remote from the process chambers through one or more waveguides, thereby minimizing the volume and/or cleanroom footprint of the stacked thermal process chamber module. A waveguide may terminate in a process chamber so that electromagnetic radiation delivered during a thermal process may be coupled into one or more materials of the workpiece. The radiative heating process may overcome many of the limitations of thermal process chambers that instead employ a local heat source located within a process chamber.