公开(公告)号：US20240332301A1

公开(公告)日：2024-10-03

申请号：US18129871

申请日：2023-04-02

Applicant: Intel Corporation

Inventor： Willy RACHMADY ,  Caleb BARRETT ,  Prashant WADHWA ,  Chun-Kuo HUANG ,  Conor P. PULS ,  Daniel James HARRIS ,  Giorgio MARIOTTINI ,  Patrick MORROW

IPC: H01L27/092 ,  H01L21/8238 ,  H01L29/06 ,  H01L29/423 ,  H01L29/66 ,  H01L29/775 ,  H01L29/78 ,  H01L29/786

CPC classification number: H01L27/0924 ,  H01L21/823807 ,  H01L21/823821 ,  H01L29/0673 ,  H01L29/42392 ,  H01L29/66439 ,  H01L29/66545 ,  H01L29/66795 ,  H01L29/775 ,  H01L29/7851 ,  H01L29/78696

Abstract: Integrated circuit structures having sub-fin isolation, and methods of fabricating integrated circuit structures having sub-fin isolation, are described. For example, an integrated circuit structure includes a channel structure, and an oxide sub-fin structure over the channel structure, the oxide sub-fin structure including silicon and oxygen and aluminum.