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公开(公告)号:US20150108660A1
公开(公告)日:2015-04-23
申请号:US14588183
申请日:2014-12-31
Applicant: Intel Corporation
Inventor: Pete Vogt , Andre Schaefer , Warren Morrow , John Halbert , Jin Kim , Kenneth Shoemaker
IPC: H01L25/065 , G11C5/06 , H01L27/108 , H01L23/48
CPC classification number: H01L25/0657 , G11C5/06 , H01L23/481 , H01L24/16 , H01L27/108 , H01L27/10882 , H01L27/10897 , H01L2224/16146 , H01L2225/06513 , H01L2225/06517 , H01L2225/06541
Abstract: A stacked memory with interface providing offset interconnects. An embodiment of memory device includes a system element and a memory stack coupled with the system element, the memory stack including one or more memory die layers. Each memory die layer includes first face and a second face, the second face of each memory die layer including an interface for coupling data interface pins of the memory die layer with data interface pins of a first face of a coupled element. The interface of each memory die layer includes connections that provide an offset between each of the data interface pins of the memory die layer and a corresponding data interface pin of the data interface pins of the coupled element.
Abstract translation: 具有提供偏移互连的接口的堆叠存储器。 存储器件的实施例包括与系统元件耦合的系统元件和存储器堆栈,存储器堆栈包括一个或多个存储器管芯层。 每个存储器管芯层包括第一面和第二面,每个存储管芯层的第二面包括用于将存储管芯层的数据接口引脚与耦合元件的第一面的数据接口引脚耦合的接口。 每个存储器管芯层的接口包括在存储管芯层的每个数据接口引脚和耦合元件的数据接口引脚的相应数据接口引脚之间提供偏移的连接。
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公开(公告)号:US09768148B2
公开(公告)日:2017-09-19
申请号:US14588183
申请日:2014-12-31
Applicant: Intel Corporation
Inventor: Pete Vogt , Andre Schaefer , Warren Morrow , John Halbert , Jin Kim , Kenneth Shoemaker
IPC: G11C5/06 , H01L25/065 , H01L27/108 , H01L23/48 , H01L23/00
CPC classification number: H01L25/0657 , G11C5/06 , H01L23/481 , H01L24/16 , H01L27/108 , H01L27/10882 , H01L27/10897 , H01L2224/16146 , H01L2225/06513 , H01L2225/06517 , H01L2225/06541
Abstract: A stacked memory with interface providing offset interconnects. An embodiment of memory device includes a system element and a memory stack coupled with the system element, the memory stack including one or more memory die layers. Each memory die layer includes first face and a second face, the second face of each memory die layer including an interface for coupling data interface pins of the memory die layer with data interface pins of a first face of a coupled element. The interface of each memory die layer includes connections that provide an offset between each of the data interface pins of the memory die layer and a corresponding data interface pin of the data interface pins of the coupled element.
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