公开(公告)号：US20230326794A1

公开(公告)日：2023-10-12

申请号：US18207047

申请日：2023-06-07

Applicant: Intel Corporation

Inventor： Leonard P. GULER ,  Michael HARPER ,  Suzanne S. RICH ,  Charles H. WALLACE ,  Curtis WARD ,  Richard E. SCHENKER ,  Paul NYHUS ,  Mohit K. HARAN ,  Reken PATEL ,  Swaminathan SIVAKUMAR

IPC: H01L21/768 ,  H01L21/033 ,  H01L21/8234

CPC classification number: H01L21/76897 ,  H01L21/0337 ,  H01L21/823412 ,  H01L21/823475

Abstract: Embodiments disclosed herein include semiconductor devices and methods of forming such devices. In an embodiment a semiconductor device comprises a first interlayer dielectric (ILD), a plurality of source/drain (S/D) contacts in the first ILD, a plurality of gate contacts in the first ILD, wherein the gate contacts and the S/D contacts are arranged in an alternating pattern, and wherein top surfaces of the gate contacts are below top surfaces of the S/D contacts so that a channel defined by sidewall surfaces of the first ILD is positioned over each of the gate contacts, mask layer partially filling a first channel over a first gate contact, and a fill metal filling a second channel over a second gate contact that is adjacent to the first gate contact.

公开(公告)号：US20210202478A1

公开(公告)日：2021-07-01

申请号：US16727336

申请日：2019-12-26

Applicant: Intel Corporation

Inventor： Biswajeet GUHA ,  William HSU ,  Michael HARPER ,  Leonard P. GULER ,  Oleg GOLONZKA ,  Dax M. CRUM ,  Chung-Hsun LIN ,  Tahir GHANI

IPC: H01L27/088 ,  H01L29/06 ,  H01L29/786 ,  H01L29/423 ,  H01L29/08

Abstract: Gate-all-around integrated circuit structures having low aspect ratio isolation structures and subfins, and method of fabricating gate-all-around integrated circuit structures having low aspect ratio isolation structures and subfins, are described. For example, an integrated circuit structure includes a first vertical arrangement of horizontal nanowires above a first subfin. A second vertical arrangement of horizontal nanowires is above a second subfin laterally adjacent the first subfin. An isolation structure is laterally between the first subfin and the second subfin, the isolation structure having a maximum height and a maximum width with a maximum height to maximum width ratio of less than 3:1.