公开(公告)号：US20220122881A1

公开(公告)日：2022-04-21

申请号：US17567762

申请日：2022-01-03

Applicant: Intel Corporation

Inventor： Sean KING ,  Hui Jae YOO ,  Sreenivas KOSARAJU ,  Timothy GLASSMAN

IPC: H01L21/768 ,  H01L23/522 ,  H01L23/532 ,  H01L21/02 ,  H01L23/00

Abstract: Conformal hermetic dielectric films suitable as dielectric diffusion barriers over 3D topography. In embodiments, the dielectric diffusion barrier includes a dielectric layer, such as a metal oxide, which can be deposited by atomic layer deposition (ALD) techniques with a conformality and density greater than can be achieved in a conventional silicon dioxide-based film deposited by a PECVD process for a thinner contiguous hermetic diffusion barrier. In further embodiments, the diffusion barrier is a multi-layered film including a high-k dielectric layer and a low-k or intermediate-k dielectric layer (e.g., a bi-layer) to reduce the dielectric constant of the diffusion barrier. In other embodiments a silicate of a high-k dielectric layer (e.g., a metal silicate) is formed to lower the k-value of the diffusion barrier by adjusting the silicon content of the silicate while maintaining high film conformality and density.

公开(公告)号：US20240282624A1

公开(公告)日：2024-08-22

申请号：US18649389

申请日：2024-04-29

Applicant: Intel Corporation

Inventor： Sean KING ,  Hui Jae YOO ,  Sreenivas KOSARAJU ,  Timothy GLASSMAN

IPC: H01L21/768 ,  H01L21/02 ,  H01L23/00 ,  H01L23/522 ,  H01L23/532

CPC classification number: H01L21/76831 ,  H01L21/02178 ,  H01L21/022 ,  H01L21/0228 ,  H01L21/76802 ,  H01L21/7682 ,  H01L21/76829 ,  H01L21/76877 ,  H01L23/522 ,  H01L23/5222 ,  H01L23/5226 ,  H01L23/53228 ,  H01L23/53295 ,  H01L23/564 ,  H01L2924/0002

Abstract: Conformal hermetic dielectric films suitable as dielectric diffusion barriers over 3D topography. In embodiments, the dielectric diffusion barrier includes a dielectric layer, such as a metal oxide, which can be deposited by atomic layer deposition (ALD) techniques with a conformality and density greater than can be achieved in a conventional silicon dioxide-based film deposited by a PECVD process for a thinner contiguous hermetic diffusion barrier. In further embodiments, the diffusion barrier is a multi-layered film including a high-k dielectric layer and a low-k or intermediate-k dielectric layer (e.g., a bi-layer) to reduce the dielectric constant of the diffusion barrier. In other embodiments a silicate of a high-k dielectric layer (e.g., a metal silicate) is formed to lower the k-value of the diffusion barrier by adjusting the silicon content of the silicate while maintaining high film conformality and density.

公开(公告)号：US20200105588A1

公开(公告)日：2020-04-02

申请号：US16702233

申请日：2019-12-03

Applicant: Intel Corporation

Inventor： Sean KING ,  Hui Jae YOO ,  Sreenivas KOSARAJU ,  Timothy GLASSMAN

IPC: H01L21/768 ,  H01L23/522 ,  H01L23/532 ,  H01L21/02 ,  H01L23/00

Abstract: Conformal hermetic dielectric films suitable as dielectric diffusion barriers over 3D topography. In embodiments, the dielectric diffusion barrier includes a dielectric layer, such as a metal oxide, which can be deposited by atomic layer deposition (ALD) techniques with a conformality and density greater than can be achieved in a conventional silicon dioxide-based film deposited by a PECVD process for a thinner contiguous hermetic diffusion barrier. In further embodiments, the diffusion barrier is a multi-layered film including a high-k dielectric layer and a low-k or intermediate-k dielectric layer (e.g., a bi-layer) to reduce the dielectric constant of the diffusion barrier. In other embodiments a silicate of a high-k dielectric layer (e.g., a metal silicate) is formed to lower the k-value of the diffusion barrier by adjusting the silicon content of the silicate while maintaining high film conformality and density.

公开(公告)号：US20170372947A1

公开(公告)日：2017-12-28

申请号：US15686047

申请日：2017-08-24

Applicant: Intel Corporation

Inventor： Sean KING ,  Hui Jae YOO ,  Sreenivas KOSARAJU ,  Timothy GLASSMAN

IPC: H01L21/768 ,  H01L21/02 ,  H01L23/532 ,  H01L23/522 ,  H01L23/00

CPC classification number: H01L21/76831 ,  H01L21/02178 ,  H01L21/022 ,  H01L21/0228 ,  H01L21/76802 ,  H01L21/7682 ,  H01L21/76829 ,  H01L21/76877 ,  H01L23/522 ,  H01L23/5222 ,  H01L23/5226 ,  H01L23/53228 ,  H01L23/53295 ,  H01L23/564 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Conformal hermetic dielectric films suitable as dielectric diffusion barriers over 3D topography. In embodiments, the dielectric diffusion barrier includes a dielectric layer, such as a metal oxide, which can be deposited by atomic layer deposition (ALD) techniques with a conformality and density greater than can be achieved in a conventional silicon dioxide-based film deposited by a PECVD process for a thinner contiguous hermetic diffusion barrier. In further embodiments, the diffusion barrier is a multi-layered film including a high-k dielectric layer and a low-k or intermediate-k dielectric layer (e.g., a bi-layer) to reduce the dielectric constant of the diffusion barrier. In other embodiments a silicate of a high-k dielectric layer (e.g., a metal silicate) is formed to lower the k-value of the diffusion barrier by adjusting the silicon content of the silicate while maintaining high film conformality and density.

公开(公告)号：US20250112037A1

公开(公告)日：2025-04-03

申请号：US18374603

申请日：2023-09-28

Applicant: Intel Corporation

Inventor： Mark KOEPER ,  Andrew MOORE ,  Sreenivas KOSARAJU ,  Nicholas J. KYBERT ,  Mengcheng LU ,  Atul MADHAVAN ,  Sudipto NASKAR ,  Wei Z. QIU ,  Tiffany R. ZINK

IPC: H01L21/02 ,  H01L23/48 ,  H01L29/10 ,  H01L29/423

Abstract: Selective dielectric growth directing contact to gate or contact to trench contact are described. In an example, an integrated circuit structure includes a plurality of gate structures above a substrate. A plurality of conductive trench contact structures is alternating with the plurality of gate structures and have an uppermost surface above an uppermost surface of gate electrodes of the plurality of gate structures. The integrated circuit structure also includes a plurality of dielectric spacers, a corresponding one of the plurality of dielectric spacers between adjacent ones of the plurality of gate structures and the plurality of conductive trench contact structures. A dielectric-on-metal (DOM) layer is on and is confined to the uppermost surface of the conductive trench contact structures. A gate contact via is on a gate electrode of one of the plurality of gate structures.

公开(公告)号：US20230260833A1

公开(公告)日：2023-08-17

申请号：US18137334

申请日：2023-04-20

Applicant: Intel Corporation

Inventor： Sean KING ,  Hui Jae YOO ,  Sreenivas KOSARAJU ,  Timothy GLASSMAN

IPC: H01L21/768 ,  H01L23/522 ,  H01L23/532 ,  H01L21/02 ,  H01L23/00

CPC classification number: H01L21/76831 ,  H01L23/5222 ,  H01L23/53295 ,  H01L21/7682 ,  H01L21/76829 ,  H01L21/02178 ,  H01L21/022 ,  H01L21/0228 ,  H01L21/76802 ,  H01L23/522 ,  H01L21/76877 ,  H01L23/5226 ,  H01L23/53228 ,  H01L23/564 ,  H01L2924/0002

Abstract: Conformal hermetic dielectric films suitable as dielectric diffusion barriers over 3D topography. In embodiments, the dielectric diffusion barrier includes a dielectric layer, such as a metal oxide, which can be deposited by atomic layer deposition (ALD) techniques with a conformality and density greater than can be achieved in a conventional silicon dioxide-based film deposited by a PECVD process for a thinner contiguous hermetic diffusion barrier. In further embodiments, the diffusion barrier is a multi-layered film including a high-k dielectric layer and a low-k or intermediate-k dielectric layer (e.g., a bi-layer) to reduce the dielectric constant of the diffusion barrier. In other embodiments a silicate of a high-k dielectric layer (e.g., a metal silicate) is formed to lower the k-value of the diffusion barrier by adjusting the silicon content of the silicate while maintaining high film conformality and density.

公开(公告)号：US20220344201A1

公开(公告)日：2022-10-27

申请号：US17855656

申请日：2022-06-30

Applicant: Intel Corporation

Inventor： Sean KING ,  Hui Jae YOO ,  Sreenivas KOSARAJU ,  Timothy GLASSMAN

IPC: H01L21/768 ,  H01L23/522 ,  H01L23/532 ,  H01L21/02 ,  H01L23/00

Abstract: Conformal hermetic dielectric films suitable as dielectric diffusion barriers over 3D topography. In embodiments, the dielectric diffusion barrier includes a dielectric layer, such as a metal oxide, which can be deposited by atomic layer deposition (ALD) techniques with a conformality and density greater than can be achieved in a conventional silicon dioxide-based film deposited by a PECVD process for a thinner contiguous hermetic diffusion barrier. In further embodiments, the diffusion barrier is a multi-layered film including a high-k dielectric layer and a low-k or intermediate-k dielectric layer (e.g., a bi-layer) to reduce the dielectric constant of the diffusion barrier. In other embodiments a silicate of a high-k dielectric layer (e.g., a metal silicate) is formed to lower the k-value of the diffusion barrier by adjusting the silicon content of the silicate while maintaining high film conformality and density.

公开(公告)号：US20190371658A1

公开(公告)日：2019-12-05

申请号：US16538666

申请日：2019-08-12

Applicant: Intel Corporation

Inventor： Sean KING ,  Hui Jae YOO ,  Sreenivas KOSARAJU ,  Timothy GLASSMAN

IPC: H01L21/768 ,  H01L23/522 ,  H01L23/532 ,  H01L21/02 ,  H01L23/00

Abstract: Conformal hermetic dielectric films suitable as dielectric diffusion barriers over 3D topography. In embodiments, the dielectric diffusion barrier includes a dielectric layer, such as a metal oxide, which can be deposited by atomic layer deposition (ALD) techniques with a conformality and density greater than can be achieved in a conventional silicon dioxide-based film deposited by a PECVD process for a thinner contiguous hermetic diffusion barrier. In further embodiments, the diffusion barrier is a multi-layered film including a high-k dielectric layer and a low-k or intermediate-k dielectric layer (e.g., a bi-layer) to reduce the dielectric constant of the diffusion barrier. In other embodiments a silicate of a high-k dielectric layer (e.g., a metal silicate) is formed to lower the k-value of the diffusion barrier by adjusting the silicon content of the silicate while maintaining high film conformality and density.

公开(公告)号：US20180218940A1

公开(公告)日：2018-08-02

申请号：US15926870

申请日：2018-03-20

Applicant: Intel Corporation

Inventor： Sean KING ,  Hui Jae YOO ,  Sreenivas KOSARAJU ,  Timothy GLASSMAN

IPC: H01L21/768 ,  H01L23/522 ,  H01L23/00 ,  H01L23/532 ,  H01L21/02

CPC classification number: H01L21/76831 ,  H01L21/02178 ,  H01L21/022 ,  H01L21/0228 ,  H01L21/76802 ,  H01L21/7682 ,  H01L21/76829 ,  H01L21/76877 ,  H01L23/522 ,  H01L23/5222 ,  H01L23/5226 ,  H01L23/53228 ,  H01L23/53295 ,  H01L23/564 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Conformal hermetic dielectric films suitable as dielectric diffusion barriers over 3D topography. In embodiments, the dielectric diffusion barrier includes a dielectric layer, such as a metal oxide, which can be deposited by atomic layer deposition (ALD) techniques with a conformality and density greater than can be achieved in a conventional silicon dioxide-based film deposited by a PECVD process for a thinner contiguous hermetic diffusion barrier. In further embodiments, the diffusion barrier is a multi-layered film including a high-k dielectric layer and a low-k or intermediate-k dielectric layer (e.g., a bi-layer) to reduce the dielectric constant of the diffusion barrier. In other embodiments a silicate of a high-k dielectric layer (e.g., a metal silicate) is formed to lower the k-value of the diffusion barrier by adjusting the silicon content of the silicate while maintaining high film conformality and density.

公开(公告)号：US20160247715A1

公开(公告)日：2016-08-25

申请号：US15141522

申请日：2016-04-28

Applicant: INTEL CORPORATION

Inventor： Sean KING ,  Hui Jae YOO ,  Sreenivas KOSARAJU ,  Timothy GLASSMAN

IPC: H01L21/768 ,  H01L23/532 ,  H01L23/00 ,  H01L23/522

CPC classification number: H01L21/76831 ,  H01L21/02178 ,  H01L21/022 ,  H01L21/0228 ,  H01L21/76802 ,  H01L21/7682 ,  H01L21/76829 ,  H01L21/76877 ,  H01L23/522 ,  H01L23/5222 ,  H01L23/5226 ,  H01L23/53228 ,  H01L23/53295 ,  H01L23/564 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Conformal hermetic dielectric films suitable as dielectric diffusion barriers over 3D topography. In embodiments, the dielectric diffusion barrier includes a dielectric layer, such as a metal oxide, which can be deposited by atomic layer deposition (ALD) techniques with a conformality and density greater than can be achieved in a conventional silicon dioxide-based film deposited by a PECVD process for a thinner contiguous hermetic diffusion barrier. In further embodiments, the diffusion barrier is a multi-layered film including a high-k dielectric layer and a low-k or intermediate-k dielectric layer (e.g., a bi-layer) to reduce the dielectric constant of the diffusion barrier. In other embodiments a silicate of a high-k dielectric layer (e.g., a metal silicate) is formed to lower the k-value of the diffusion barrier by adjusting the silicon content of the silicate while maintaining high film conformality and density.