公开(公告)号：US20240393186A1

公开(公告)日：2024-11-28

申请号：US18324578

申请日：2023-05-26

Applicant: Intel Corporation

Inventor： David E. Duarte ,  Ayan Kar ,  Sameer Jayanta Joglekar ,  You Li ,  James S. Ayers

IPC: G01K7/22 ,  H01C7/00

Abstract: Embodiments herein relate to a temperature-sensing circuit for a semiconductor device. The circuit has a remote temperature-sensing element (RTSE) including a metal thermistor formed in a metal layer on the front side or backside of a substrate. The metal thermistor may be serpentine or spiral shaped. The RTSE communicates with a separate sense circuit at another location such as on the substrate. The RTSE can further include a thin film resistor (TFR) in an adjacent dielectric layer of the stack or within the sense circuit. The RTSE is driven alternately at opposing ends to cancel out the effects of power supply variations. An output voltage which represents a sensed temperature is obtained from a point between the metal thermistor and the TFR for processing by an analog-to-digital converter.

公开(公告)号：US20220100221A1

公开(公告)日：2022-03-31

申请号：US17033571

申请日：2020-09-25

Applicant: Intel Corporation

Inventor： You Li ,  David Duarte ,  Yongping Fan

IPC: G05F3/30 ,  G05F3/26

Abstract: A low power hybrid reverse (LPHR) bandgap reference (BGR) and digital temperature sensor (DTS) or a digital thermometer, which utilizes subthreshold metal oxide semiconductor (MOS) transistor and the PNP parasitic Bi-polar Junction Transistor (BJT) device to form a reverse BGR that serves as the base for configurable BGR or DTS operating modes. The LPHR architecture uses low-cost MOS transistors and the standard parasitic PNP device. Based on a reverse bandgap voltage, the LPHR can work as a configurable BGR. By comparing the configurable BGR with the scaled base-emitter voltage, the circuit can also perform as a DTS with a linear transfer function with single-temperature trim for high accuracy.

公开(公告)号：US12061493B2

公开(公告)日：2024-08-13

申请号：US17033571

申请日：2020-09-25

Applicant: Intel Corporation

Inventor： You Li ,  David Duarte ,  Yongping Fan

IPC: G05F3/30

CPC classification number: G05F3/30

Abstract: A low power hybrid reverse (LPHR) bandgap reference (BGR) and digital temperature sensor (DTS) or a digital thermometer, which utilizes subthreshold metal oxide semiconductor (MOS) transistor and the PNP parasitic Bi-polar Junction Transistor (BJT) device to form a reverse BGR that serves as the base for configurable BGR or DTS operating modes. The LPHR architecture uses low-cost MOS transistors and the standard parasitic PNP device. Based on a reverse bandgap voltage, the LPHR can work as a configurable BGR. By comparing the configurable BGR with the scaled base-emitter voltage, the circuit can also perform as a DTS with a linear transfer function with single-temperature trim for high accuracy.