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    CAAC IGZO Deposited at Room Temperature
    1.
    发明申请
    CAAC IGZO Deposited at Room Temperature 审中-公开
    CAAC IGZO在室温下沉积

    公开(公告)号：US20150279674A1

    公开(公告)日：2015-10-01

    申请号：US14511475

    申请日：2014-10-10

    Applicant: Intermolecular, Inc.

    Inventor： Seon-Mee Cho ,  Sang Lee ,  Minh Huu Le

    IPC: H01L21/02 ,  H01L29/786 ,  H01L29/04 ,  C23C14/14

    CPC classification number: H01L21/02631 ,  C23C14/0036 ,  C23C14/086 ,  C23C14/352 ,  C23C14/562 ,  H01L21/02554 ,  H01L21/02565 ,  H01L29/045 ,  H01L29/66969 ,  H01L29/7869

    Abstract: A co-sputter technique is used to deposit In—Ga—Zn—O films using PVD. The films are deposited in an atmosphere including both oxygen and argon. A heater setpoint of about 300 C results in a substrate temperature of about 165 C. One target includes an alloy of In, Ga, Zn, and O with an atomic ratio of In:Ga:Zn of about 1:1:1. The second target includes a compound of zinc oxide. The third target includes a compound of indium oxide. The films exhibit the c-axis aligned crystalline (CAAC) phase in an as-deposited state, when deposited at room temperature, without the need of a subsequent anneal treatment.

    Abstract translation: 使用共溅射技术使用PVD沉积In-Ga-Zn-O膜。 膜在包括氧和氩的气氛中沉积。 约300℃的加热器设定值导致衬底温度为约165℃。一个靶包括In，Ga，Zn和O的合金，原子比为In：Ga：Zn为约1:1:1的原子比。 第二靶标包括氧化锌的化合物。 第三靶包括氧化铟的化合物。 当在室温下沉积时，膜以沉积状态呈现c轴对准的结晶（CAAC）相，而不需要随后的退火处理。

    Novel Method to Grow In-Situ Crystalline IGZO
    4.
    发明申请
    Novel Method to Grow In-Situ Crystalline IGZO 有权
    增加原位结晶IGZO的新方法

    公开(公告)号：US20150279670A1

    公开(公告)日：2015-10-01

    申请号：US14549158

    申请日：2014-11-20

    Applicant: Intermolecular Inc.

    Inventor： Seon-Mee Cho ,  Stuart Brinkley ,  Anh Duong ,  Majid Gharghi ,  Sang Lee ,  Minh Huu Le ,  Karl Littau ,  Jingang Su

    IPC: H01L21/02 ,  H01L29/786

    CPC classification number: H01L21/02565 ,  H01L21/02554 ,  H01L21/02631 ,  H01L29/7869

    Abstract: A co-sputter technique is used to deposit In—Ga—Zn—O films using PVD. The films are deposited in an atmosphere including both oxygen and argon. A heater setpoint of about 300 C results in a substrate temperature of about 165 C. One target includes an alloy of In, Ga, Zn, and O with an atomic ratio of In:Ga:Zn of about 1:1:1. The second target includes a compound of zinc oxide. The films exhibit the c-axis aligned crystalline (CAAC) phase in an as-deposited state, without the need of a subsequent anneal treatment.

    Abstract translation: 使用共溅射技术使用PVD沉积In-Ga-Zn-O膜。 膜在包括氧和氩的气氛中沉积。 约300℃的加热器设定值导致衬底温度为约165℃。一个靶包括In，Ga，Zn和O的合金，原子比为In：Ga：Zn为约1:1:1的原子比。 第二靶标包括氧化锌的化合物。 膜以沉积状态呈现c轴对准的结晶（CAAC）相，而不需要随后的退火处理。

    IGZO with Intra-Layer Variations and Methods for Forming the Same
    5.
    发明申请
    IGZO with Intra-Layer Variations and Methods for Forming the Same 审中-公开
    具有层间变化的IGZO及其形成方法

    公开(公告)号：US20150187574A1

    公开(公告)日：2015-07-02

    申请号：US14140797

    申请日：2013-12-26

    Applicant: LG Display Co. Ltd. ,  Intermolecular Inc.

    Inventor： Minh Huu Le ,  Yoon-Kyung Chang ,  Seon-Mee Cho ,  Min-Cheol Kim ,  Sang Lee ,  Kwon-Sik Park ,  Woosup Shin

    IPC: H01L21/02 ,  H01L29/66

    CPC classification number: H01L21/02631 ,  H01L21/02422 ,  H01L21/02472 ,  H01L21/02483 ,  H01L21/02554 ,  H01L21/02565 ,  H01L29/66969 ,  H01L29/7869 ,  H01L29/78693 ,  H01L29/78696

    Abstract: Embodiments described herein provide method for forming crystalline indium-gallium-zinc oxide (IGZO) with intra-layer variations and methods for forming such IGZO. At least a portion of a substrate is positioned in a processing chamber. A first sub-layer of an IGZO layer is formed above the at least a portion of the substrate while the at least a portion of the substrate is in the processing chamber. The first sub-layer of the IGZO layer is formed using a first set of processing conditions. A second sub-layer of the IGZO layer is formed above the first sub-layer of the IGZO layer while the at least a portion of the substrate is in the processing chamber. The second sub-layer of the IGZO layer is formed using a second set of processing conditions. The second set of processing conditions is different than the first set of processing conditions.

    Abstract translation: 本文所述的实施方案提供了具有层内变化的晶体铟镓锌氧化物（IGZO）的方法和用于形成这种IGZO的方法。 衬底的至少一部分位于处理室中。 在基板的至少一部分上方形成IGZO层的第一子层，同时基板的至少一部分位于处理室中。 使用第一组处理条件形成IGZO层的第一子层。 IGZO层的第二子层形成在IGZO层的第一子层的上方，而基板的至少一部分在处理室内。 IGZO层的第二子层使用第二组处理条件形成。 第二组处理条件与第一组处理条件不同。

    Method to grow in-situ crystalline IGZO using co-sputtering targets
    6.
    发明授权
    Method to grow in-situ crystalline IGZO using co-sputtering targets 有权
    使用共溅射靶生长原位结晶IGZO的方法

    公开(公告)号：US09337030B2

    公开(公告)日：2016-05-10

    申请号：US14549158

    申请日：2014-11-20

    Applicant: Intermolecular Inc.

    Inventor： Seon-Mee Cho ,  Stuart Brinkley ,  Anh Duong ,  Majid Gharghi ,  Sang Lee ,  Minh Huu Le ,  Karl Littau ,  Jingang Su

    IPC: H01L21/02 ,  H01L29/786

    CPC classification number: H01L21/02565 ,  H01L21/02554 ,  H01L21/02631 ,  H01L29/7869

    Abstract: A co-sputter technique is used to deposit In—Ga—Zn—O films using PVD. The films are deposited in an atmosphere including both oxygen and argon. A heater setpoint of about 300 C results in a substrate temperature of about 165 C. One target includes an alloy of In, Ga, Zn, and O with an atomic ratio of In:Ga:Zn of about 1:1:1. The second target includes a compound of zinc oxide. The films exhibit the c-axis aligned crystalline (CAAC) phase in an as-deposited state, without the need of a subsequent anneal treatment.

    Abstract translation: 使用共溅射技术使用PVD沉积In-Ga-Zn-O膜。 膜在包括氧和氩的气氛中沉积。 约300℃的加热器设定值导致衬底温度为约165℃。一个靶包括In，Ga，Zn和O的合金，原子比为In：Ga：Zn为约1:1:1的原子比。 第二靶标包括氧化锌的化合物。 膜以沉积状态呈现c轴对准的结晶（CAAC）相，而不需要随后的退火处理。

    Methods for Forming Crystalline IGZO Through Power Supply Mode Optimization
    8.
    发明申请
    Methods for Forming Crystalline IGZO Through Power Supply Mode Optimization 审中-公开
    通过电源模式优化形成晶体IGZO的方法

    公开(公告)号：US20150179444A1

    公开(公告)日：2015-06-25

    申请号：US14139195

    申请日：2013-12-23

    Applicant: LG Display Co., Ltd. ,  Intermolecular, Inc.

    Inventor： Sang Lee ,  Yoon-Kyung Chang ,  Seon-Mee Cho ,  Min-Cheol Kim ,  Kwon-Sik Park ,  Woosup Shin

    IPC: H01L21/02 ,  H01L29/786 ,  H01L29/66

    CPC classification number: H01L21/02554 ,  H01L21/02565 ,  H01L21/0262 ,  H01L21/02631 ,  H01L29/66969 ,  H01L29/7869

    Abstract: Embodiments described herein provide method for forming crystalline indium-gallium-zinc oxide (IGZO). A substrate is positioned relative to at least one target. The at least one target includes indium, gallium, zinc, or a combination thereof. A substantially constant voltage is provided across the substrate and the at least one target to cause a plasma species to impact the at least one target. The impacting of the plasma species on the at least one target causes material to be ejected from the at least one target to form an IGZO layer above the substrate.

    Abstract translation: 本文所述的实施方案提供了形成晶体铟镓锌氧化物（IGZO）的方法。 衬底相对于至少一个靶定位。 所述至少一个靶包括铟，镓，锌或其组合。 在衬底和至少一个靶上提供基本上恒定的电压，以使等离子体物质影响至少一个靶。 等离子体物质对至少一个靶材的影响使材料从至少一个靶材喷出，以在基底上方形成IGZO层。

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