MEMS DEVICE AND PROCESS FOR RF AND LOW RESISTANCE APPLICATIONS
    1.
    发明申请
    MEMS DEVICE AND PROCESS FOR RF AND LOW RESISTANCE APPLICATIONS 有权
    用于射频和低电阻应用的MEMS器件和工艺

    公开(公告)号:US20160031702A1

    公开(公告)日:2016-02-04

    申请号:US14800604

    申请日:2015-07-15

    CPC classification number: B81B3/0086 B81B2207/07 B81C3/001 B81C2201/019

    Abstract: MEMS device for low resistance applications are disclosed. In a first aspect, the MEMS device comprises a MEMS wafer including a handle wafer with one or more cavities containing a first surface and a second surface and an insulating layer deposited on the second surface of the handle wafer. The MEMS device also includes a device layer having a third and fourth surface, the third surface bonded to the insulating layer of the second surface of handle wafer; and a metal conductive layer on the fourth surface. The MEMS device also includes CMOS wafer bonded to the MEMS wafer. The CMOS wafer includes at least one metal electrode, such that an electrical connection is formed between the at least one metal electrode and at least a portion of the metal conductive layer.

    Abstract translation: 公开了用于低电阻应用的MEMS器件。 在第一方面,MEMS器件包括MEMS晶片,其包括具有包含第一表面和第二表面的一个或多个腔的手柄晶片和沉积在手柄晶片的第二表面上的绝缘层。 MEMS器件还包括具有第三和第四表面的器件层,第三表面结合到处理晶片的第二表面的绝缘层; 和在第四表面上的金属导电层。 MEMS器件还包括结合到MEMS晶片的CMOS晶片。 CMOS晶片包括至少一个金属电极,使得在至少一个金属电极和金属导电层的至少一部分之间形成电连接。

    DIFFERENTIAL SENSING ACOUSTIC SENSOR
    2.
    发明申请
    DIFFERENTIAL SENSING ACOUSTIC SENSOR 有权
    差分感应声学传感器

    公开(公告)号:US20150266723A1

    公开(公告)日:2015-09-24

    申请号:US14218561

    申请日:2014-03-18

    Abstract: A MEMS device includes a first plate coupled to a second plate and a fixed third plate formed on a first substrate. The first and second plates are displaced in the presence of an acoustic pressure differential across the surfaces of the first plate. The MEMS device also includes a first electrode formed on the third plate and a second electrode formed on the second substrate. The first, second plate, and third plates are contained in an enclosure formed by a first and second substrates. The device includes an acoustic port to expose the first plate to the environment. The MEMS device also includes a first gap formed between the second and third plates and a second gap formed between the second plate and the second electrode. The displacement of the second plate causes the first gap to change inversely to the second gap.

    Abstract translation: MEMS器件包括耦合到第二板的第一板和形成在第一衬底上的固定的第三板。 在第一板的表面上存在声压差的情况下,第一和第二板被移位。 MEMS器件还包括形成在第三板上的第一电极和形成在第二衬底上的第二电极。 第一,第二板和第三板被包含在由第一和第二基板形成的外壳中。 该装置包括用于将第一板暴露于环境的声学端口。 MEMS器件还包括形成在第二和第三板之间的第一间隙和形成在第二板和第二电极之间的第二间隙。 第二板的位移导致第一间隙与第二间隙成反比变化。

    MEMS ACOUSTIC SENSOR WITH INTEGRATED BACK CAVITY
    3.
    发明申请
    MEMS ACOUSTIC SENSOR WITH INTEGRATED BACK CAVITY 有权
    具有集成背腔的MEMS声学传感器

    公开(公告)号:US20140264656A1

    公开(公告)日:2014-09-18

    申请号:US14174639

    申请日:2014-02-06

    Abstract: A MEMS device is disclosed. The MEMS device comprises a first plate with a first surface and a second surface; and an anchor attached to a first substrate. The MEMS device further includes a second plate with a third surface and a fourth surface attached to the first plate. A linkage connects the anchor to the first plate, wherein the first plate and second plate are displaced in the presence of an acoustic pressure differential between the first and second surfaces of the first plate. The first plate, second plate, linkage, and anchor are all contained in an enclosure formed by the first substrate and a second substrate, wherein one of the first and second substrates contains a through opening to expose the first surface of the first plate to the environment.

    Abstract translation: 公开了MEMS器件。 MEMS器件包括具有第一表面和第二表面的第一板; 以及附接到第一基板的锚。 MEMS器件还包括具有附接到第一板的第三表面和第四表面的第二板。 连杆将锚固件连接到第一板,其中第一板和第二板在第一板的第一和第二表面之间存在声压差的情况下移位。 第一板,第二板,连杆和锚固件都包含在由第一基板和第二基板形成的外壳中,其中第一和第二基板中的一个包含通孔,以将第一板的第一表面暴露于 环境。

    MEMS DEVICE AND PROCESS FOR RF AND LOW RESISTANCE APPLICATIONS
    4.
    发明申请
    MEMS DEVICE AND PROCESS FOR RF AND LOW RESISTANCE APPLICATIONS 有权
    用于射频和低电阻应用的MEMS器件和工艺

    公开(公告)号:US20140145244A1

    公开(公告)日:2014-05-29

    申请号:US13687304

    申请日:2012-11-28

    CPC classification number: B81B3/0086 B81B2207/07 B81C3/001 B81C2201/019

    Abstract: MEMS device for low resistance applications are disclosed. In a first aspect, the MEMS device comprises a MEMS wafer including a handle wafer with one or more cavities containing a first surface and a second surface and an insulating layer deposited on the second surface of the handle wafer. The MEMS device also includes a device layer having a third and fourth surface, the third surface bonded to the insulating layer of the second surface of handle wafer; and a metal conductive layer on the fourth surface. The MEMS device also includes CMOS wafer bonded to the MEMS wafer. The CMOS wafer includes at least one metal electrode, such that an electrical connection is formed between the at least one metal electrode and at least a portion of the metal conductive layer.

    Abstract translation: 公开了用于低电阻应用的MEMS器件。 在第一方面,MEMS器件包括MEMS晶片,其包括具有包含第一表面和第二表面的一个或多个腔的手柄晶片和沉积在手柄晶片的第二表面上的绝缘层。 MEMS器件还包括具有第三和第四表面的器件层,第三表面结合到处理晶片的第二表面的绝缘层; 和在第四表面上的金属导电层。 MEMS器件还包括结合到MEMS晶片的CMOS晶片。 CMOS晶片包括至少一个金属电极,使得在至少一个金属电极和金属导电层的至少一部分之间形成电连接。

    MEMS DEVICE AND PROCESS FOR RF AND LOW RESISTANCE APPLICATIONS

    公开(公告)号:US20170297900A1

    公开(公告)日:2017-10-19

    申请号:US15477193

    申请日:2017-04-03

    CPC classification number: B81B3/0086 B81B2207/07 B81C3/001 B81C2201/019

    Abstract: MEMS device for low resistance applications are disclosed. In a first aspect, the MEMS device comprises a MEMS wafer including a handle wafer with one or more cavities containing a first surface and a second surface and an insulating layer deposited on the second surface of the handle wafer. The MEMS device also includes a device layer having a third and fourth surface, the third surface bonded to the insulating layer of the second surface of handle wafer; and a metal conductive layer on the fourth surface. The MEMS device also includes CMOS wafer bonded to the MEMS wafer. The CMOS wafer includes at least one metal electrode, such that an electrical connection is formed between the at least one metal electrode and at least a portion of the metal conductive layer.

    MEMS DEVICE AND PROCESS FOR RF AND LOW RESISTANCE APPLICATIONS

    公开(公告)号:US20180312394A1

    公开(公告)日:2018-11-01

    申请号:US15477202

    申请日:2017-04-03

    CPC classification number: B81B3/0086 B81B2207/07 B81C3/001 B81C2201/019

    Abstract: MEMS device for low resistance applications are disclosed. In a first aspect, the MEMS device comprises a MEMS wafer including a handle wafer with one or more cavities containing a first surface and a second surface and an insulating layer deposited on the second surface of the handle wafer. The MEMS device also includes a device layer having a third and fourth surface, the third surface bonded to the insulating layer of the second surface of handle wafer; and a metal conductive layer on the fourth surface. The MEMS device also includes CMOS wafer bonded to the MEMS wafer. The CMOS wafer includes at least one metal electrode, such that an electrical connection is formed between the at least one metal electrode and at least a portion of the metal conductive layer.

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