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公开(公告)号：US20150170605A1
公开(公告)日：2015-06-18
申请号：US14633997
申请日：2015-02-27
Applicant: JAPAN DISPLAY INC.
Inventor： Hajime WATAKABE , Arichika ISHIDA , Masato HIRAMATSU
CPC classification number: G09G5/02 , G02F1/133514 , G02F1/136209 , G02F2001/133521 , G02F2001/136222 , G02F2201/346 , G02F2202/104 , G09G3/3607
Abstract: According to one embodiment, a liquid crystal display device includes an array substrate including a first color filter configured to transmit light in a first wavelength range, a second color filter configured to transmit light in a second wavelength range of greater wavelengths than the first wavelength range, a first switching element disposed above the second color filter, a second switching element disposed above the second color filter, a first pixel electrode which is electrically connected to the first switching element and is located above the first color filter, and a second pixel electrode which is electrically connected to the second switching element and is located above the second color filter.
Abstract translation: 根据一个实施例，液晶显示装置包括阵列基板，该阵列基板包括被配置为透射第一波长范围的光的第一滤色器，配置成透射比第一波长范围更大波长的第二波长范围的光的第二滤色器 设置在第二滤色器上方的第一开关元件，设置在第二滤色器上方的第二开关元件，与第一开关元件电连接并位于第一滤色器上方的第一像素电极，以及第二像素电极 其电连接到第二开关元件并且位于第二滤色器的上方。
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公开(公告)号：US20170207255A1
公开(公告)日：2017-07-20
申请号：US15479305
申请日：2017-04-05
Applicant: Japan Display Inc.
Inventor： Masato HIRAMATSU , Yasushi KAWATA , Arichika ISHIDA
IPC: H01L27/12 , H01L29/66 , H01L29/786 , H01L29/16 , H01L29/04
CPC classification number: H01L27/1266 , H01L27/1218 , H01L27/1222 , H01L29/04 , H01L29/16 , H01L29/66757 , H01L29/78684
Abstract: According to one embodiment, a display device includes an underlying insulation layer formed on a surface of a resin layer, and a thin-film transistor formed above the surface of the resin layer via the underlying insulation layer. The underlying insulation layer includes a three-layer multilayer structure of a first silicon oxide film, a silicon nitride film formed above the first silicon oxide film, and a second silicon oxide film formed above the silicon nitride film.
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公开(公告)号：US20150108488A1
公开(公告)日：2015-04-23
申请号：US14513653
申请日：2014-10-14
Applicant: Japan Display Inc.
Inventor： Masato HIRAMATSU , Yasushi KAWATA , Arichika ISHIDA
IPC: H01L27/12
CPC classification number: H01L27/1266 , H01L27/1218 , H01L27/1222 , H01L29/04 , H01L29/16 , H01L29/66757 , H01L29/78684
Abstract: According to one embodiment, a display device includes an underlying insulation layer formed on a surface of a resin layer, and a thin-film transistor formed above the surface of the resin layer via the underlying insulation layer. The underlying insulation layer includes a three-layer multilayer structure of a first silicon oxide film, a silicon nitride film formed above the first silicon oxide film, and a second silicon oxide film formed above the silicon nitride film.
Abstract translation: 根据一个实施例，显示装置包括形成在树脂层的表面上的下层绝缘层和经由下面的绝缘层形成在树脂层的表面上方的薄膜晶体管。 底层绝缘层包括第一氧化硅膜，形成在第一氧化硅膜上方的氮化硅膜和形成在氮化硅膜上方的第二氧化硅膜的三层多层结构。
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公开(公告)号：US20170287999A1
公开(公告)日：2017-10-05
申请号：US15474336
申请日：2017-03-30
Applicant: Japan Display Inc.
Inventor： Yasukazu KIMURA , Masato HIRAMATSU , Takuma NISHINOHARA , Toshihiko ITOGA
Abstract: A display device includes a substrate having flexibility, a transistor having a gate insulating film and further having a semiconductor layer and a gate electrode that sandwich the gate insulating film, the transistor formed in an area where the substrate is bent, and a gate wiring line so formed on the substrate as to be connected to the gate electrode, and the gate electrode has an area that is present in an area where the gate electrode overlaps with the semiconductor layer and is thinner than at least part of the gate wiring line.
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公开(公告)号：US20140346497A1
公开(公告)日：2014-11-27
申请号：US14256267
申请日：2014-04-18
Applicant: Japan Display Inc.
Inventor： Masato HIRAMATSU , Masayoshi Fuchi , Arichika Ishida
IPC: H01L29/786 , H01L29/66
CPC classification number: H01L29/7869 , H01L21/02164 , H01L21/02211 , H01L21/02214 , H01L21/02271 , H01L21/02565 , H01L21/0262 , H01L21/443 , H01L21/465 , H01L29/24 , H01L29/4908 , H01L29/66969 , H01L29/78696
Abstract: According to one embodiment, a thin-film transistor comprises an oxide semiconductor layer formed on a part of a substrate, a first gate insulator film of a silicon dioxide film formed on the oxide semiconductor layer and by the CVD method with a silane-based source gas, a second gate insulator film of a silicon dioxide film formed on the first gate insulator film by the CVD method with a TEOS source gas, and a gate electrode formed on the second gate insulator film.
Abstract translation: 根据一个实施例，薄膜晶体管包括形成在衬底的一部分上的氧化物半导体层，形成在氧化物半导体层上的二氧化硅膜的第一栅极绝缘膜和通过CVD法的硅烷基源 气体，通过CVD法用TEOS源气体形成在第一栅极绝缘膜上的二氧化硅膜的第二栅极绝缘膜，以及形成在第二栅极绝缘膜上的栅电极。
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Patent Agency Ranking
6.发明申请公开(公告)号：US20190334122A1
公开(公告)日：2019-10-31
申请号：US16505823
申请日：2019-07-09
Applicant: Japan Display Inc.
Inventor： Masato HIRAMATSU
IPC: H01L51/52 , H01L51/00 , H01L51/56 , H01L27/32 , G09G3/3208
Abstract: According to one embodiment, a display device includes a first base, a second base, a middle layer including a metal layer located between the first base and the second base, and a circuit unit and a display element unit located above the second base.
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公开(公告)号：US20190206975A1
公开(公告)日：2019-07-04
申请号：US16226764
申请日：2018-12-20
Applicant: Japan Display Inc.
Inventor： Masato HIRAMATSU
Abstract: A display device including a substrate, a display region, a periphery region outside of the display region, a terminal part arranged with a plurality of terminal electrodes in the periphery region, a wiring arranged between the display region and the terminal part, a plurality of inorganic insulation layers, and an organic insulation film arranged between the display region and the terminal part. At least one of the plurality of inorganic insulation layer extends between the display region and the terminal part and includes an opening part between the display region and the terminal part, the organic insulation film is arranged overlapping the opening part, the organic insulation film has a larger film thickness at a center part than an end part of the opening part, and the wiring is arranged along an upper surface of the organic insulation film.
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公开(公告)号：US20160172503A1
公开(公告)日：2016-06-16
申请号：US15051786
申请日：2016-02-24
Applicant: Japan Display Inc.
Inventor： Masato HIRAMATSU , Masayoshi FUCHI , Arichika ISHIDA
IPC: H01L29/786 , H01L21/443 , H01L29/66 , H01L29/24
CPC classification number: H01L29/7869 , H01L21/02164 , H01L21/02211 , H01L21/02214 , H01L21/02271 , H01L21/02565 , H01L21/0262 , H01L21/443 , H01L21/465 , H01L29/24 , H01L29/4908 , H01L29/66969 , H01L29/78696
Abstract: According to one embodiment, a thin-film transistor comprises an oxide semiconductor layer formed on a part of a substrate, a first gate insulator film of a silicon dioxide film formed on the oxide semiconductor layer and by the CVD method with a silane-based source gas, a second gate insulator film of a silicon dioxide film formed on the first gate insulator film by the CVD method with a TEOS source gas, and a gate electrode formed on the second gate insulator film.
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公开(公告)号：US20220077266A1
公开(公告)日：2022-03-10
申请号：US17530848
申请日：2021-11-19
Applicant: Japan Display Inc.
Inventor： Yasukazu KIMURA , Masato HIRAMATSU , Takuma NISHINOHARA , Toshihiko ITOGA
Abstract: A display device includes a substrate having flexibility, a transistor having agate insulating film and further having a semiconductor layer and a gate electrode that sandwich the gate insulating film, the transistor formed in an area where the substrate is bent, and a gate wiring line so formed on the substrate as to be connected to the gate electrode, and the gate electrode has an area that is present in an area where the gate electrode overlaps with the semiconductor layer and is thinner than at least part of the gate wiring line.
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公开(公告)号：US20150263142A1
公开(公告)日：2015-09-17
申请号：US14729117
申请日：2015-06-03
Applicant: Japan Display Inc.
Inventor： Masato HIRAMATSU , Masayoshi FUCHI , Arichika ISHIDA
IPC: H01L29/66 , H01L21/02 , H01L21/465 , H01L29/786
CPC classification number: H01L29/7869 , H01L21/02164 , H01L21/02211 , H01L21/02214 , H01L21/02271 , H01L21/02565 , H01L21/0262 , H01L21/443 , H01L21/465 , H01L29/24 , H01L29/4908 , H01L29/66969 , H01L29/78696
Abstract: According to one embodiment, a thin-film transistor comprises an oxide semiconductor layer formed on a part of a substrate, a first gate insulator film of a silicon dioxide film formed on the oxide semiconductor layer and by the CVD method with a silane-based source gas, a second gate insulator film of a silicon dioxide film formed on the first gate insulator film by the CVD method with a TEOS source gas, and a gate electrode formed on the second gate insulator film.
Abstract translation: 根据一个实施例，薄膜晶体管包括形成在衬底的一部分上的氧化物半导体层，形成在氧化物半导体层上的二氧化硅膜的第一栅极绝缘膜和通过CVD法的硅烷基源 气体，通过CVD法用TEOS源气体形成在第一栅极绝缘膜上的二氧化硅膜的第二栅极绝缘膜，以及形成在第二栅极绝缘膜上的栅电极。
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