利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

12 条记录 (耗时 0.027 秒)

    Power component bearing interconnections
    2.
    发明授权
    Power component bearing interconnections 有权
    电力部件轴承互连

    公开(公告)号：US06831338B1

    公开(公告)日：2004-12-14

    申请号：US09420478

    申请日：1999-10-19

    申请人： Mathieu Roy

    发明人： Mathieu Roy

    IPC分类号： H01L31119

    CPC分类号： H01L29/402 ,  H01L29/0615 ,  H01L29/74

    摘要： A power component formed in an N-type silicon substrate delimited by a P-type wall, having a lower surface including a first P-type region connected to the wall, and an upper surface including a second P-type region, a conductive layer extending above the substrate between the second region and the wall. The component includes a third N-type region of high doping level formed in the substrate under the portion of the layer substantially halfway between the external periphery of the second region and the internal periphery of the wall. This third region is contacted by a field plate extending on either side of the third region in the direction of the wall and of the third region.

    摘要翻译： 形成在由P型壁限定的N型硅衬底中的功率部件，具有包括连接到所述壁的第一P型区域的下表面和包括第二P型区域的上表面，导电层 在第二区域和壁之间延伸到衬底之上。 该部件包括在该基底的基本上在该第二区域的外周和该内壁周边的基本中间部分之下形成的高掺杂度的第三N型区域。 该第三区域由在第三区域的任一侧在壁和第三区域的方向上延伸的场板接触。

    Vertical component peripheral structure
    3.
    发明授权
    Vertical component peripheral structure 有权
    垂直元件周边结构

    公开(公告)号：US06611006B2

    公开(公告)日：2003-08-26

    申请号：US09855994

    申请日：2001-05-15

    申请人： Mathieu Roy

    发明人： Mathieu Roy

    IPC分类号： H01L310232

    CPC分类号： H01L29/0649 ,  H01L23/3178 ,  H01L29/0615 ,  H01L29/0638 ,  H01L29/0834 ,  H01L29/102 ,  H01L29/41716 ,  H01L29/74 ,  H01L2924/0002 ,  H01L2924/00

    摘要： A power component formed in an N-type silicon substrate, the lower and upper surfaces of which respectively include a first and a second P-type region that do not extend to the component periphery, a high voltage being capable of existing between the first and second regions and having to be withstood by the junctions between the first and second regions and the substrate. A deep insulating region that does not join the first region is provided at the lower periphery of the component, the lower surface of the substrate between said deep insulating region and the first region being coated with an insulating layer, the height of the deep insulating region being greater than that of a possible soldering upward extension formed during the soldering of the lower surface on a heat sink.

    摘要翻译： 形成在N型硅衬底中的功率部件，其下表面和上表面分别包括不延伸到部件周边的第一和第二P型区域，能够存在于第一和第二部分之间的高电压 第二区域并且必须被第一和第二区域与基板之间的接合处理。 在该部件的下周侧设置有不结合第一区域的深绝缘区域，在该深绝缘区域与第一区域之间的基板的下表面被覆有绝缘层，深绝缘区域的高度 大于在下表面在散热器上的焊接期间形成的可能的焊接向上延伸。

    Power component bearing interconnections
    6.
    发明授权
    Power component bearing interconnections 有权
    电力部件轴承互连

    公开(公告)号：US06583487B1

    公开(公告)日：2003-06-24

    申请号：US09421130

    申请日：1999-10-19

    申请人： Mathieu Roy

    发明人： Mathieu Roy

    IPC分类号： H01L2358

    CPC分类号： H01L29/74 ,  H01L21/761 ,  H01L21/76224 ,  H01L29/0615 ,  H01L29/0649 ,  H01L29/7322

    摘要： A power component formed in an N-type silicon substrate delimited by a P-type wall, having a lower surface including a first P-type region connected to the wall, and an upper surface including a second P-type region, a conductive track extending above the substrate between the second region and the wall. The component includes a succession of trenches extending in the substrate under the track and perpendicularly to this track, each trench being filled with an insulator.

    摘要翻译： 形成在由P型壁限定的N型硅衬底中的功率部件，具有包括连接到所述壁的第一P型区域的下表面和包括第二P型区域的上表面，导电轨道 在第二区域和壁之间延伸到衬底之上。 该部件包括在轨道下方的衬底中延伸并垂直于该轨道的一系列沟槽，每个沟槽被绝缘体填充。

    Vertical power component manufacturing method
    8.
    发明授权
    Vertical power component manufacturing method 有权
    垂直功率元件制造方法

    公开(公告)号：US06784465B2

    公开(公告)日：2004-08-31

    申请号：US10423359

    申请日：2003-04-25

    申请人： Mathieu Roy

    发明人： Mathieu Roy

    IPC分类号： H01L2974

    CPC分类号： H01L29/66295 ,  H01L21/2257 ,  H01L21/761 ,  H01L29/0619 ,  H01L29/0634 ,  H01L29/0834 ,  H01L29/1016 ,  H01L29/1095 ,  H01L29/66333 ,  H01L29/66393

    摘要： A method for manufacturing a vertical power component on a substrate formed of a lightly-doped silicon wafer, including the steps of boring on the lower surface side of the substrate a succession of holes perpendicular to this surface; diffusing a dopant from the holes, of a second conductivity type opposite to that of the substrate; and boring similar holes on the upper surface side of the substrate to define an isolating wall and diffuse from these holes a dopant of the second conductivity type with a high doping level, the holes corresponding to the isolating wall being sufficiently close for the diffused areas to join laterally and vertically.

    摘要翻译： 一种在由轻掺杂硅晶片形成的基板上制造垂直功率分量的方法，包括以下步骤：在所述基板的下表面侧镗孔垂直于该表面的一连串孔; 扩散与孔相反的第二导电类型的掺杂剂; 并且在衬底的上表面侧上钻出类似的孔，以限定隔离壁并且从这些孔扩散具有高掺杂水平的第二导电类型的掺杂剂，对应于隔离壁的孔对于扩散区域是足够接近的 横向和垂直连接。

    Vertical power component manufacturing method
    9.
    发明授权
    Vertical power component manufacturing method 有权

    公开(公告)号：US06579782B2

    公开(公告)日：2003-06-17

    申请号：US09747757

    申请日：2000-12-22

    申请人： Mathieu Roy

    发明人： Mathieu Roy

    IPC分类号： H01L2122

    CPC分类号： H01L29/66295 ,  H01L21/2257 ,  H01L21/761 ,  H01L29/0619 ,  H01L29/0634 ,  H01L29/0834 ,  H01L29/1016 ,  H01L29/1095 ,  H01L29/66333 ,  H01L29/66393

    摘要： A method for manufacturing a vertical power component on a substrate formed of a lightly-doped silicon wafer, including the steps of boring on the lower surface side of the substrate a succession of holes perpendicular to this surface; diffusing a dopant from the holes, of a second conductivity type opposite to that of the substrate; and boring similar holes on the upper surface side of the substrate to define an isolating wall and diffuse from these holes a dopant of the second conductivity type with a high doping level, the holes corresponding to the isolating wall being sufficiently close for the diffused areas to join laterally and vertically.