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    Thin Film Transistor (TFT) and Method for Fabricating the Same
    2.
    发明申请
    Thin Film Transistor (TFT) and Method for Fabricating the Same 审中-公开
    薄膜晶体管（TFT）及其制造方法

    公开(公告)号：US20070243670A1

    公开(公告)日：2007-10-18

    申请号：US11279933

    申请日：2006-04-17

    Applicant: Chi-Lin Chen ,  Po-Hao Tsai ,  Hung-Tse Chen ,  Yu-Cheng Chen ,  Jia-Xing Lin

    Inventor： Chi-Lin Chen ,  Po-Hao Tsai ,  Hung-Tse Chen ,  Yu-Cheng Chen ,  Jia-Xing Lin

    IPC: H01L21/84 ,  H01L21/20

    CPC classification number: H01L29/78675 ,  H01L21/02532 ,  H01L21/02667 ,  H01L21/2026 ,  H01L27/1281 ,  H01L29/04 ,  H01L29/42384 ,  H01L29/66757 ,  H01L29/78618 ,  H01L29/78621 ,  H01L29/78645 ,  H01L29/78696

    Abstract: A method for fabricating a thin film transistor (“TFT”) device includes providing a substrate, forming a patterned amorphous silicon layer over the substrate including a pair of first regions, a second region disposed between the pair of first regions, and at least one third region, each of which being disposed between and contiguous with the second region and each of the pair of first regions, the second region including a sub-region contiguous with each of the at least one third region, forming a heat retaining layer over the substrate, irradiating the patterned amorphous silicon layer with a laser through the heat retaining layer to form a patterned crystallized silicon layer corresponding to the patterned amorphous silicon layer including a grain boundary extending substantially across a crystallized sub-region corresponding to the sub-region, and forming a patterned conductive layer over a portion of a crystallized second region of the patterned crystallized silicon layer corresponding to the second region of the patterned amorphous silicon layer.

    Abstract translation: 一种制造薄膜晶体管（“TFT”）器件的方法包括提供衬底，在衬底上形成图案化的非晶硅层，该衬底包括一对第一区域，设置在该对第一区域之间的第二区域和至少一个 第三区域，每个区域设置在第二区域之间并与第二区域和第一区域中的每一个相邻并且与第一区域中的每一个邻接，第二区域包括与至少一个第三区域中的每一个邻接的子区域， 衬底，通过所述保温层用激光照射所述图案化非晶硅层，以形成对应于所述图案化非晶硅层的图案化结晶硅层，所述图案化非晶硅层包括基本上跨越对应于所述子区域的结晶子区域延伸的晶界，以及 在图案化的结晶硅层对角结晶的第二区域的一部分上形成图案化的导电层 结合到图案化非晶硅层的第二区域。

    Method of forming poly-silicon crystallization
    4.
    发明授权
    Method of forming poly-silicon crystallization 有权
    形成多晶硅结晶的方法

    公开(公告)号：US06982195B2

    公开(公告)日：2006-01-03

    申请号：US10780589

    申请日：2004-02-19

    Applicant: Jia-Xing Lin ,  Chi-Lin Chen ,  Yu-Cheng Chen

    Inventor： Jia-Xing Lin ,  Chi-Lin Chen ,  Yu-Cheng Chen

    IPC: H01L21/84

    CPC classification number: H01L21/02686 ,  H01L21/02532 ,  H01L21/02595 ,  H01L21/2026 ,  H01L21/268 ,  H01L27/1296 ,  H01L29/66757 ,  H01L29/78675

    Abstract: An amorphous silicon layer is formed on a substrate, and then a protective layer and a reflective layer are formed in turn to form a film stack on portions of the amorphous silicon layer. The reflective layer is a metal material with reflectivity of laser, and the protective layer is able to prevent metal diffusion. When an excimer laser heats the amorphous silicon layer to crystallize the amorphous silicon, nucleation sites are formed in the amorphous silicon layer under the film stack of the protective layer and the reflective layer. Next, laterally expanding crystallization occurs in the amorphous silicon layer to form poly-silicon having crystal grains with size of micrometers and high grain order.

    Abstract translation: 在基板上形成非晶硅层，然后依次形成保护层和反射层，以在非晶硅层的部分上形成膜堆叠。 反射层是具有激光反射率的金属材料，保护层能够防止金属扩散。 当准分子激光器加热非晶硅层以使非晶硅结晶时，在保护层和反射层的膜堆叠下面的非晶硅层中形成成核位置。 接下来，在非晶硅层中发生横向膨胀结晶，形成晶粒大小为微米，晶粒度高的多晶硅。

    Method of fabricating a polycrystalline silicon thin film transistor
    7.
    发明申请
    Method of fabricating a polycrystalline silicon thin film transistor 审中-公开
    制造多晶硅薄膜晶体管的方法

    公开(公告)号：US20060172469A1

    公开(公告)日：2006-08-03

    申请号：US11312473

    申请日：2005-12-21

    Applicant: Jia-Xing Lin ,  Yu-Cheng Chen ,  Chi-Lin Chen

    Inventor： Jia-Xing Lin ,  Yu-Cheng Chen ,  Chi-Lin Chen

    IPC: H01L21/84 ,  H01L21/20

    CPC classification number: H01L21/02686 ,  H01L21/02532 ,  H01L21/2026 ,  H01L27/1296 ,  H01L29/66757 ,  H01L29/78675

    Abstract: An amorphous silicon (a-Si) layer is first formed on a substrate, and the a-Si layer is next patterned to form silicon islands for defining device active regions. Then, a single shot laser beam with long pulse is utilized to irradiate each silicon island, and lateral growth crystallization is induced in each silicon island for transforming a-Si into polycrystalline silicon (poly-Si). Finally, the general subsequent processes for thin film transistor (TFT) fabrication are performed in turn to fabricate poly-Si TFTs.

    Abstract translation: 首先在衬底上形成非晶硅（a-Si）层，然后将a-Si层图案化以形成用于限定器件有源区的硅岛。 然后，利用具有长脉冲的单次激光束照射每个硅岛，并且在每个硅岛中诱导横向生长结晶以将a-Si转化为多晶硅（poly-Si）。 最后，依次进行薄膜晶体管（TFT）制造的一般后续处理以制造多晶硅TFT。

    Method of enhancing laser crystallization for polycrystalline silicon fabrication
    8.
    发明申请
    Method of enhancing laser crystallization for polycrystalline silicon fabrication 审中-公开
    增强多晶硅制造激光结晶的方法

    公开(公告)号：US20060088986A1

    公开(公告)日：2006-04-27

    申请号：US11222804

    申请日：2005-09-12

    Applicant: Jia-Xing Lin ,  Chi-Lin Chen ,  Yu-Cheng Chen ,  Po-Hao Tsai

    Inventor： Jia-Xing Lin ,  Chi-Lin Chen ,  Yu-Cheng Chen ,  Po-Hao Tsai

    IPC: H01L21/20

    CPC classification number: H01L21/02686 ,  H01L21/02532 ,  H01L21/02595 ,  H01L21/2026 ,  H01L27/1281 ,  H01L29/66757

    Abstract: An amorphous silicon layer and at least a heat-retaining layer are formed on a substrate in turn. Wherein, the heat-retaining layer is controlled to have an anti-reflective thickness for reducing the threshold laser energy to effect the melting of the amorphous silicon layer. Then, a laser irradiation process is performed to transform the amorphous silicon layer into a polycrystalline silicon layer. During the laser irratiation process, a portion of the laser energy transmits the heat-retaining layer to effect the melting of the amorphous silicon layer, and another portion of the laser energy is absorbed by the heat-retaining layer.

    Abstract translation: 依次在基板上形成非晶硅层和至少一个保温层。 其中，保温层被控制为具有用于降低阈值激光能量以实现非晶硅层熔化的抗反射厚度。 然后，执行激光照射处理以将非晶硅层转变成多晶硅层。 在激光照射过程中，激光能量的一部分透过保温层来实现非晶硅层的熔化，另一部分激光能被保温层吸收。

    Method for planarizing polysilicon
    9.
    发明申请
    Method for planarizing polysilicon 审中-公开
    平面化多晶硅的方法

    公开(公告)号：US20060043072A1

    公开(公告)日：2006-03-02

    申请号：US11194314

    申请日：2005-08-01

    Applicant: Yu-Cheng Chen ,  Jia-Xing Lin ,  Chi-Lin Chen

    Inventor： Yu-Cheng Chen ,  Jia-Xing Lin ,  Chi-Lin Chen

    IPC: C03C15/00

    CPC classification number: H01L21/02675 ,  C03C15/00 ,  C03C15/02 ,  C03C23/0025 ,  H01L21/02532 ,  H01L21/02595 ,  H01L21/2026 ,  H01L21/32115 ,  H01L29/6675 ,  H01L29/78606

    Abstract: A method for planarizing polysilicon comprises providing a substrate, forming a dielectric layer on the substrate, forming an amorphous silicon film on the dielectric layer, etching the amorphous silicon film to remove native oxide formed on a surface of the amorphous silicon film, exposing the surface of the amorphous silicon film to a first radiation source to polycrystallize the amorphous silicon film into a polysilicon film, etching the polysilicon film to remove weak bonded silicon formed on a surface of the polysilicon film, and exposing the surface of the polysilicon film to a second radiation source to reflow the polysilicon film.

    Abstract translation: 一种用于平坦化多晶硅的方法包括：提供衬底，在衬底上形成电介质层，在电介质层上形成非晶硅膜，蚀刻非晶硅膜以去除在非晶硅膜的表面上形成的自然氧化物， 将所述非晶硅膜施加到第一辐射源以将所述非晶硅膜多晶化为多晶硅膜，蚀刻所述多晶硅膜以去除在所述多晶硅膜的表面上形成的弱键合硅，并将所述多晶硅膜的表面暴露于第二 辐射源来回流多晶硅膜。

    Method of forming poly-silicon crystallization
    10.
    发明申请
    Method of forming poly-silicon crystallization 有权
    形成多晶硅结晶的方法

    公开(公告)号：US20050136612A1

    公开(公告)日：2005-06-23

    申请号：US10780589

    申请日：2004-02-19

    Applicant: Jia-Xing Lin ,  Chi-Lin Chen ,  Yu-Cheng Chen

    Inventor： Jia-Xing Lin ,  Chi-Lin Chen ,  Yu-Cheng Chen

    IPC: H01L21/20 ,  H01L21/268 ,  H01L21/336 ,  H01L29/786 ,  H01L21/76

    CPC classification number: H01L21/02686 ,  H01L21/02532 ,  H01L21/02595 ,  H01L21/2026 ,  H01L21/268 ,  H01L27/1296 ,  H01L29/66757 ,  H01L29/78675

    Abstract: An amorphous silicon layer is formed on a substrate, and then a protective layer and a reflective layer are formed in turn to form a film stack on portions of the amorphous silicon layer. The reflective layer is a metal material with reflectivity of laser, and the protective layer is able to prevent metal diffusion. When an excimer laser heats the amorphous silicon layer to crystallize the amorphous silicon, nucleation sites are formed in the amorphous silicon layer under the film stack of the protective layer and the reflective layer. Next, laterally expanding crystallization occurs in the amorphous silicon layer to form poly-silicon having crystal grains with size of micrometers and high grain order.

    Abstract translation: 在基板上形成非晶硅层，然后依次形成保护层和反射层，以在非晶硅层的部分上形成膜堆叠。 反射层是具有激光反射率的金属材料，保护层能够防止金属扩散。 当准分子激光器加热非晶硅层以使非晶硅结晶时，在保护层和反射层的膜堆叠下面的非晶硅层中形成成核位置。 接下来，在非晶硅层中发生横向膨胀结晶，形成晶粒大小为微米，晶粒度高的多晶硅。

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