公开(公告)号：US20090297706A1

公开(公告)日：2009-12-03

申请号：US11908437

申请日：2006-03-10

申请人： Jiro Senda ,  Motohiro Oshima ,  Kozo Ishida ,  Koji Tominaga

发明人： Jiro Senda ,  Motohiro Oshima ,  Kozo Ishida ,  Koji Tominaga

IPC分类号： C23C16/44

CPC分类号： H01L21/31637 ,  C23C16/4485 ,  C23C16/45557 ,  H01L21/02175 ,  H01L21/02183 ,  H01L21/02271 ,  H01L21/31604

摘要： An obstruct of this invention is to make it possible to form a metal-oxide film or a metal-nitride film having less oxygen deficit at a high deposition rate with improved repeatability and to downsize a film forming system as well.The film forming system in accordance with this invention comprises a chamber 3 inside of which a substrate 2 is held and an injection valve 4 that directly injects the liquid precursor into the chamber 3, wherein the liquid precursor is a mixed solution composed of a metallic compound and a low boiling point organic compound, and a pressure in the chamber 3 is made to be both larger than a vapor pressure of the metallic compound prior to being mixed with the low boiling point organic compound and smaller than a vapor pressure of the mixed solution.

摘要翻译： 本发明的阻碍是使得可以以高沉积速率形成具有较低氧缺陷的金属氧化物膜或金属氮化物膜，同时具有改进的重复性和小型化成膜体系。 根据本发明的成膜系统包括在其内部保持有基底2的腔室3和将液体前体直接喷射到腔室3中的喷射阀4，其中液体前体是由金属化合物 和低沸点有机化合物，并且使室3内的压力都大于在与低沸点有机化合物混合之前的金属化合物的蒸气压，并且小于混合溶液的蒸汽压 。

公开(公告)号：US20090092741A1

公开(公告)日：2009-04-09

申请号：US11908650

申请日：2006-03-13

申请人： Kozo Ishida ,  Koji Tominaga ,  Koichiro Matsuda ,  Tetsuo Shimizu ,  Jiro Senda ,  Motohiro Oshima ,  Akiko Komeda

发明人： Kozo Ishida ,  Koji Tominaga ,  Koichiro Matsuda ,  Tetsuo Shimizu ,  Jiro Senda ,  Motohiro Oshima ,  Akiko Komeda

IPC分类号： B05D1/02 ,  B05C5/00

CPC分类号： H01L21/31608 ,  C23C14/3428 ,  C23C16/402 ,  C23C16/4485 ,  C23C16/45523 ,  H01L21/02164 ,  H01L21/02183 ,  H01L21/02214 ,  H01L21/02271 ,  H01L21/31637

摘要： The present claimed invention is a film forming system 1 that forms a film by vaporizing a liquid precursor and then depositing the vaporized liquid precursor on a substrate 2, and comprises a chamber 3 inside of which the substrate 2 is held, an injection valve 4 that directly injects the liquid precursor into the chamber 3, and a control unit 11 that alternately sets a supplying period while the liquid precursor is directly injected into the chamber 3 to supply the liquid precursor in a vaporized state and a supply halt period while the liquid precursor is not supplied into the chamber 3 and controls the supplying period and the supply halt period by periodically opening and closing the injection valve 4 so as to intermittently supply the liquid precursor into the chamber 3, and is characterized by that the control unit 11 controls the supply halt period to be equal to or longer than a migration/evaporation period necessary for atoms or molecules of the liquid precursor deposited on the substrate 2 to migrate and necessary for a reaction by-product material generated on the substrate 2 to evaporate. An object of this invention is to generate a thin film of high grade having less impure substances.

摘要翻译： 本发明是一种成膜系统1，其通过蒸发液体前体形成膜，然后将蒸发的液体前体沉积在基板2上，并且包括在其内部保持有基板2的腔室3，喷射阀4 直接将液体前体注入到室3中，以及控制单元11，其将液体前体直接注入到室3中交替地设置供给周期，以将液体前体供给到蒸发状态和供给停止期间，同时液体前体 不供给到室3中，并且通过周期性地打开和关闭喷射阀4来控制供给周期和供给停止时间，以间歇地将液体前体供给到室3中，并且其特征在于控制单元11控制 供应停止时间等于或长于沉积在其上的液体前体原子或分子所需的迁移/蒸发时间 衬底2迁移并且在衬底2上产生的反应副产物材料所必需的蒸发。 本发明的目的是产生具有较少不纯物质的高级薄膜。

公开(公告)号：US20080095936A1

公开(公告)日：2008-04-24

申请号：US11771908

申请日：2007-06-29

申请人： Jiro Senda ,  Motohiro Oshima ,  Tetsuo Shimizu ,  Koji Tominaga ,  Koichiro Matsuda ,  Yutaka Yamagishi

发明人： Jiro Senda ,  Motohiro Oshima ,  Tetsuo Shimizu ,  Koji Tominaga ,  Koichiro Matsuda ,  Yutaka Yamagishi

IPC分类号： C23C16/455 ,  C23C16/52

CPC分类号： C23C16/4486 ,  C23C16/45523

摘要： An obstruct of this invention is to downsize a chamber, consequently a film forming system, to improve a film thickness distribution and to improve throughput of film forming by increasing the amount of the vaporized liquid precursor. The film forming system 1 is to form a film by vaporizing a liquid precursor and then depositing the vaporized liquid precursor on a substrate W, and comprises a chamber 2 inside of which the substrate W is held and multiple injection valves 3 that are arranged at different positions in the chamber 2 and that directly inject the identical liquid precursor in the chamber 2, vaporize the identical liquid precursor by flash boiling and then supply the vaporized liquid precursor.

摘要翻译： 本发明的阻碍是通过增加蒸发的液体前体的量来减小室的尺寸，从而缩小成膜系统以改善膜厚度分布并提高成膜的生产量。 成膜系统1是通过蒸发液体前体而形成膜，然后将蒸发的液体前体沉积在基板W上，并且包括在其内保持基板W的腔室2和布置在不同的多个喷射阀3 在腔室2中的位置，并且将相同的液体前体直接注入到腔室2中，通过闪蒸来蒸发相同的液体前体，然后供应蒸发的液体前体。