公开(公告)号：US20120199471A1

公开(公告)日：2012-08-09

申请号：US13359802

申请日：2012-01-27

申请人： Seiken Matsumoto ,  Seiji Kuwabara

发明人： Seiken Matsumoto ,  Seiji Kuwabara

IPC分类号： C23C14/34

CPC分类号： C23C14/3407 ,  C23C14/3428 ,  C23C14/3464 ,  C23C14/352 ,  H01J37/3417 ,  H01J37/3429 ,  H01J37/3447

摘要： Provided are a film-forming apparatus and a film-forming method capable of preventing complication of an apparatus mechanism in formation of a thin film of multiple materials by sputtering to simplify the apparatus mechanism and preventing an increase in an apparatus cost. The film-forming apparatus includes a vacuum chamber, a substrate holder for holding a substrate, cathode mechanisms for supporting targets respectively so that the targets can be opposed to the substrate in the vacuum chamber, and shutters movable forward and backward individually between the targets made of different materials and the substrate to block or pass film-forming particles generated from the targets. At least one of the shutters is formed of a target material different from those for the targets so that the at least one of the shutters is configured as a shutter that also functions as a target.

摘要翻译： 提供一种成膜装置和成膜方法，能够通过溅射来防止形成多种材料的薄膜的装置机构的复杂化，从而简化装置机构并防止装置成本的增加。 成膜装置包括真空室，用于保持基板的基板保持器，用于分别支撑目标的阴极机构，使得靶可以与真空室中的基板相对，以及在所制成的目标之间单独地向前和向后移动的百叶窗 的不同材料和基材以阻挡或通过由靶产生的成膜颗粒。 百叶窗中的至少一个由与目标材料不同的目标材料形成，使得至少一个快门被配置为也用作目标的快门。

公开(公告)号：US20090092741A1

公开(公告)日：2009-04-09

申请号：US11908650

申请日：2006-03-13

申请人： Kozo Ishida ,  Koji Tominaga ,  Koichiro Matsuda ,  Tetsuo Shimizu ,  Jiro Senda ,  Motohiro Oshima ,  Akiko Komeda

发明人： Kozo Ishida ,  Koji Tominaga ,  Koichiro Matsuda ,  Tetsuo Shimizu ,  Jiro Senda ,  Motohiro Oshima ,  Akiko Komeda

IPC分类号： B05D1/02 ,  B05C5/00

CPC分类号： H01L21/31608 ,  C23C14/3428 ,  C23C16/402 ,  C23C16/4485 ,  C23C16/45523 ,  H01L21/02164 ,  H01L21/02183 ,  H01L21/02214 ,  H01L21/02271 ,  H01L21/31637

摘要： The present claimed invention is a film forming system 1 that forms a film by vaporizing a liquid precursor and then depositing the vaporized liquid precursor on a substrate 2, and comprises a chamber 3 inside of which the substrate 2 is held, an injection valve 4 that directly injects the liquid precursor into the chamber 3, and a control unit 11 that alternately sets a supplying period while the liquid precursor is directly injected into the chamber 3 to supply the liquid precursor in a vaporized state and a supply halt period while the liquid precursor is not supplied into the chamber 3 and controls the supplying period and the supply halt period by periodically opening and closing the injection valve 4 so as to intermittently supply the liquid precursor into the chamber 3, and is characterized by that the control unit 11 controls the supply halt period to be equal to or longer than a migration/evaporation period necessary for atoms or molecules of the liquid precursor deposited on the substrate 2 to migrate and necessary for a reaction by-product material generated on the substrate 2 to evaporate. An object of this invention is to generate a thin film of high grade having less impure substances.

摘要翻译： 本发明是一种成膜系统1，其通过蒸发液体前体形成膜，然后将蒸发的液体前体沉积在基板2上，并且包括在其内部保持有基板2的腔室3，喷射阀4 直接将液体前体注入到室3中，以及控制单元11，其将液体前体直接注入到室3中交替地设置供给周期，以将液体前体供给到蒸发状态和供给停止期间，同时液体前体 不供给到室3中，并且通过周期性地打开和关闭喷射阀4来控制供给周期和供给停止时间，以间歇地将液体前体供给到室3中，并且其特征在于控制单元11控制 供应停止时间等于或长于沉积在其上的液体前体原子或分子所需的迁移/蒸发时间 衬底2迁移并且在衬底2上产生的反应副产物材料所必需的蒸发。 本发明的目的是产生具有较少不纯物质的高级薄膜。

公开(公告)号：US20190190002A1

公开(公告)日：2019-06-20

申请号：US16322207

申请日：2017-08-02

申请人： Sigma Lithium Limited

发明人： Vladimir KOLOSNITSYN ,  Sergey MOCHALOV ,  Azat NURGALIEV ,  Aleksei IVANOV ,  Elena KUZMINA ,  Elena KARASEVA

IPC分类号： H01M4/04 ,  C23C14/35 ,  H01M4/38 ,  H01M4/1395 ,  C23C14/14 ,  C23C14/34 ,  H01M4/134

CPC分类号： H01M4/0426 ,  C23C14/14 ,  C23C14/3428 ,  C23C14/35 ,  H01M4/0404 ,  H01M4/0423 ,  H01M4/134 ,  H01M4/1395 ,  H01M4/382

摘要： A method of forming a lithium coating on a substrate, the method comprising: melting a solid lithium target to form a molten lithium target; agitating the molten lithium target; vaporising at least part of the agitated molten lithium target to form a vaporised material; and condensing the vaporised material on a substrate to form a lithium coating.

公开(公告)号：US20050173240A1

公开(公告)日：2005-08-11

申请号：US10505813

申请日：2003-01-27

申请人： Takehiko Hihara ,  Kenji Sumiyama ,  Ryoji Katoh

发明人： Takehiko Hihara ,  Kenji Sumiyama ,  Ryoji Katoh

IPC分类号： B01J19/00 ,  C23C14/34 ,  H01L51/40 ,  C23C14/00 ,  C23C14/32

CPC分类号： C23C14/3464 ,  C23C14/228 ,  C23C14/34 ,  C23C14/3428 ,  H01J37/34 ,  H01L51/0002 ,  H01L51/001

摘要： A semiconductor or nonconductor vapor is generated by sputtering targets 11U, 11D in a first sputtering chamber 10, while a metal vapor is generated by sputtering targets 21U, 21D in a second sputtering chamber 20. The semiconductor or nonconductor vapor and the metal vapor are aggregated to clusters during travelling through a cluster-growing tube 32 and injected as a cluster beam to a high-vacuum deposition chamber 30, so as to deposit composite clusters on a substrate 35. The produced composite clusters are useful in various fields due to high performance, e.g. high-sensitivity sensors, high-density magnetic recording media, nano-magnetic media for transportation of medicine, catalysts, permselective membranes, optical-magnet sensors and low-loss soft magnetic materials.

摘要翻译： 通过在第一溅射室10中溅射靶11U，11D而产生半导体或非导体蒸气，同时通过溅射靶21U，21D在第二溅射室20中产生金属蒸气。 半导体或非导体蒸汽和金属蒸汽在穿过集束生长管32行进期间聚集成簇并且作为簇束注入高真空沉积室30，以将复合簇沉积在基板35上。 由于高性能，所产生的复合簇在各种领域是有用的，例如 高灵敏度传感器，高密度磁记录介质，药物输送用纳米磁性介质，催化剂，选择渗透膜，光磁传感器和低损耗软磁材料。

公开(公告)号：US06787010B2

公开(公告)日：2004-09-07

申请号：US09997162

申请日：2001-11-29

申请人： Jerome J. Cuomo ,  N. Mark Williams

发明人： Jerome J. Cuomo ,  N. Mark Williams

IPC分类号： C23C1435

CPC分类号： C30B23/02 ,  C23C14/0063 ,  C23C14/3428 ,  C23C14/354 ,  C23C14/355 ,  C30B29/403 ,  C30B29/406 ,  H01J37/3408

摘要： A sputter transport device comprises a sealed chamber, a negatively-biased target cathode holder disposed in the chamber, and a substrate holder disposed in the chamber and spaced at a distance from the target cathode. A target cathode is bonded to the target cathode holder. A magnetron assembly is disposed in the chamber proximate to the target cathode. A negatively-biased, non-thermionic electron/plasma injector assembly is disposed between the target cathode and the substrate holder. The injector assembly fluidly communicates with a gas source and includes a plurality of hollow cathodes. Each hollow cathode includes an orifice communicating with the chamber. The device can be used to produce thin-films and ultra-thick materials in polycrystalline, single-crystal and epitaxial forms, and thus to produce articles and devices that are useful as metallic or insulating coatings, and as bulk semiconductor and optoelectronic materials.

摘要翻译： 溅射输送装置包括密封室，设置在室中的负偏压目标阴极保持器和设置在室中并与靶阴极间隔一定距离的衬底保持器。 目标阴极与目标阴极保持器结合。 磁控管组件设置在靠近目标阴极的腔室中。 负极偏置的非热电子/等离子体注入器组件设置在目标阴极和衬底保持器之间。 喷射器组件与气体源流体连通并且包括多个空心阴极。 每个空心阴极包括与腔连通的小孔。 该器件可用于以多晶，单晶和外延形式生产薄膜和超厚材料，从而生产可用作金属或绝缘涂层以及作为体半导体和光电子材料的制品和器件。

公开(公告)号：US09584088B2

公开(公告)日：2017-02-28

申请号：US13644040

申请日：2012-10-03

申请人： Murata Manufacturing Co., Ltd.

发明人： Taku Kikuchi ,  Hideaki Takahashi

IPC分类号： H03H3/02 ,  H03H9/02 ,  C23C14/34 ,  H03H3/10 ,  H03H3/00 ,  H03H9/00 ,  H03H9/145 ,  C23C14/00 ,  H03H3/04 ,  H03H9/72

CPC分类号： H03H3/10 ,  C23C14/0036 ,  C23C14/0042 ,  C23C14/0073 ,  C23C14/34 ,  C23C14/3407 ,  C23C14/3421 ,  C23C14/3428 ,  C23C14/3435 ,  H03H3/00 ,  H03H3/02 ,  H03H9/00 ,  H03H9/02 ,  H03H9/02228 ,  H03H9/02559 ,  H03H9/02574 ,  H03H9/02582 ,  H03H9/02834 ,  H03H9/14538 ,  H03H9/725 ,  H03H2003/0428 ,  Y10T29/42

摘要： A method for manufacturing an acoustic wave device with an excellent frequency-temperature profile is performed such that the acoustic wave device produced includes a piezoelectric substrate, an IDT electrode located on the piezoelectric substrate, and a dielectric film mainly including Si and O and arranged on the piezoelectric substrate to cover the IDT electrode. The dielectric film is formed by sputtering in a sputtering gas containing H2O.

摘要翻译： 进行具有优异的频率 - 温度分布的声波器件的制造方法，使得所制造的声波器件包括压电基片，位于压电基片上的IDT电极，以及主要包括Si和O的电介质膜，并布置在 压电基板覆盖IDT电极。 电介质膜通过溅射在含有H 2 O的溅射气体中形成。

公开(公告)号：US09127353B2

公开(公告)日：2015-09-08

申请号：US13359802

申请日：2012-01-27

申请人： Seiken Matsumoto ,  Seiji Kuwabara

发明人： Seiken Matsumoto ,  Seiji Kuwabara

IPC分类号： C23C14/34 ,  C23C14/35 ,  H01J37/34

CPC分类号： C23C14/3407 ,  C23C14/3428 ,  C23C14/3464 ,  C23C14/352 ,  H01J37/3417 ,  H01J37/3429 ,  H01J37/3447

摘要： Provided are a film-forming apparatus and a film-forming method capable of preventing complication of an apparatus mechanism in formation of a thin film of multiple materials by sputtering to simplify the apparatus mechanism and preventing an increase in an apparatus cost. The film-forming apparatus includes a vacuum chamber, a substrate holder for holding a substrate, cathode mechanisms for supporting targets respectively so that the targets can be opposed to the substrate in the vacuum chamber, and shutters movable forward and backward individually between the targets made of different materials and the substrate to block or pass film-forming particles generated from the targets. At least one of the shutters is formed of a target material different from those for the targets so that the at least one of the shutters is configured as a shutter that also functions as a target.

摘要翻译： 提供一种成膜装置和成膜方法，能够通过溅射来防止形成多种材料的薄膜的装置机构的复杂化，从而简化装置机构并防止装置成本的增加。 成膜装置包括真空室，用于保持基板的基板保持器，用于分别支撑目标的阴极机构，使得靶可以与真空室中的基板相对，以及在所制成的目标之间单独地向前和向后移动的百叶窗 的不同材料和基材以阻挡或通过由靶产生的成膜颗粒。 百叶窗中的至少一个由与目标材料不同的目标材料形成，使得至少一个快门被配置为也用作目标的快门。

公开(公告)号：US20140367250A1

公开(公告)日：2014-12-18

申请号：US14371551

申请日：2013-01-18

申请人： NUVOSUN, INC.

发明人： Bruce D. Hachtmann ,  Josef Bonigut ,  Qing Qian ,  Dennis R. Hollars ,  Xiaodong Liu

IPC分类号： H01L31/18 ,  H01J37/34

CPC分类号： H01L31/18 ,  C23C14/0057 ,  C23C14/0063 ,  C23C14/0623 ,  C23C14/243 ,  C23C14/3428 ,  C23C14/352 ,  C23C14/562 ,  H01J37/3405 ,  H01J37/3408 ,  H01J37/3417 ,  H01J37/3429 ,  H01J37/3435 ,  H01J37/3455 ,  H01L31/206 ,  Y02E10/50 ,  Y02P70/521

摘要： A deposition system for depositing a thin film photovoltaic cell on a flexible substrate comprises an enclosure that is fluidically isolated from an environment external to the enclosure, and a plurality of deposition chambers in the enclosure. At least one deposition chamber of the plurality of deposition chambers comprises a magnetron sputtering apparatus that directs a material flux of one or more target materials towards a portion of the flexible substrate that is disposed in the at least one deposition chamber of the plurality of deposition chambers. A substrate payout roller in the enclosure provides a flexible substrate that is directed through each of the plurality of deposition chambers to a substrate take-up roller in the enclosure. At least one guide roller in the enclosure is configured to direct the flexible substrate to or from a given deposition chamber among the plurality of deposition chambers.

摘要翻译： 用于在柔性基板上沉积薄膜光伏电池的沉积系统包括与外壳外部的环境流体隔离的外壳和外壳中的多个沉积室。 多个沉积室中的至少一个沉积室包括磁控溅射装置，其将一种或多种目标材料的材料通量引向柔性基板的设置在多个沉积室的至少一个沉积室中的部分 。 外壳中的基板支承辊提供柔性基板，该柔性基板通过多个沉积室中的每一个引导到外壳中的基板卷取辊。 外壳中的至少一个引导辊构造成将柔性基板引导到多个沉积室中的给定沉积室或从多个沉积室中的给定沉积室引导。

公开(公告)号：US08691064B2

公开(公告)日：2014-04-08

申请号：US11825733

申请日：2007-07-09

申请人： Daniel B. Mitchell ,  Geoffrey G Harris

发明人： Daniel B. Mitchell ,  Geoffrey G Harris

IPC分类号： C23C14/34

CPC分类号： C23C14/30 ,  C23C14/26 ,  C23C14/3421 ,  C23C14/3428 ,  C23C14/46

摘要： A deposition apparatus includes a deposition source that produces a deposition flow of a deposited material and has an evaporation source with a material to be deposited therein, and a sputtering source that produces sputtering ions directed at the material to be deposited in the evaporation source. A deposition target is in facing relationship to the deposition source. The sputtering source is operated simultaneously with the evaporation source.

摘要翻译： 沉积装置包括沉积源，该沉积源产生沉积材料的沉积流并具有蒸发源，其中沉积有材料，以及产生溅射离子的溅射源，所述溅射离子指向待沉积在蒸发源中的材料。 沉积靶与沉积源成为面对关系。 溅射源与蒸发源同时运行。

公开(公告)号：US11952654B2

公开(公告)日：2024-04-09

申请号：US17287702

申请日：2019-10-22

申请人： EVATEC AG

发明人： Dominik Jaeger ,  Thomas Tschirky ,  Marco Rechsteiner ,  Heinz Felzer ,  Hartmut Rohrmann

IPC分类号： C23C14/34 ,  C23C14/35 ,  C23C14/54 ,  H01J37/34

CPC分类号： C23C14/3428 ,  C23C14/35 ,  C23C14/54 ,  H01J37/3405 ,  H01J37/3426 ,  H01J37/3435 ,  H01J37/3438 ,  H01J37/3441 ,  H01J2237/332

摘要： A sputtering device to sputter a liquid target. The sputtering device including a trough to receive a liquid target material and a device to stir or agitate the liquid target material. The device configured to degas the liquid target material or/and to dissipate solid particles or islands on a surface of the target or/and to move such particles or islands from an active surface region to a passive surface region and/or vice-versa, whereby the passive surface region is at least 50% less exposed to sputtering as the active surface region.