公开(公告)号：US20120153420A1

公开(公告)日：2012-06-21

申请号：US13324973

申请日：2011-12-13

Applicant: Joon Sung LEE ,  Yong Sun Yoon

Inventor： Joon Sung LEE ,  Yong Sun Yoon

IPC: H01L31/0232 ,  H01L31/18

CPC classification number: H01L31/02327 ,  G01J1/0214 ,  G01J1/0407 ,  G01T1/2002 ,  G01T1/248 ,  H01L27/14627

Abstract: Disclosed is an optical structure formed in an upper side of a semiconductor photomultiplier having a plurality of microcells. The optical structure includes: a first dielectric body formed in an upper side of a dead area between light receiving areas of the respective microcells and having a cross-sectional structure in which a lower side is wider than an upper side; and a second dielectric body formed in the upper side of the light receiving area of each microcell and having a cross-sectional structure in which a lower side is narrower than an upper side, and a refractive index of the second dielectric body is higher than that of the first dielectric body.

Abstract translation: 公开了一种形成在具有多个微小区的半导体光电倍增管的上侧的光学结构。 光学结构包括：第一电介质体，形成在各个微电池的光接收区域之间的死区的上侧，并且具有下侧宽于上侧的横截面结构; 以及形成在每个微电池的光接收区域的上侧的第二电介质体，并且具有下侧比上侧窄的截面结构，并且第二电介质的折射率高于 的第一绝缘体。

公开(公告)号：US20130056843A1

公开(公告)日：2013-03-07

申请号：US13601948

申请日：2012-08-31

Applicant: Joon Sung LEE ,  Yong Sun YOON

Inventor： Joon Sung LEE ,  Yong Sun YOON

IPC: H01L31/0216

CPC classification number: H01L31/107 ,  H01L27/1446 ,  H01L27/14643 ,  H01L27/14689

Abstract: Provided are a photomultiplier and a manufacturing method thereof. The manufacturing method thereof may include forming a mask layer on an active region of a substrate doped with a first conductive type, ion implanting a second conductive type impurity opposite to the first conductive type into the substrate to form a first doped region in the active region under the mask layer and an non-active region exposed from the mask layer, forming a device isolation layer on the non-active region, removing the mask layer, and ion implanting the second conductive type impurity having a concentration higher than that of the first doped region into an upper portion of the first doped region in the active region to form a second doped region shallower than the first doped region.

Abstract translation: 提供一种光电倍增管及其制造方法。 其制造方法可以包括在掺杂有第一导电类型的衬底的有源区上形成掩模层，将与第一导电类型相反的第二导电类型杂质注入到衬底中以在有源区中形成第一掺杂区 在掩模层下面和从掩模层露出的非有源区，在非有源区上形成器件隔离层，去除掩模层，以及离子注入浓度高于第一导电型杂质的第二导电型杂质 掺杂区域进入有源区域中的第一掺杂区域的上部，以形成比第一掺杂区域浅的第二掺杂区域。

公开(公告)号：US20120153423A1

公开(公告)日：2012-06-21

申请号：US13330501

申请日：2011-12-19

Applicant: Joon Sung LEE

Inventor： Joon Sung LEE

IPC: H01L27/142

CPC classification number: H01L31/103 ,  H01L27/1446 ,  H01L27/1463

Abstract: The present invention relates to a silicon photomultiplier with trench isolation for maintaining the photon detection efficiency high while increasing the dynamic range, by reducing the degradation of the effective fill factor that follows the increase of cell number density intended for a dynamic range enhancement.

Abstract translation: 本发明涉及一种具有沟槽隔离的硅光电倍增器，通过减少旨在用于动态范围增强的细胞数密度增加后的有效填充因子的降低，从而保持光子检测效率高，同时增加动态范围。

公开(公告)号：US20120139071A1

公开(公告)日：2012-06-07

申请号：US13289256

申请日：2011-11-04

Applicant: Joon Sung LEE ,  Yong Sun YOON

Inventor： Joon Sung LEE ,  Yong Sun YOON

IPC: H01L31/0224

CPC classification number: H01L31/103 ,  H01L27/1461 ,  H01L27/14683 ,  H01L31/107

Abstract: Provided are a silicon photomultiplier and method for fabricating silicon photomultiplier. The silicon photomultiplier includes a first conductive type semiconductor layer; a first conductive type buried layer disposed in a lower portion of the first conductive type semiconductor layer, and having a higher impurity concentration than the first conductive type semiconductor layer; quench resistors spaced from each other and disposed on the first conductive type semiconductor layer; a transparent insulator formed on the first conductive type semiconductor layer, and exposing the quench resistors; second conductive type doped layers disposed under the quench resistors to contact the first conductive type semiconductor layer; and a transparent electrode commonly connected to the quench resistors electrically.

Abstract translation: 提供了硅光电倍增管和制造硅光电倍增管的方法。 硅光电倍增管包括第一导电型半导体层; 第一导电型掩埋层，设置在第一导电类型半导体层的下部，并且具有比第一导电类型半导体层更高的杂质浓度; 淬火电阻彼此间隔开并设置在第一导电类型半导体层上; 形成在所述第一导电类型半导体层上的透明绝缘体，并暴露所述骤冷电阻器; 设置在所述骤冷电阻器下方的第二导电型掺杂层以接触所述第一导电类型半导体层; 以及通常连接到骤冷电阻器的透明电极。