摘要:
An organic light-emitting display having an improved aperture ratio, the organic light-emitting display including a rear electrode, an opposite electrode, and a pixel electrode between the rear electrode and the opposite electrode. Here, an insulating layer is interposed between the pixel electrode and the rear electrode, wherein the pixel electrode, the insulating layer, and the rear electrode are configured as a capacitor of the organic light-emitting display. In such a structure, as the capacitor is disposed in a light-emitting area where the pixel electrode exists, it is not necessary to provide an additional space for a capacitor, thus improving an aperture ratio of the display.
摘要:
An organic light-emitting display having an improved aperture ratio, the organic light-emitting display including a rear electrode, an opposite electrode, and a pixel electrode between the rear electrode and the opposite electrode. Here, an insulating layer is interposed between the pixel electrode and the rear electrode, wherein the pixel electrode, the insulating layer, and the rear electrode are configured as a capacitor of the organic light-emitting display. In such a structure, as the capacitor is disposed in a light-emitting area where the pixel electrode exists, it is not necessary to provide an additional space for a capacitor, thus improving an aperture ratio of the display.
摘要:
An organic light emitting device and a manufacturing method thereof, including a first signal line and a second signal line intersecting each other on an insulating substrate, a switching thin film transistor connected to the first signal line and the second signal line, a driving thin film transistor connected to the switching thin film transistor, and a light emitting diode (“LD”) connected to the driving thin film transistor. The driving thin film transistor includes a driving control electrode and a driving semiconductor overlapping the driving control electrode, crystallized silicon having a doped region and a non-doped region, a driving gate insulating layer disposed between the driving control electrode and the driving semiconductor, and a driving input electrode and a driving output electrode opposite to each other on the driving semiconductor, wherein the interface between the driving gate insulating layer and the driving semiconductor includes nitrogen gas.
摘要:
A thin film transistor and a method of manufacturing the thin film transistor is disclosed. The thin film transistor includes first and second ohmic contact layers, an activation layer, an insulating layer, a source electrode formed on the insulating layer and connected to the first ohmic contact layer through first contact hole, a drain electrode formed on the insulating layer and connected to the second ohmic contact layer through second contact hole, a gate electrode formed on the insulating layer between the source electrode and the drain electrode and overlapping the activation layer, and a protective layer formed on the source electrode, the drain electrode, and the gate electrode.
摘要:
An electro-luminescence device including an electro-luminescence element and a thin film transistor electrically connected to the electro-luminescence element. The thin film transistor includes a gate electrode formed over a substrate, an insulating layer formed over the gate electrode, and a first semiconductor pattern formed over the insulating layer. An etch stop layer is formed over the first semiconductor layer. A second semiconductor pattern is formed over the etch stop layer at one side of the etch stop layer, and a third semiconductor pattern is formed over the etch stop layer at another side of the etch stop layer. A source electrode is formed over the second semiconductor pattern, and a drain electrode is formed over the third semiconductor pattern.
摘要:
A display device is provided, which includes: a light emitting element; a storage capacitor; a driving transistor supplying driving current to the light emitting element to emit light; a first switching transistor applying a data voltage to the driving transistor and the storage capacitor in response to a first scanning signal, a light sensor sensing amount of light according to the light emission of the light emitting element and generates a sensing signal depending on the sensed light amount; and a signal controller determining luminance corresponding to the sensing signal, comparing the determined luminance and a target luminance corresponding to the data voltage, and modifies an image signal.
摘要:
An electro-luminescence device including an electro-luminescence element and a thin film transistor electrically connected to the electro-luminescence element. The thin film transistor includes a gate electrode formed over a substrate, an insulating layer formed over the gate electrode, and a first semiconductor pattern formed over the insulating layer. An etch stop layer is formed over the first semiconductor layer. A second semiconductor pattern is formed over the etch stop layer at one side of the etch stop layer, and a third semiconductor pattern is formed over the etch stop layer at another side of the etch stop layer. A source electrode is formed over the second semiconductor pattern, and a drain electrode is formed over the third semiconductor pattern.
摘要:
An OLED display includes a pixel having a first sub-pixel, a second sub-pixel, a third sub-pixel, and a fourth sub-pixel, each of which displays a different color, a gate line for transmitting gate signals to the pixel, a data line for transmitting data signals to the pixel, a first driving voltage line that transmits a driving voltage to the pixel and is substantially parallel to the data line, and a second driving voltage line that is connected to the first driving voltage line and is substantially parallel to the gate line.
摘要:
A display device is provided, which includes: a light emitting element; a storage capacitor; a driving transistor supplying driving current to the light emitting element to emit light; a first switching transistor applying a data voltage to the driving transistor and the storage capacitor in response to a first scanning signal, a light sensor sensing amount of light according to the light emission of the light emitting element and generates a sensing signal depending on the sensed light amount; and a signal controller determining luminance corresponding to the sensing signal, comparing the determined luminance and a target luminance corresponding to the data voltage, and modifies an image signal.
摘要:
An organic light emitting diode (“OLED”) display includes a substrate, a gate line, a data line, a driving voltage line, a light blocking member, a switching thin film transistor (“TFT”), a driving TFT, and an OLED, wherein the driving voltage line includes a portion parallel to at least one of the gate line and the data line, the light blocking member is formed under at least one of the gate line, the data line, and the driving voltage line, the switching TFT is connected to the gate line and the data line and includes an amorphous semiconductor, the driving TFT is connected to the switching TFT and includes a polycrystalline semiconductor, and the OLED is connected to the driving TFT.