Controller for controlling non-volatile semiconductor memory and method of controlling non-volatile semiconductor memory

    公开(公告)号:US12259813B2

    公开(公告)日:2025-03-25

    申请号:US18624930

    申请日:2024-04-02

    Abstract: According to one embodiment, a write instructing unit instructs a data access unit to write, in a storage area of a data storage unit indicated by a first physical address, write object data, instructs a management information access unit to update address conversion information, and instructs a first access unit to update the first physical address. A compaction unit extracts a physical address of compaction object data, instructs the data access unit to read the compaction object data stored in a storage area of the data storage unit indicated by the physical address, instructs the data access unit to write the compaction object data in a storage area of the data storage unit indicated by a second physical address, instructs the management information access unit to update the address conversion information, and instructs a second access unit to update the second physical address.

    Memory system with nonvolatile semiconductor memory

    公开(公告)号:US12265706B2

    公开(公告)日:2025-04-01

    申请号:US18396352

    申请日:2023-12-26

    Abstract: According to one embodiment, a memory system includes a non-volatile semiconductor memory, a block management unit, and a transcription unit. The semiconductor memory includes a plurality of blocks to which data can be written in both the first mode and the second mode. The block management unit manages a block that stores therein no valid data as a free block. When the number of free blocks managed by the block management unit is smaller than or equal to a predetermined threshold value, the transcription unit selects one or more used blocks that stores therein valid data as transcription source blocks and transcribes valid data stored in the transcription source blocks to free blocks in the second mode.

    Memory system managing counters
    5.
    发明授权

    公开(公告)号:US12229412B2

    公开(公告)日:2025-02-18

    申请号:US18176446

    申请日:2023-02-28

    Abstract: A memory system includes a nonvolatile memory that includes a plurality of regions; a volatile memory; and a controller that is connected to the nonvolatile memory and the volatile memory. The controller is configured to store in the volatile memory a plurality of first counter values each indicating the number of times each of the plurality of regions has been accessed and a plurality of second counter values respectively corresponding to the plurality of first counter values, and write the first counter value of a first region of the plurality of regions to the nonvolatile memory in response to the second counter value of the first region being equal to or more than a threshold value.

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