公开(公告)号：US11860109B2

公开(公告)日：2024-01-02

申请号：US17680469

申请日：2022-02-25

Applicant: Korea Advanced Institute of Science and Technology

Inventor： Sanghyeon Kim ,  Jinha Lim ,  Joonsup Shim

IPC: G01N21/95 ,  H01L21/762 ,  G02B6/122

CPC classification number: G01N21/9501 ,  G02B6/122 ,  H01L21/7624

Abstract: Various embodiments relate to an optical detection element and GOI (Ge-on-insulator) device for ultra-small on-chip optical sensing, and a manufacturing method of the same. According to various embodiments, the optical detection element and the GOI device may be implemented on a GOI structure comprising a germanium (Ge) layer, and the GOI device may be implemented to have an optical detection element. Specifically, the GOI device may include a GOI structure with a waveguide region comprising a germanium layer, a light source element configured to generate light for the waveguide region, and at least one optical detection element configured to detect light coming from the waveguide region. At least one slot configured to collect light from the light source element may be formed in the germanium layer in the waveguide region. The light source element may generate light so as to be coupled to the germanium layer in the waveguide region. The optical detection element may detect heat generated as light is propagated from the germanium layer.

公开(公告)号：US11804562B2

公开(公告)日：2023-10-31

申请号：US17454404

申请日：2021-11-10

Applicant: KOREA ADVANCED INSTITUTE OF SCIENCE AND TECHNOLOGY

Inventor： Sanghyeon Kim ,  DaeMyeong Geum ,  SeungYeop Ahn ,  Jinha Lim

IPC: H01L31/0352 ,  H01L31/0232 ,  H01L31/18 ,  H01L49/02 ,  H01L27/144

CPC classification number: H01L31/035236 ,  H01L27/1443 ,  H01L28/40 ,  H01L31/0232 ,  H01L31/186

Abstract: Various embodiments relate to a superlattice photodetector and a method of manufacturing the same. The superlattice photodetector includes an absorption layer for absorbing incident light and a waveguide layer coupled with the absorption layer and enabling the incident light to be waveguided within the absorption layer. The waveguide layer may include a periodic structure in which a plurality of metal patterns and a plurality of dielectric patterns are repeatedly arranged. According to various embodiments, the superlattice photodetector can be thinned while having improved performance.