公开(公告)号：US20230404453A1

公开(公告)日：2023-12-21

申请号：US18191572

申请日：2023-03-28

Applicant: KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY

Inventor： Jin-Dong SONG ,  Jee Hyun CHOI

IPC: A61B5/16 ,  A61B5/00 ,  A61B5/377 ,  A61B5/372

CPC classification number: A61B5/165 ,  A61B5/0017 ,  A61B2560/0431 ,  A61B5/377 ,  A61B5/372 ,  A61B5/0006

Abstract: A device for monitoring brain-object interactions in a community includes a probe module attached to each individual and including a stimulation device, a specific wavelength emitting device, an infrared (IR) receiving device and a recording memory; a central controller to regulate a connection between the probe module and at least one object to control and monitor the probe module or the object; a plurality of IR emitters to transmit a time sync signal and a command to the probe module to monitor the individual; and a plurality of specific wavelength receivers to transmit the electrical signal received by the probe module to the central controller. Accordingly, it is possible to integratedly control the connection between the probe module and the object through the central controller and prevent confusion and loss of data transmission, thereby achieving efficient monitoring of the community.

公开(公告)号：US20190267453A1

公开(公告)日：2019-08-29

申请号：US16283411

申请日：2019-02-22

Applicant: KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY

Inventor： Hyunsu JU ,  Jin-Dong SONG ,  Joonyeon CHANG ,  Gyosub LEE

IPC: H01L29/205 ,  H01L29/737 ,  H01L29/66

Abstract: Provided is a Group III-V compound semiconductor device. The device includes a substrate, a compound semiconductor layer provided on the substrate; and a buffer layer interposed between the compound semiconductor layer and the substrate. The compound semiconductor layer includes a first semiconductor area having a first conductivity type and a second semiconductor area having a second conductivity type. The buffer layer includes a high electron density area. In the buffer layer, an electron density of the high electron density area is higher than an electron density outside the high electron density area.

公开(公告)号：US20200041825A1

公开(公告)日：2020-02-06

申请号：US16528633

申请日：2019-08-01

Applicant: KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY

Inventor： Jae-Hoon HAN ,  Sanghyeon KIM ,  Pavlo BIDENKO ,  Subin LEE ,  Jin-Dong SONG

IPC: G02F1/05

Abstract: An optical phase shifter according to an embodiment for achieving the object of the present disclosure includes a first semiconductor layer formed on a substrate, a second semiconductor layer having opposite polarity to the first semiconductor layer, an insulating layer formed between the first semiconductor layer and the second semiconductor layer, and including ferroelectrics, a first electrode connected to the first semiconductor layer, and a second electrode connected to the second semiconductor layer. According to an embodiment, the introduction of ferroelectric materials to a semiconductor-insulator-semiconductor (SIS) optical phase shifter brings about improvement in charge collection efficiency resulting from the negative capacitance effect, thereby achieving higher phase modulation efficiency and lower power consumption. Additionally, it is possible to realize a new structure of optical switch or modulator device through design changes of the type of ferroelectrics and the structural variables.

公开(公告)号：US20140217441A1

公开(公告)日：2014-08-07

申请号：US13906618

申请日：2013-05-31

Applicant: KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY

Inventor： Jin-Dong SONG ,  Eunhye LEE ,  Min Hwan BAE ,  Won Jun CHOI ,  Jae Jin YOON ,  Il KI HAN

IPC: H01L31/0216 ,  H01L33/44

CPC classification number: H01L31/02168 ,  H01L33/44 ,  Y02E10/50

Abstract: In an aspect of the present disclosure, there is disclosed a manufacture method of an antireflection coating using a self-assembly nano structure, which includes forming a first metal droplet on a substrate by means of droplet epitaxy, depositing a first non-metal on the formed first metal droplet, and forming a first nano compound crystal by means of self-assembly of the deposited first non-metal and the first metal droplet.

Abstract translation: 在本公开的一方面，公开了使用自组装纳米结构的抗反射涂层的制造方法，其包括通过液滴外延在基板上形成第一金属液滴，在第一非金属上沉积第一金属液滴 形成第一金属液滴，并通过沉积的第一非金属和第一金属液滴的自组装形成第一纳米复合晶体。

公开(公告)号：US20190312654A1

公开(公告)日：2019-10-10

申请号：US16376672

申请日：2019-04-05

Applicant: KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY

Inventor： Jaehoon HAN ,  Sanghyeon KIM ,  Hyunsu JU ,  Jin-Dong SONG

IPC: H04B10/80 ,  H04B10/66 ,  H04B10/50

Abstract: A method for optical interconnection between semiconductor chips according to an embodiment include converting an electrical signal to an optical signal, transmitting the optical signal to a second substrate disposed above or below a first substrate using an optical transmitter provided on the first substrate, receiving the optical signal using an optical detector provided on the second substrate, and converting the received optical signal to an electrical signal. Accordingly, using a mid-infrared wavelength range of light that is transparent to semiconductor materials such as silicon and next-generation high-mobility materials, it is possible to enable interconnection between stacked semiconductor chips without using metal wiring. Using optical interconnection, it is possible to significantly reduce the bandwidth and power consumption, and overcome the limitations of TSV technology, and it is possible to extend the photonics technology and platform established in the existing Si Photonics, thereby reducing the cost required for design.

公开(公告)号：US20130330083A1

公开(公告)日：2013-12-12

申请号：US13744564

申请日：2013-01-18

Applicant: Yong Gwan Kim ,  KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY

Inventor： Jin-Dong SONG ,  Il Ki HAN ,  Won Jun CHOI ,  Jung Il LEE

IPC: H04B10/80

CPC classification number: H04B10/80 ,  H04B13/02

Abstract: An underwater communication apparatus for performing an optical communication with an external device under water includes: a current control unit that modulates first data to be transmitted to the external device into a first current; and a light transmitting unit that transmits light with a wavelength of 450 to 500 nm corresponding to the first current to the external device.

Abstract translation: 一种用于与水下的外部设备进行光通信的水下通信设备包括：电流控制单元，其将要发送到外部设备的第一数据调制成第一电流; 以及将与第一电流对应的波长为450〜500nm的光透射到外部装置的发光单元。