公开(公告)号：US20200041825A1

公开(公告)日：2020-02-06

申请号：US16528633

申请日：2019-08-01

Applicant: KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY

Inventor： Jae-Hoon HAN ,  Sanghyeon KIM ,  Pavlo BIDENKO ,  Subin LEE ,  Jin-Dong SONG

IPC: G02F1/05

Abstract: An optical phase shifter according to an embodiment for achieving the object of the present disclosure includes a first semiconductor layer formed on a substrate, a second semiconductor layer having opposite polarity to the first semiconductor layer, an insulating layer formed between the first semiconductor layer and the second semiconductor layer, and including ferroelectrics, a first electrode connected to the first semiconductor layer, and a second electrode connected to the second semiconductor layer. According to an embodiment, the introduction of ferroelectric materials to a semiconductor-insulator-semiconductor (SIS) optical phase shifter brings about improvement in charge collection efficiency resulting from the negative capacitance effect, thereby achieving higher phase modulation efficiency and lower power consumption. Additionally, it is possible to realize a new structure of optical switch or modulator device through design changes of the type of ferroelectrics and the structural variables.

公开(公告)号：US20230010061A1

公开(公告)日：2023-01-12

申请号：US17839207

申请日：2022-06-13

Applicant: KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY

Inventor： SEUNG HYUB BAEK ,  RUIGUANG NING ,  Jae-Hoon HAN ,  Byung Chul LEE ,  Jungho YOON ,  Hyun-Cheol SONG ,  Seong Keun KIM ,  CHONG YUN KANG ,  Ji-Won CHOI ,  JIN SANG KIM

IPC: H01L41/313 ,  H01L41/08 ,  H01L41/187

Abstract: A semiconductor substrate with oxide single crystal heterostructures, to which a sacrificial layer, an epitaxy functional oxide thin film having a perovskite structure and a metal layer are grown on an oxide single crystal substrate, prepared another metal layer on a semiconductor substrate, and bonded the metal layer of the oxide single crystal substrate to the metal layer of the semiconductor substrate to be face each other, and separated the oxide single crystal substrate by selectively etching and removing only the sacrificial layer after the bonding.