公开(公告)号：US09966134B1

公开(公告)日：2018-05-08

申请号：US15407357

申请日：2017-01-17

Applicant: KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY

Inventor： Jong Hyuk Park ,  Sang-Soo Lee ,  Keun-Young Shin ,  Young Jin Kim ,  Min Park ,  Heesuk Kim ,  Jeong Gon Son ,  Wan Ki Bae

IPC: G11C13/00 ,  H01L45/00 ,  H01L27/11

CPC classification number: H01L45/1253 ,  G11C11/5685 ,  G11C13/0002 ,  G11C13/0007 ,  G11C13/0016 ,  G11C13/003 ,  G11C13/004 ,  G11C13/0069 ,  G11C2013/0073 ,  G11C2213/52 ,  G11C2213/71 ,  G11C2213/77 ,  H01L27/11 ,  H01L27/2463 ,  H01L45/1233 ,  H01L45/1273 ,  H01L45/16 ,  H01L45/1675

Abstract: Disclosed is a multilevel nonvolatile resistive random-access memory device including a lower electrode, an upper electrode, and an insulation film interposed between the lower electrode and the upper electrode. Each of the lower electrode and the upper electrode includes a plate-shaped portion, and a patterned portion formed on the plate-shaped portion, and the patterned portion includes a protruding 3-dimensional prism structure pattern in which a plurality of prism-shaped structures is repeatedly arranged at a constant interval in a given direction. The patterned portion of the lower electrode and the patterned portion of the upper electrode are arranged to face each other, and a longitudinal direction of the prism-shaped structures of the lower electrode patterned portion and a longitudinal direction of the prism-shaped structures of the upper electrode patterned portion cross each other.