公开(公告)号：US20230010061A1

公开(公告)日：2023-01-12

申请号：US17839207

申请日：2022-06-13

Applicant: KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY

Inventor： SEUNG HYUB BAEK ,  RUIGUANG NING ,  Jae-Hoon HAN ,  Byung Chul LEE ,  Jungho YOON ,  Hyun-Cheol SONG ,  Seong Keun KIM ,  CHONG YUN KANG ,  Ji-Won CHOI ,  JIN SANG KIM

IPC: H01L41/313 ,  H01L41/08 ,  H01L41/187

Abstract: A semiconductor substrate with oxide single crystal heterostructures, to which a sacrificial layer, an epitaxy functional oxide thin film having a perovskite structure and a metal layer are grown on an oxide single crystal substrate, prepared another metal layer on a semiconductor substrate, and bonded the metal layer of the oxide single crystal substrate to the metal layer of the semiconductor substrate to be face each other, and separated the oxide single crystal substrate by selectively etching and removing only the sacrificial layer after the bonding.