公开(公告)号：US20210336561A1

公开(公告)日：2021-10-28

申请号：US16953859

申请日：2020-11-20

Applicant: KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY

Inventor： Hyun-Cheol SONG ,  CHONG YUN KANG ,  JIN SANG KIM ,  Ji-Won CHOI ,  SEUNG HYUB BAEK ,  Seong Keun KIM

IPC: H02N2/18 ,  H01L41/113 ,  H01L41/193

Abstract: Proposed is a self-resonance tuning piezoelectric energy harvester with broadband frequency, including: a piezoelectric beam which is extended along a horizontal direction; a fixing member which fixes opposite ends of the piezoelectric beam; and a mobile mass which the piezoelectric beam passes through, and which is capable of self-movement along the piezoelectric beam through a through-hole which has a free space in addition to a space which the piezoelectric beam passes through, wherein as the mobile mass moves to a position of the piezoelectric beam, generated displacement of a piezoelectric beam is increased, and as the generated displacement becomes greater than the free space, the mobile mass is fixed to a position of a piezoelectric beam at which resonance will occur.

公开(公告)号：US20230010061A1

公开(公告)日：2023-01-12

申请号：US17839207

申请日：2022-06-13

Applicant: KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY

Inventor： SEUNG HYUB BAEK ,  RUIGUANG NING ,  Jae-Hoon HAN ,  Byung Chul LEE ,  Jungho YOON ,  Hyun-Cheol SONG ,  Seong Keun KIM ,  CHONG YUN KANG ,  Ji-Won CHOI ,  JIN SANG KIM

IPC: H01L41/313 ,  H01L41/08 ,  H01L41/187

Abstract: A semiconductor substrate with oxide single crystal heterostructures, to which a sacrificial layer, an epitaxy functional oxide thin film having a perovskite structure and a metal layer are grown on an oxide single crystal substrate, prepared another metal layer on a semiconductor substrate, and bonded the metal layer of the oxide single crystal substrate to the metal layer of the semiconductor substrate to be face each other, and separated the oxide single crystal substrate by selectively etching and removing only the sacrificial layer after the bonding.