公开(公告)号：US20240180041A1

公开(公告)日：2024-05-30

申请号：US18522771

申请日：2023-11-29

Applicant: KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY

Inventor： Seung Hyub BAEK ,  Soo Young JUNG ,  Sunghoon HUR ,  Ji-Soo JANG ,  Jungho YOON ,  Hyun-Cheol SONG ,  Seong Keun KIM ,  Chong Yun KANG ,  Ji-Won CHOI ,  Jin Sang KIM

IPC: H10N30/00 ,  C30B23/04 ,  C30B29/22 ,  H10N30/072 ,  H10N30/082 ,  H10N30/853

CPC classification number: H10N30/10513 ,  C30B23/04 ,  C30B29/22 ,  H10N30/072 ,  H10N30/082 ,  H10N30/8536 ,  H10N30/8548 ,  H10N30/8561

Abstract: The present invention relates to a heterojunction semiconductor substrate having excellent dielectric properties, a method of manufacturing the same, and an electronic device using the same. The present invention provides a heterojunction semiconductor substrate with improved interlayer adhesion, low leakage current, and excellent dielectric properties that maintain strength in a ferroelectric fatigue experiment by interposing a metal layer and a conductive metal oxide layer on a semiconductor substrate to form an epitaxial oxide thin film layer composed of perovskite piezoelectric oxide. The heterojunction semiconductor substrate can be applied to sensors, actuators, transducers, or MEMS devices that use the high functionality of the high-quality epitaxial oxide thin film layer, including applications in electronic and optical devices.