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公开(公告)号：US20240315137A1
公开(公告)日：2024-09-19
申请号：US18673674
申请日：2024-05-24
IPC分类号： H10N30/50 , B06B1/06 , H04R31/00 , H10N30/00 , H10N30/072
CPC分类号： H10N30/50 , B06B1/0622 , H04R31/00 , H10N30/00 , H10N30/072
摘要： The disclosed technology features methods for the manufacture of electrical components such as ultrasound transducers. In particular, the disclosed technology provides methods of patterning electrodes, e.g. in the connection of an ultrasound transducer to an electrical circuit; methods of depositing metal on surfaces; and methods of making integrated matching layers for an ultrasound transducer. The disclosed technology also features ultrasound transducers produced by the methods described herein.
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公开(公告)号：US20240213950A1
公开(公告)日：2024-06-27
申请号：US18526616
申请日：2023-12-01
发明人： Hironori Fukuhara , Rei Goto , Keiichi Maki
CPC分类号： H03H9/02574 , H03H3/10 , H03H9/02031 , H03H9/02559 , H03H9/02834 , H03H9/0585 , H03H9/14502 , H03H9/25 , H03H9/6406 , H03H9/725 , H10N30/072
摘要： An acoustic wave device is disclosed. The acoustic wave device includes a support layer, a ceramic layer positioned over the support layer, a piezoelectric layer positioned over the ceramic layer, and an interdigital transducer electrode positioned over the piezoelectric layer. The support layer has a higher thermal conductivity than the ceramic layer. The ceramic layer can be a polycrystalline spinel layer. The acoustic wave device can be a surface acoustic wave device configured to generate a surface acoustic wave.
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公开(公告)号：US20240188444A1
公开(公告)日：2024-06-06
申请号：US18061839
申请日：2022-12-05
IPC分类号： H10N30/072 , B32B37/00 , B32B37/24 , C30B23/02 , C30B23/06 , C30B29/30 , H10N30/853
CPC分类号： H10N30/072 , B32B37/025 , B32B37/24 , C30B23/025 , C30B23/066 , C30B29/30 , H10N30/8542 , H10N30/076
摘要： A method for transferring a layer of interest from a donor substrate to a receiver substrate includes providing the donor substrate made of a transparent material at a wavelength λ, forming at least one sacrificial buffer layer made of an absorbent sacrificial material at the wavelength λ, on the donor substrate, forming the layer of interest on the at least one sacrificial buffer layer, and bonding the layer of interest on the receiver substrate. The at least one sacrificial buffer layer is illuminated by a laser at the wavelength λ through the donor substrate so as to remove the at least one sacrificial buffer layer to separate the layer of interest from the donor substrate.
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4.发明授权公开(公告)号：US12003227B2
公开(公告)日：2024-06-04
申请号：US17263872
申请日：2019-07-29
申请人： KYOCERA Corporation
发明人： Motohiro Umehara , Kuniaki Mitsuda
IPC分类号： H03H9/02 , H03H3/08 , H10N30/00 , H10N30/072
CPC分类号： H03H9/02574 , H03H3/08 , H03H9/02559 , H10N30/072 , H10N30/10513
摘要： A composite substrate of the present disclosure is a composite substrate comprising a piezoelectric substrate and a sapphire substrate which are directly bonded, wherein the ratio of the number of oxygen atoms to the number of aluminum atoms in the bonding surface region including the bonding surface of the sapphire substrate bonded to the piezoelectric substrate is less than 1.5. The piezoelectric device of the present disclosure comprises the composite substrate. A method for manufacturing the composite substrate of the present disclosure comprises a step of preparing a piezoelectric substrate and a sapphire substrate, a step of heat-treating the sapphire substrate in a reducing atmosphere or in a vacuum, and a step of directly bonding the piezoelectric substrate to the sapphire substrate.
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公开(公告)号：US11876501B2
公开(公告)日：2024-01-16
申请号：US16800248
申请日：2020-02-25
发明人： Hironori Fukuhara , Rei Goto , Keiichi Maki
CPC分类号： H03H9/02574 , H03H3/10 , H03H9/02031 , H03H9/02559 , H03H9/02834 , H03H9/0585 , H03H9/14502 , H03H9/25 , H03H9/6406 , H03H9/725 , H10N30/072
摘要： An acoustic wave device is disclosed. The acoustic wave device includes a support layer, a ceramic layer positioned over the support layer, a piezoelectric layer positioned over the ceramic layer, and an interdigital transducer electrode positioned over the piezoelectric layer. The support layer has a higher thermal conductivity than the ceramic layer. The ceramic layer can be a polycrystalline spinel layer. The acoustic wave device can be a surface acoustic wave device configured to generate a surface acoustic wave.
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公开(公告)号：US20240014027A1
公开(公告)日：2024-01-11
申请号：US18470975
申请日：2023-09-20
申请人： Soitec
发明人： Pascal Guenard , Marcel Broekaart , Thierry Barge
IPC分类号： H01L21/02 , H10N30/50 , H10N30/072 , H10N30/853
CPC分类号： H01L21/02002 , H10N30/50 , H10N30/072 , H10N30/8542 , H01L21/02367 , H01L21/02436 , H03H9/02574
摘要： A method for manufacturing a substrate includes the following steps: (a) providing a support substrate with a first coefficient of thermal expansion, having on one of its faces a first plurality of trenches parallel to each other in a first direction, and a second plurality of trenches parallel to each other in a second direction; (b) transferring a useful layer from a donor substrate to the support substrate, the useful layer having a second coefficient of thermal expansion; wherein an intermediate layer is inserted between the front face of the support substrate and the useful layer, the intermediate layer having a coefficient of thermal expansion between the first and second coefficients of thermal expansion.
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7.发明公开公开(公告)号：US20230353115A1
公开(公告)日：2023-11-02
申请号：US18348940
申请日：2023-07-07
申请人： Soitec
IPC分类号： H03H3/10 , H10N30/072 , H10N30/853
CPC分类号： H03H3/10 , H10N30/072 , H10N30/8536 , H10N30/8542 , H10N30/8548 , H10N30/8554
摘要： A process for transferring a thin layer consisting of a first material to a support substrate consisting of a second material having a different thermal expansion coefficient, comprises providing a donor substrate composed of an assembly of a thick layer formed of the first material and of a handle substrate having a thermal expansion coefficient similar to that of the support substrate, and the donor substrate having a main face on the side of the thick laver; introducing light species into the thick layer to generate a plane of weakness therein and to define the thin layer between the plane of weakness and the main face of the donor substrate; assembling the main face of the donor substrate with a face of the support substrate; and detachment of the thin layer at the plane of weakness, the detachment comprising application of a heat treatment.
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8.发明授权公开(公告)号：US11800805B2
公开(公告)日：2023-10-24
申请号：US16348344
申请日：2017-10-10
发明人： Shoji Akiyama , Masayuki Tanno
IPC分类号： H03H9/02 , H10N30/00 , H03H3/08 , H03H9/25 , H10N30/072 , H10N30/079 , H10N30/086
CPC分类号： H10N30/10516 , H03H3/08 , H03H9/02559 , H03H9/02834 , H03H9/02897 , H03H9/25 , H10N30/072 , H10N30/079 , H10N30/086
摘要： There are provided a method for manufacturing a substrate excellent in heat dissipation with a small loss in radio frequencies with no need of a high temperature process in which a metal impurity is diffused, and a substrate of high thermal conductivity. A composite substrate according to the present invention is a composite substrate having a piezoelectric single crystal substrate, a support substrate, and an intermediate layer provided between the piezoelectric single crystal substrate and the support substrate. The intermediate layer is a film formed of an inorganic material, and at least a part of the film is thermally synthesized silica. The intermediate layer may be separated into at least two layers along the bonding surface of the composite substrate. The first intermediate layer in contact with the support substrate may be a layer including thermally synthesized silica.
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公开(公告)号：US20230225212A1
公开(公告)日：2023-07-13
申请号：US18069141
申请日：2022-12-20
发明人： Rei Goto , Hironori Fukuhara
IPC分类号： H10N30/072 , H03H3/08 , H03H9/02 , H03H9/64
CPC分类号： H10N30/072 , H03H3/08 , H03H9/02574 , H03H9/64
摘要： A method of making an electronics package with a multi-layer piezoelectric substrate includes bonding a piezoelectric layer over a substrate. The method also includes applying a polyimide layer over an outer boundary of the piezoelectric layer so that the polyimide layer is interposed between the piezoelectric layer and a metal portion (e.g., of copper (Cu)) to inhibit (e.g., prevent) stresses from the metal layer damaging the piezoelectric layer.
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公开(公告)号：US20230217832A1
公开(公告)日：2023-07-06
申请号：US18179071
申请日：2023-03-06
申请人： Soitec
发明人： Bruno Ghyselen , Ionut Radu , Jean-Marc Bethoux
IPC分类号： H10N30/853 , C30B25/18 , C30B29/22 , H10N30/20 , H10N30/072 , H10N30/079 , H10N30/085 , H10N30/00 , H03H3/02 , H03H3/08 , H03H9/25 , H03H9/54 , H03H9/64
CPC分类号： H10N30/8542 , C30B25/186 , C30B29/22 , H10N30/20 , H10N30/072 , H10N30/079 , H10N30/085 , H10N30/10516 , H03H3/02 , H03H3/08 , H03H9/25 , H03H9/54 , H03H9/64 , C30B29/30
摘要： A composite substrate includes a final substrate, and a piezoelectric material directly molecularly bonded to the final substrate at a first interface. The piezoelectric material comprises an epitaxial layer, but does not comprise a seed layer. Additional composite substrates include a final substrate, and a piezoelectric material directly molecularly bonded to the final substrate at a first interface. The piezoelectric material comprises an epitaxial layer. The composite substrate further includes a seed layer on which the piezoelectric material has been epitaxially grown. The seed layer is disposed on a side of the epitaxial layer opposite the final substrate. An acoustic wave device comprises such a composite substrate with at least one electrode on a surface of the piezoelectric layer opposite the substrate.
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