公开(公告)号：US20180130947A1

公开(公告)日：2018-05-10

申请号：US15407357

申请日：2017-01-17

Applicant: KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY

Inventor： Jong Hyuk PARK ,  Sang-Soo LEE ,  Keun-Young SHIN ,  Young Jin KIM ,  Min PARK ,  Heesuk KIM ,  Jeong Gon SON ,  Wan Ki BAE

IPC: H01L45/00

CPC classification number: H01L45/1253 ,  G11C11/5685 ,  G11C13/0002 ,  G11C13/0007 ,  G11C13/0016 ,  G11C13/003 ,  G11C13/004 ,  G11C13/0069 ,  G11C2013/0073 ,  G11C2213/52 ,  G11C2213/71 ,  G11C2213/77 ,  H01L27/11 ,  H01L27/2463 ,  H01L45/1233 ,  H01L45/1273 ,  H01L45/16 ,  H01L45/1675

Abstract: Disclosed is a multilevel nonvolatile resistive random-access memory device including a lower electrode, an upper electrode, and an insulation film interposed between the lower electrode and the upper electrode. Each of the lower electrode and the upper electrode includes a plate-shaped portion, and a patterned portion formed on the plate-shaped portion, and the patterned portion includes a protruding 3-dimensional prism structure pattern in which a plurality of prism-shaped structures is repeatedly arranged at a constant interval in a given direction. The patterned portion of the lower electrode and the patterned portion of the upper electrode are arranged to face each other, and a longitudinal direction of the prism-shaped structures of the lower electrode patterned portion and a longitudinal direction of the prism-shaped structures of the upper electrode patterned portion cross each other.

公开(公告)号：US20190035853A1

公开(公告)日：2019-01-31

申请号：US15817644

申请日：2017-11-20

Applicant: KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY

Inventor： Sang-Soo LEE ,  Jong Hyuk PARK ,  Jeong Gon SON ,  Minsung KIM ,  Young Jin KIM ,  Heesuk KIM

IPC: H01L27/24 ,  G11C13/00 ,  H01L45/00

Abstract: A resistance-switchable material containing: an insulating support; and a complementary resistance switchable filler dispersed in the insulating support, wherein the complementary resistance switchable filler has a spherical core-shell structure containing: a spherical conductive core containing a conductive material; and an insulating shell formed on the surface of the core and containing an insulating material. The resistance-switchable material is capable of exhibiting complementary resistive switching characteristics with improved reliability and stability as symmetrical uniform filament current paths are formed in respective resistive layers adjacent to two electrodes with the conductive core of the complementary resistance-switchable filler at the center due to the electric field control effect by the spherical complementary resistance-switchable filler

公开(公告)号：US20170155044A1

公开(公告)日：2017-06-01

申请号：US15229449

申请日：2016-08-05

Applicant: KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY

Inventor： Jong Hyuk PARK ,  Sang-Soo LEE ,  Heesuk KIM ,  Jeong Gon SON ,  Wan Ki BAE ,  Keun-Young SHIN ,  Young Jin KIM

IPC: H01L45/00

CPC classification number: H01L45/16 ,  H01L45/04 ,  H01L45/1233 ,  H01L45/1273 ,  H01L45/146 ,  H01L45/1616 ,  H01L45/1625

Abstract: Disclosed are nonvolatile resistance random access memory device and a fabrication method thereof. The nonvolatile resistance random access memory device includes a lower electrode, an insulator film formed on a surface of the lower electrode, and an upper electrode formed over the insulator film, the lower electrode includes a base, and a thin metal layer formed on a surface of the base, and the lower electrode has a 3D structural pattern in which a plurality of protruding structures is repeatedly arranged at a constant interval. The 3D metal structures have a shape selected from among a pyramid (quadrangular pyramid), a trapezoidal pyramid (pyramid with a flat top), a pillar, and a prism. Uniform conductive filaments are formed via the space between the 3D metal structures, whereby the nonvolatile resistance random access memory device is capable of being driven at a low operating voltage and has long-term stability.