公开(公告)号：US06624987B1

公开(公告)日：2003-09-23

申请号：US09583917

申请日：2000-05-31

申请人： Kazuhiko Hayashi ,  Keishi Ohashi ,  Nobuyuki Ishiwata ,  Masafumi Nakada ,  Eizo Fukami ,  Kiyokazu Nagahara ,  Hiroaki Honjou ,  Shinsaku Saitoh

发明人： Kazuhiko Hayashi ,  Keishi Ohashi ,  Nobuyuki Ishiwata ,  Masafumi Nakada ,  Eizo Fukami ,  Kiyokazu Nagahara ,  Hiroaki Honjou ,  Shinsaku Saitoh

IPC分类号： G11B5127

CPC分类号： B82Y10/00 ,  B82Y25/00 ,  B82Y40/00 ,  G11B5/00 ,  G11B5/012 ,  G11B5/3903 ,  G11B5/3909 ,  H01F10/3254 ,  H01F41/308 ,  Y10T29/49034

摘要： A magnetoresistive effect head which is easy to manufacture and in which a sense current is prevented from bypassing a barrier layer is provided. Also provided are a method for manufacturing the head and a magnetic recording apparatus utilizing the head. This magnetoresistive effect head utilizes an MTJ film which comprises, for forming its basic structure, a free layer, a barrier layer, a pinned layer and a pinning layer, wherein an oxide or a nitride layer is formed by oxidizing or nitriding metallic materials constituting the pinned layer and pinning layer.

摘要翻译： 提供易于制造并且防止感测电流绕过阻挡层的磁阻效应头。 还提供了一种用于制造磁头的方法和利用磁头的磁记录装置。 该磁阻效应头利用MTJ膜，其包括用于形成其基本结构的自由层，阻挡层，被钉扎层和钉扎层，其中通过氧化或氮化金属材料形成氧化物或氮化物层， 钉扎层和钉扎层。

公开(公告)号：US06798626B2

公开(公告)日：2004-09-28

申请号：US10356522

申请日：2003-02-03

申请人： Kazuhiko Hayashi ,  Keishi Ohashi ,  Nobuyuki Ishiwata ,  Masafumi Nakada ,  Eizo Fukami ,  Kiyokazu Nagahara ,  Hiroaki Honjou ,  Shinsaku Saitoh

发明人： Kazuhiko Hayashi ,  Keishi Ohashi ,  Nobuyuki Ishiwata ,  Masafumi Nakada ,  Eizo Fukami ,  Kiyokazu Nagahara ,  Hiroaki Honjou ,  Shinsaku Saitoh

IPC分类号： G11B533

CPC分类号： B82Y10/00 ,  B82Y25/00 ,  B82Y40/00 ,  G11B5/00 ,  G11B5/012 ,  G11B5/3903 ,  G11B5/3909 ,  H01F10/3254 ,  H01F41/308 ,  Y10T29/49034

摘要： A magnetoresistive effect element which is easy to manufacture and in which a sense current is prevented from bypassing a barrier layer is provided. Also provided are a method for manufacturing the element and a magnetic recording apparatus utilizing the element. This magnetoresistive effect element utilizes an MTJ film which comprises, for forming its basic structure, a free layer, a barrier layer, a pinned layer and a pinning layer, wherein an oxide or a nitride layer is formed by oxidizing or nitriding metallic materials constituting the pinned layer and pinning layer.

摘要翻译： 提供易于制造并且防止感测电流绕过阻挡层的磁阻效应元件。 还提供了用于制造元件的方法和利用该元件的磁记录装置。 该磁阻效应元件利用MTJ膜，其包括用于形成其基本结构的自由层，阻挡层，被钉扎层和钉扎层，其中通过氧化或氮化金属材料形成氧化物或氮化物层， 钉扎层和钉扎层。

公开(公告)号：US06718621B1

公开(公告)日：2004-04-13

申请号：US09566971

申请日：2000-05-09

申请人： Kazuhiko Hayashi ,  Keishi Ohashi ,  Nobuyuki Ishiwata ,  Masafumi Nakada ,  Eizo Fukami ,  Kiyokazu Nagahara ,  Hiroaki Honjo ,  Shinsaku Saitoh

发明人： Kazuhiko Hayashi ,  Keishi Ohashi ,  Nobuyuki Ishiwata ,  Masafumi Nakada ,  Eizo Fukami ,  Kiyokazu Nagahara ,  Hiroaki Honjo ,  Shinsaku Saitoh

IPC分类号： G11B5127

CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G11B5/313 ,  G11B5/3163 ,  G11B5/3169 ,  G11B5/3903 ,  G11B5/3909 ,  G11B5/40 ,  Y10T29/49034 ,  Y10T29/49036 ,  Y10T29/49041 ,  Y10T29/49046 ,  Y10T29/49048

摘要： In a production process of an MR head using the tunnel junction film basically consisting of a free layer, a barrier layer, and a pinned layer, the resistance between the free layer and the pined layer reduced beforehand and increased afterward up to a resistance value necessary when actually used. While the resistance between the free layer and the pinned layer is low, current can easily flow, suppressing charge up, thus preventing insulation destruction of the barrier layer. This significantly increases a production yield of a recording/reproduction head using a ferromagnetic tunnel junction element.

摘要翻译： 在使用基本上由自由层，阻挡层和钉扎层组成的隧道结膜的MR头的制造过程中，自由层和填充层之间的电阻预先减小并且随后增加到必要的电阻值 当实际使用。 虽然自由层和被钉扎层之间的电阻低，但是电流可以容易地流动，从而抑制充电，从而防止阻挡层的绝缘破坏。 这显着地增加了使用铁磁隧道连接元件的记录/再现头的产量。

公开(公告)号：US06903908B2

公开(公告)日：2005-06-07

申请号：US09853622

申请日：2001-05-14

申请人： Kazuhiko Hayashi ,  Keishi Ohashi ,  Nobuyuki Ishiwata ,  Masafumi Nakada ,  Eizo Fukami ,  Kiyokazu Nagahara ,  Hiroaki Honjo ,  Junichi Fujikata ,  Kunihiko Ishihara ,  Shigeru Mori

发明人： Kazuhiko Hayashi ,  Keishi Ohashi ,  Nobuyuki Ishiwata ,  Masafumi Nakada ,  Eizo Fukami ,  Kiyokazu Nagahara ,  Hiroaki Honjo ,  Junichi Fujikata ,  Kunihiko Ishihara ,  Shigeru Mori

IPC分类号： G01R33/02 ,  G01R31/317 ,  G01R33/09 ,  G11B5/00 ,  G11B5/39 ,  G11B5/40 ,  H01F10/16 ,  H01F10/32 ,  H01L43/08 ,  H01L43/12 ,  G11B5/11

CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G01R31/3171 ,  G01R33/093 ,  G11B5/00 ,  G11B5/3903 ,  G11B5/3909 ,  G11B5/40 ,  G11B2005/3996

摘要： A magnetoresistive effect sensor uses a shielded-type magnetoresistive effect element using a magnetoresistive effect film formed by a basic configuration of a combination of a free layer, a barrier layer formed on the free layer, and a fixed layer formed on the barrier layer, wherein a sensing current flows substantially perpendicular to the magnetoresistive effect film, and wherein an amorphous material or a microcrystalline material is used in a lower shield.

摘要翻译： 磁阻效应传感器使用屏蔽型磁阻效应元件，其使用由自由层，形成在自由层上的阻挡层和形成在阻挡层上的固定层的组合的基本结构形成的磁阻效应膜，其中 感测电流基本上垂直于磁阻效应膜流动，并且其中在下屏蔽中使用无定形材料或微晶材料。

公开(公告)号：US06493195B1

公开(公告)日：2002-12-10

申请号：US09651068

申请日：2000-08-30

申请人： Kazuhiko Hayashi ,  Keishi Ohashi ,  Nobuyuki Ishiwata ,  Masafumi Nakada ,  Eizo Fukami ,  Hiroaki Honjo ,  Hisanao Tsuge ,  Atsushi Kamijo

发明人： Kazuhiko Hayashi ,  Keishi Ohashi ,  Nobuyuki Ishiwata ,  Masafumi Nakada ,  Eizo Fukami ,  Hiroaki Honjo ,  Hisanao Tsuge ,  Atsushi Kamijo

IPC分类号： G11B5127

CPC分类号： B82Y25/00 ,  B82Y10/00 ,  B82Y40/00 ,  G01R33/09 ,  G11B5/3133 ,  G11B5/3163 ,  G11B5/3903 ,  G11B5/3909 ,  G11B5/40 ,  H01F10/3268 ,  H01F41/302

摘要： A magnetoresistance element includes a lower electrode layer, a magnetoresistance effect layer, an upper electrode layer and a lower electrode anti-erosion/flaking layer. The lower electrode anti-erosion/flaking layer, which is formed before a photoresist layer remaining on the patterned lower electrode layer is removed, is formed around the lower electrode layer so that its edge facing the lower electrode layer will be in contact with the edge of the lower electrode layer. By use of the lower electrode anti-erosion/flaking layer, the edge of the lower electrode layer is protected from being exposed to a release agent containing a dissolved photoresist in a photoresist layer removal step (when the photoresist layer remaining on the patterned lower electrode layer is removed), thereby the increase of roughness of the edge of the lower electrode layer due to erosion/flaking of the edge in the photoresist removal step can be avoided, and thereby electrical shorts between the upper electrode layer and the lower electrode layer can be eliminated, and thereby a magnetoresistance element of high sensitivity and high performance can be obtained and manufacturing yield of the magnetoresistance elements can be improved.

摘要翻译： 磁阻元件包括下电极层，磁阻效应层，上电极层和下电极抗侵蚀/剥落层。 在除去形成在图案化的下电极层上的光致抗蚀剂层之前形成的下电极抗腐蚀/剥离层围绕下电极层形成，使得其面向下电极层的边缘将与边缘 的下电极层。 通过使用下电极抗腐蚀/剥落层，在光致抗蚀剂层去除步骤中（当残留在图案化的下电极上的光致抗蚀剂层时，保护下电极层的边缘不暴露于含有溶解的光致抗蚀剂的脱模剂 层），由此可以避免由于光致抗蚀剂去除步骤中的边缘的侵蚀/剥落引起的下电极层的边缘的粗糙度的增加，从而可以使上电极层和下电极层之间的电短路 从而可以获得高灵敏度和高性能的磁阻元件，并且可以提高磁阻元件的制造成品率。

公开(公告)号：US07161774B2

公开(公告)日：2007-01-09

申请号：US11376290

申请日：2006-03-16

申请人： Kazuhiko Hayashi ,  Junichi Fujikata ,  Tsutomu Ishi ,  Shigeru Mori ,  Keishi Ohashi ,  Masafumi Nakada ,  Kiyokazu Nagahara ,  Kunihiko Ishihara ,  Nobuyuki Ishiwata

发明人： Kazuhiko Hayashi ,  Junichi Fujikata ,  Tsutomu Ishi ,  Shigeru Mori ,  Keishi Ohashi ,  Masafumi Nakada ,  Kiyokazu Nagahara ,  Kunihiko Ishihara ,  Nobuyuki Ishiwata

IPC分类号： G11B5/39

CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G01R31/3171 ,  G01R33/093 ,  G11B5/00 ,  G11B5/39 ,  G11B5/3903 ,  G11B5/3909 ,  G11B5/3932 ,  G11B5/3967 ,  H01F10/3268

摘要： A magneto-resistance effect head is provided with a lower conductive layer which is provided with a recessed portion, and a vertical bias layer is provided in the recessed portion. A free layer is provided on the lower conductive layer. On the free layer, layered in the following order are the non-magnetic layer, the fixed layer, the fixing layer, and the upper layer so as not to be placed immediately above the vertical bias layer. The non-magnetic layer, the fixed layer, the fixing layer, and the upper layer are buried in an insulation layer. Furthermore, an upper conductive layer is provided on the upper layer and the insulation layer. In the direction of the magnetic field applied by the vertical bias layer, the free layer is made greater in length than the fixed layer and the free layer is disposed in proximity to the vertical bias layer with the distance between the fixed layer and the vertical bias layer remaining unchanged.

公开(公告)号：US06999287B2

公开(公告)日：2006-02-14

申请号：US10803144

申请日：2004-03-18

申请人： Kazuhiko Hayashi ,  Junichi Fujikata ,  Tsutomu Ishi ,  Shigeru Mori ,  Keishi Ohashi ,  Masafumi Nakada ,  Kiyokazu Nagahara ,  Kunihiko Ishihara ,  Nobuyuki Ishiwata

发明人： Kazuhiko Hayashi ,  Junichi Fujikata ,  Tsutomu Ishi ,  Shigeru Mori ,  Keishi Ohashi ,  Masafumi Nakada ,  Kiyokazu Nagahara ,  Kunihiko Ishihara ,  Nobuyuki Ishiwata

IPC分类号： G11B5/39

CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G01R31/3171 ,  G01R33/093 ,  G11B5/00 ,  G11B5/39 ,  G11B5/3903 ,  G11B5/3909 ,  G11B5/3932 ,  G11B5/3967 ,  H01F10/3268

摘要： A magneto-resistance effect head is provided with a lower conductive layer which is provided with a recessed portion, and a vertical bias layer is provided in the recessed portion. A free layer is provided on the lower conductive layer. On the free layer, layered in the following order are the non-magnetic layer, the fixed layer, the fixing layer, and the upper layer so as not to be placed immediately above the vertical bias layer. The non-magnetic layer, the fixed layer, the fixing layer, and the upper layer are buried in an insulation layer. Furthermore, an upper conductive layer is provided on the upper layer and the insulation layer. In the direction of the magnetic field applied by the vertical bias layer, the free layer is made greater in length than the fixed layer and the free layer is disposed in proximity to the vertical bias layer with the distance between the fixed layer and the vertical bias layer remaining unchanged.

公开(公告)号：US06934132B2

公开(公告)日：2005-08-23

申请号：US09916529

申请日：2001-07-30

申请人： Kazuhiko Hayashi ,  Junichi Fujikata ,  Tsutomu Ishi ,  Shigeru Mori ,  Keishi Ohashi ,  Masafumi Nakada ,  Kiyokazu Nagahara ,  Kunihiko Ishihara ,  Nobuyuki Ishiwata

发明人： Kazuhiko Hayashi ,  Junichi Fujikata ,  Tsutomu Ishi ,  Shigeru Mori ,  Keishi Ohashi ,  Masafumi Nakada ,  Kiyokazu Nagahara ,  Kunihiko Ishihara ,  Nobuyuki Ishiwata

IPC分类号： G01R31/317 ,  G01R33/09 ,  G11B5/00 ,  G11B5/39 ,  H01F10/32

CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G01R31/3171 ,  G01R33/093 ,  G11B5/00 ,  G11B5/39 ,  G11B5/3903 ,  G11B5/3909 ,  G11B5/3932 ,  G11B5/3967 ,  H01F10/3268

摘要： A magneto-resistance effect head is provided with a lower conductive layer which is provided with a recessed portion, and a vertical bias layer is provided in the recessed portion. A free layer is provided on the lower conductive layer. On the free layer, layered in the following order are the non-magnetic layer, the fixed layer, the fixing layer, and the upper layer so as not to be placed inmediately above the vertical bias layer. The non-magnetic layer, the fixed layer, the fixing layer, and the upper layer are buried in an insulation layer. Furthermore, an upper conductive layer is provided on the upper layer and the insulation layer. In the direction of the magnetic field applied by the vertical bias layer, the free layer is made greater in length than the fixed layer and the free layer is disposed in proximity to the vertical bias layer with the distance between the fixed layer and the vertical bias layer remaining unchanged.

摘要翻译： 磁阻效应头设置有设置有凹部的下导电层，在凹部设置有垂直偏置层。 在下导电层上提供自由层。 在自由层上，按照以下顺序层叠非磁性层，固定层，固定层和上层，以便不立即放置在垂直偏置层上方。 非磁性层，固定层，固定层和上层被埋在绝缘层中。 此外，在上层和绝缘层上设置有上导电层。 在由垂直偏置层施加的磁场的方向上，自由层的长度比固定层长，并且自由层设置在垂直偏置层附近，固定层和垂直偏置之间的距离 层保持不变。

公开(公告)号：US20060274456A1

公开(公告)日：2006-12-07

申请号：US11477402

申请日：2006-06-30

申请人： Kazuhiko Hayashi ,  Junichi Fujikata ,  Tsutomu Ishi ,  Shigeru Mori ,  Keishi Ohashi ,  Masafumi Nakada ,  Kiyokazu Nagahara ,  Kunihiko Ishihara ,  Nobuyuki Ishiwata

发明人： Kazuhiko Hayashi ,  Junichi Fujikata ,  Tsutomu Ishi ,  Shigeru Mori ,  Keishi Ohashi ,  Masafumi Nakada ,  Kiyokazu Nagahara ,  Kunihiko Ishihara ,  Nobuyuki Ishiwata

IPC分类号： G11B5/33

CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G01R31/3171 ,  G01R33/093 ,  G11B5/00 ,  G11B5/39 ,  G11B5/3903 ,  G11B5/3909 ,  G11B5/3932 ,  G11B5/3967 ,  H01F10/3268

摘要： A magneto-resistance effect head is provided with a lower conductive layer which is provided with a recessed portion, and a vertical bias layer is provided in the recessed portion. A free layer is provided on the lower conductive layer. On the free layer, layered in the following order are the non-magnetic layer, the fixed layer, the fixing layer, and the upper layer so as not to be placed immediately above the vertical bias layer. The non-magnetic layer, the fixed layer, the fixing layer, and the upper layer are buried in an insulation layer. Furthermore, an upper conductive layer is provided on the upper layer and the insulation layer. In the direction of the magnetic field applied by the vertical bias layer, the free layer is made greater in length than the fixed layer and the free layer is disposed in proximity to the vertical bias layer with the distance between the fixed layer and the vertical bias layer remaining unchanged.

公开(公告)号：US20060232894A1

公开(公告)日：2006-10-19

申请号：US11376290

申请日：2006-03-16

申请人： Kazuhiko Hayashi ,  Junichi Fujikata ,  Tsutomu Ishi ,  Shigeru Mori ,  Keishi Ohashi ,  Masafumi Nakada ,  Kiyokazu Nagahara ,  Kunihiko Ishihara ,  Nobuyuki Ishiwata

发明人： Kazuhiko Hayashi ,  Junichi Fujikata ,  Tsutomu Ishi ,  Shigeru Mori ,  Keishi Ohashi ,  Masafumi Nakada ,  Kiyokazu Nagahara ,  Kunihiko Ishihara ,  Nobuyuki Ishiwata

IPC分类号： G11B5/127 ,  G11B5/33

CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G01R31/3171 ,  G01R33/093 ,  G11B5/00 ,  G11B5/39 ,  G11B5/3903 ,  G11B5/3909 ,  G11B5/3932 ,  G11B5/3967 ,  H01F10/3268

摘要： A magneto-resistance effect head is provided with a lower conductive layer which is provided with a recessed portion, and a vertical bias layer is provided in the recessed portion. A free layer is provided on the lower conductive layer. On the free layer, layered in the following order are the non-magnetic layer, the fixed layer, the fixing layer, and the upper layer so as not to be placed immediately above the vertical bias layer. The non-magnetic layer, the fixed layer, the fixing layer, and the upper layer are buried in an insulation layer. Furthermore, an upper conductive layer is provided on the upper layer and the insulation layer. In the direction of the magnetic field applied by the vertical bias layer, the free layer is made greater in length than the fixed layer and the free layer is disposed in proximity to the vertical bias layer with the distance between the fixed layer and the vertical bias layer remaining unchanged.