公开(公告)号：US20080305442A1

公开(公告)日：2008-12-11

申请号：US11806959

申请日：2007-06-05

申请人： Kazuki Sato ,  Akifumi Kamijima ,  Takayasu Kanaya ,  Kei Hirata

发明人： Kazuki Sato ,  Akifumi Kamijima ,  Takayasu Kanaya ,  Kei Hirata

IPC分类号： G03C5/00

CPC分类号： H01L29/82 ,  B82Y25/00 ,  G01R33/093 ,  G11B5/1278 ,  G11B5/3163 ,  G11B5/3967 ,  H01F41/34 ,  H01L21/0331 ,  H01L43/12

摘要： A formation method for a patterned material layer comprising a step of exposing a composite layer to light in a predetermined pattern, the composite layer including a first photosensitive resin layer, a protective film, and an upper resin layer; a step of partly removing the exposed composite layer so as to form an opening exposing the substrate and form a groove along the main surface of the substrate on a side face of the opening by depressing the end portion of the upper resin layer on the substrate side, thereby forming a resist frame comprising the composite layer formed with the opening; a step of forming a vacuum coated layer having a material pattern part formed on the substrate in the opening and a part to lift off formed on the resist frame, by vacuum coating process; and a step of removing the part to lift off together with the resist frame, so as to yield a patterned material layer.

摘要翻译： 一种图案化材料层的形成方法，包括将复合层以预定图案曝光的步骤，所述复合层包括第一感光树脂层，保护膜和上树脂层; 一部分去除露出的复合层以形成露出基板的开口，并通过在基板侧压下上树脂层的端部，沿着开口的侧面沿基板的主表面形成凹槽 从而形成包括形成有开口的复合层的抗蚀剂框架; 通过真空镀膜工艺形成真空涂层的步骤，该真空涂层具有形成在开口中的基板上的材料图案部分和形成在抗蚀框架上的部分; 以及除去该部分以与抗蚀剂框架一起剥离的步骤，以产生图案化的材料层。

公开(公告)号：US08427790B2

公开(公告)日：2013-04-23

申请号：US12216162

申请日：2008-06-30

申请人： Kei Hirata ,  Kazuki Sato ,  Yohei Koyanagi ,  Takayasu Kanaya ,  Takeo Kagami

发明人： Kei Hirata ,  Kazuki Sato ,  Yohei Koyanagi ,  Takayasu Kanaya ,  Takeo Kagami

IPC分类号： G11B5/39

CPC分类号： G11B5/398 ,  G11B5/3166 ,  G11B5/3169 ,  G11B5/3173 ,  G11B5/3932

摘要： A thin film magnetic head includes a magnetoresistive element having a recording-medium-facing-surface which is to be faced with a magnetic recording medium; a magnetic bias layer located on a side opposite to the recording-medium-facing-surface of the magnetoresistive element, and applying a bias magnetic field to the magnetoresistive element in a direction orthogonal to the recording-medium-facing-surface; and a resistive film pattern having the recording-medium-facing-surface, the resistive film pattern being located side by side with the magnetoresistive element in a track-width direction.

摘要翻译： 薄膜磁头包括具有面向磁记录介质的记录介质面对表面的磁阻元件; 位于与所述磁阻元件的记录介质相对表面相对的一侧的磁偏置层，并且在与所述记录介质相对表面正交的方向上向所述磁阻元件施加偏置磁场; 以及具有记录介质面向表面的电阻膜图案，电阻膜图案与磁阻元件沿轨道宽度方向并排定位。

公开(公告)号：US20090323222A1

公开(公告)日：2009-12-31

申请号：US12216162

申请日：2008-06-30

申请人： Kei Hirata ,  Kazuki Sato ,  Yohei Koyanagi ,  Takayasu Kanaya ,  Takeo Kagami

发明人： Kei Hirata ,  Kazuki Sato ,  Yohei Koyanagi ,  Takayasu Kanaya ,  Takeo Kagami

IPC分类号： G11B5/48 ,  G11B5/33

CPC分类号： G11B5/398 ,  G11B5/3166 ,  G11B5/3169 ,  G11B5/3173 ,  G11B5/3932

摘要： In manufacturing the thin film magnetic head, the rear end face of the MR element and the rear end face of a resistive film pattern are determined with high precision using a mask pattern, in which a first opening and a second opening are collectively formed. The first and second openings are located side by side in a track-width direction. The first opening includes a first edge extending across the MR film in the track-width direction, and the second opening includes a second edge located at a given interval, as measured in a direction orthogonal to the track-width direction, from the first edge, and extending in the track-width direction. In the step of polishing for forming a magnetic-recording-medium-facing-surface, the amount of polishing is determined by monitoring the resistance change of the resistive film pattern, thereby reducing the dimension errors in the MR height when manufacturing the MR element.

摘要翻译： 在制造薄膜磁头时，使用其中共同形成第一开口和第二开口的掩模图案，以高精度确定MR元件的后端面和电阻膜图案的后端面。 第一和第二开口沿着轨道宽度方向并排设置。 第一开口包括在轨道宽度方向上跨过MR膜延伸的第一边缘，并且第二开口包括位于沿与轨道宽度方向正交的方向上测量的给定间隔的第二边缘，从第一边缘 并沿轨道宽度方向延伸。 在用于形成面向磁记录介质的表面的抛光步骤中，通过监视电阻膜图案的电阻变化来确定抛光量，从而在制造MR元件时减小MR高度的尺寸误差。

公开(公告)号：US20100053819A1

公开(公告)日：2010-03-04

申请号：US12230781

申请日：2008-09-04

申请人： Kei Hirata ,  Takayasu Kanaya ,  Kosuke Tanaka ,  Shinji Hara

发明人： Kei Hirata ,  Takayasu Kanaya ,  Kosuke Tanaka ,  Shinji Hara

IPC分类号： G11B5/33

CPC分类号： B82Y10/00 ,  B82Y25/00 ,  G11B5/3909 ,  G11B5/3912 ,  G11B5/3932 ,  G11B2005/3996

摘要： The invention is devised to provide a method of manufacturing a thin film magnetic head including a magnetoresistive element having higher reading performance. In manufacturing the thin film magnetic head, after forming an MR element 15, a pair of magnetic domain controlling layers 16 are formed by stacking a buffer layer 161, a magnetic bias layer 162 and a cap layer 163 in this order on both sides, in a track-width direction, of the MR element 15 via an insulating layer 14 respectively. Then, a cap layer 17 is formed so as to cover the upper surface of the MR element 15 and connect the pair of cap-layers 163. After that, a gap adjustment layer 18 and a top shielding layer 19 are formed in order so as to cover the pair of cap layers 163 and the cap layer 17, thereby a read head section 10 is completed. In this manner, the upper surface of the magnetic bias layer 162 is in contact only with the cap-layer 17 and the cap-layer 163, which are made of a material excellent in crystal lattice compatibility with the magnetic bias layer 162. As a result, the coercive force of the magnetic bias layer 162 can be increased. What is more, roughness of the undersurface of the top shielding layer 19 can be improved because of the presence of the cap layer 17.

摘要翻译： 本发明旨在提供一种制造包括具有更高读取性能的磁阻元件的薄膜磁头的方法。 在制造薄膜磁头时，在形成MR元件15之后，通过在两侧依次层叠缓冲层161，磁偏置层162和盖层163，形成一对磁畴控制层16 分别经由绝缘层14的MR元件15的轨道宽度方向。 然后，形成盖层17，以覆盖MR元件15的上表面并连接一对盖层163.之后，依次形成间隙调整层18和顶部屏蔽层19，以便 覆盖一对盖层163和盖层17，从而完成读头部10。 以这种方式，磁偏置层162的上表面仅与盖层17和盖层163接触，盖层17和盖层163由与磁偏置层162的晶格相容性优异的材料制成。作为 结果，可以增加磁偏置层162的矫顽力。 此外，由于存在盖层17，所以可以提高顶部屏蔽层19的下表面的粗糙度。

公开(公告)号：US08295015B2

公开(公告)日：2012-10-23

申请号：US12320878

申请日：2009-02-06

申请人： Naoki Ohta ,  Hiroshi Yamazaki ,  Kosuke Tanaka ,  Takayasu Kanaya ,  Kei Hirata

发明人： Naoki Ohta ,  Hiroshi Yamazaki ,  Kosuke Tanaka ,  Takayasu Kanaya ,  Kei Hirata

IPC分类号： G11B5/39

CPC分类号： G11B5/3932 ,  G01R33/098

摘要： The invention is devised to provide a magnetoresistive element that is hardly susceptible to harmful influence of unnecessary magnetic fields and noise of heat even when reduction in size is achieved to be adaptable to higher recording density, and therefore that is excellent in operational reliability. The magnetoresistive element includes a stacked structure including, in order: a magnetically pinned layer whose magnetization direction is fixed in a given direction; a non-magnetic layer; a magnetically free layer whose magnetization direction changes according to an external magnetic field; and an antiferromagnetic bias layer exchange-coupled with the magnetically free layer. The exchange-coupling magnetic field between the magnetically free layer and the antiferromagnetic bias layer is smaller than a saturation magnetic field of the magnetically free layer.

摘要翻译： 本发明的目的在于提供一种磁阻元件，即使实现了适应于较高记录密度的尺寸减小，几乎不易受不必要的磁场的有害影响和热噪声的影响，因此具有优异的操作可靠性。 磁阻元件包括层叠结构，其顺序包括：磁性固定层，其磁化方向在给定方向上固定; 非磁性层; 磁化方向根据外部磁场而变化的无磁性层; 和与磁性层交换耦合的反铁磁偏置层。 磁性层和反铁磁偏置层之间的交换耦合磁场小于无磁层的饱和磁场。

公开(公告)号：US08009392B2

公开(公告)日：2011-08-30

申请号：US12318924

申请日：2009-01-13

申请人： Takayasu Kanaya ,  Kei Hirata ,  Yohei Koyanagi ,  Seiichi Takayama ,  Shinji Hara ,  Toshiyuki Ayukawa

发明人： Takayasu Kanaya ,  Kei Hirata ,  Yohei Koyanagi ,  Seiichi Takayama ,  Shinji Hara ,  Toshiyuki Ayukawa

IPC分类号： G11B5/33 ,  G11B5/48 ,  G11B5/60

CPC分类号： G11B5/3932 ,  G01R33/098

摘要： Foundation layers of a thin film magnetic head are disposed between insulating layers and bias magnetic field application layers, and are configured of Cr or Cr alloy. The insulating layers are configured of a Si oxide such that the Si content of the Si oxide is in the range of 30˜56 at % (atom %) and that the atom ratio of oxygen to Si (O/Si) is in the range of 0.8˜1.3. With the configuration, the occurrence rate of noise is reduced.

摘要翻译： 薄膜磁头的底层设置在绝缘层和偏置磁场施加层之间，并由Cr或Cr合金构成。 绝缘层由Si氧化物构成，使得Si氧化物的Si含量在30〜56at％（原子％）的范围内，氧与Si（O / Si）的原子比在范围内 为0.8〜1.3。 通过该结构，噪声的发生率降低。

公开(公告)号：US20100177440A1

公开(公告)日：2010-07-15

申请号：US12318924

申请日：2009-01-13

申请人： Takayasu Kanaya ,  Kei Hirata ,  Yohei Koyanagi ,  Seiichi Takayama ,  Shinji Hara ,  Toshiyuki Ayukawa

发明人： Takayasu Kanaya ,  Kei Hirata ,  Yohei Koyanagi ,  Seiichi Takayama ,  Shinji Hara ,  Toshiyuki Ayukawa

IPC分类号： G11B5/127 ,  G11B5/48 ,  G11B5/60

CPC分类号： G11B5/3932 ,  G01R33/098

摘要： Foundation layers of a thin film magnetic head are disposed between insulating layers and bias magnetic field application layers, and are configured of Cr or Cr alloy. The insulating layers are configured of a Si oxide such that the Si content of the Si oxide is in the range of 30˜56 at % (atom %) and that the atom ratio of oxygen to Si (O/Si) is in the range of 0.8˜1.3. With the configuration, the occurrence rate of noise is reduced.

摘要翻译： 薄膜磁头的底层设置在绝缘层和偏置磁场施加层之间，并由Cr或Cr合金构成。 绝缘层由Si氧化物构成，使得Si氧化物的Si含量在30〜56at％（原子％）的范围内，氧与Si（O / Si）的原子比在范围内 为0.8〜1.3。 通过该结构，噪声的发生率降低。

公开(公告)号：US08724264B2

公开(公告)日：2014-05-13

申请号：US12230781

申请日：2008-09-04

申请人： Kei Hirata ,  Takayasu Kanaya ,  Kosuke Tanaka ,  Shinji Hara

发明人： Kei Hirata ,  Takayasu Kanaya ,  Kosuke Tanaka ,  Shinji Hara

IPC分类号： G11B5/33 ,  B82Y10/00 ,  B82Y25/00 ,  G11B5/39

CPC分类号： B82Y10/00 ,  B82Y25/00 ,  G11B5/3909 ,  G11B5/3912 ,  G11B5/3932 ,  G11B2005/3996

摘要： A thin film magnetic head including a magnetoresistive element (MR) having higher reading performance. In manufacturing the thin film magnetic head, after forming an MR element, a pair of magnetic domain controlling layers are formed by stacking a buffer layer, a magnetic bias layer and a first cap layer in this order on both sides, in a track-width direction, of the MR element via an insulating layer, respectively. Then, a second cap layer is formed to cover the upper surface of the MR element and connect the pair of cap-layers. Then, a gap adjustment layer and a top shielding layer are formed to cover the pair of first cap layers and the second cap layer, completing a read head section.

摘要翻译： 包括具有较高读取性能的磁阻元件（MR）的薄膜磁头。 在制造薄膜磁头时，在形成MR元件之后，通过在两侧依次层叠缓冲层，磁偏置层和第一盖层而形成一对磁畴控制层，轨道宽度 MR元件的方向分别经由绝缘层。 然后，形成第二盖层以覆盖MR元件的上表面并连接一对盖层。 然后，形成间隙调整层和顶部屏蔽层以覆盖一对第一盖层和第二盖层，从而完成读取头部。

公开(公告)号：US07898775B2

公开(公告)日：2011-03-01

申请号：US11826290

申请日：2007-07-13

申请人： Kei Hirata ,  Shinji Hara ,  Takayasu Kanaya ,  Takeo Kagami

发明人： Kei Hirata ,  Shinji Hara ,  Takayasu Kanaya ,  Takeo Kagami

IPC分类号： G11B5/39

CPC分类号： G11B5/39

摘要： An MR element includes a free layer whose direction of magnetization changes in response to an external magnetic field. Two bias magnetic field applying layers are disposed adjacent to two side surfaces of the MR element. Each bias magnetic field applying layer includes a nonmagnetic intermediate layer, and a first magnetic layer and a second magnetic layer disposed to sandwich the intermediate layer. The first and second magnetic layers are antiferromagnetically exchange-coupled to each other through RKKY interaction.

摘要翻译： MR元件包括其磁化方向响应于外部磁场而变化的自由层。 两个偏置磁场施加层邻近MR元件的两个侧表面设置。 每个偏置磁场施加层包括非磁性中间层以及设置成夹持中间层的第一磁性层和第二磁性层。 第一和第二磁性层通过RKKY相互作用彼此反铁磁交换耦合。

公开(公告)号：US20100202088A1

公开(公告)日：2010-08-12

申请号：US12320878

申请日：2009-02-06

申请人： Naoki Ohta ,  Hiroshi Yamazaki ,  Kosuke Tanaka ,  Takayasu Kanaya ,  Kei Hirata

发明人： Naoki Ohta ,  Hiroshi Yamazaki ,  Kosuke Tanaka ,  Takayasu Kanaya ,  Kei Hirata

IPC分类号： G11B5/33

CPC分类号： G11B5/3932 ,  G01R33/098

摘要： The invention is devised to provide a magnetoresistive element that is hardly susceptible to harmful influence of unnecessary magnetic fields and noise of heat even when reduction in size is achieved to be adaptable to higher recording density, and therefore that is excellent in operational reliability. The magnetoresistive element includes a stacked structure including, in order: a magnetically pinned layer whose magnetization direction is fixed in a given direction; a non-magnetic layer; a magnetically free layer whose magnetization direction changes according to an external magnetic field; and an antiferromagnetic bias layer exchange-coupled with the magnetically free layer. The exchange-coupling magnetic field between the magnetically free layer and the antiferromagnetic bias layer is smaller than a saturation magnetic field of the magnetically free layer.

摘要翻译： 本发明的目的在于提供一种磁阻元件，即使实现了适应于较高记录密度的尺寸减小，几乎不易受不必要的磁场的有害影响和热噪声的影响，因此具有优异的操作可靠性。 磁阻元件包括层叠结构，其顺序包括：磁性固定层，其磁化方向在给定方向上固定; 非磁性层; 磁化方向根据外部磁场而变化的无磁性层; 和与磁性层交换耦合的反铁磁偏置层。 磁性层和反铁磁偏置层之间的交换耦合磁场小于无磁层的饱和磁场。