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    Thin film magnetic head, magnetic head slider, head gimbal assembly, head arm assembly, magnetic disk device and method of manufacturing thin film magnetic head
    1.
    发明申请
    Thin film magnetic head, magnetic head slider, head gimbal assembly, head arm assembly, magnetic disk device and method of manufacturing thin film magnetic head 有权
    薄膜磁头，磁头滑块，头万向架组件，头臂组件，磁盘装置及制造薄膜磁头的方法

    公开(公告)号：US20090323222A1

    公开(公告)日：2009-12-31

    申请号：US12216162

    申请日：2008-06-30

    申请人： Kei Hirata ,  Kazuki Sato ,  Yohei Koyanagi ,  Takayasu Kanaya ,  Takeo Kagami

    发明人： Kei Hirata ,  Kazuki Sato ,  Yohei Koyanagi ,  Takayasu Kanaya ,  Takeo Kagami

    IPC分类号： G11B5/48 ,  G11B5/33

    CPC分类号： G11B5/398 ,  G11B5/3166 ,  G11B5/3169 ,  G11B5/3173 ,  G11B5/3932

    摘要： In manufacturing the thin film magnetic head, the rear end face of the MR element and the rear end face of a resistive film pattern are determined with high precision using a mask pattern, in which a first opening and a second opening are collectively formed. The first and second openings are located side by side in a track-width direction. The first opening includes a first edge extending across the MR film in the track-width direction, and the second opening includes a second edge located at a given interval, as measured in a direction orthogonal to the track-width direction, from the first edge, and extending in the track-width direction. In the step of polishing for forming a magnetic-recording-medium-facing-surface, the amount of polishing is determined by monitoring the resistance change of the resistive film pattern, thereby reducing the dimension errors in the MR height when manufacturing the MR element.

    摘要翻译： 在制造薄膜磁头时，使用其中共同形成第一开口和第二开口的掩模图案，以高精度确定MR元件的后端面和电阻膜图案的后端面。 第一和第二开口沿着轨道宽度方向并排设置。 第一开口包括在轨道宽度方向上跨过MR膜延伸的第一边缘，并且第二开口包括位于沿与轨道宽度方向正交的方向上测量的给定间隔的第二边缘，从第一边缘 并沿轨道宽度方向延伸。 在用于形成面向磁记录介质的表面的抛光步骤中，通过监视电阻膜图案的电阻变化来确定抛光量，从而在制造MR元件时减小MR高度的尺寸误差。

    Thin film magnetic head having similarly structured resistive film pattern and magnetic bias layer
    2.
    发明授权
    Thin film magnetic head having similarly structured resistive film pattern and magnetic bias layer 有权
    具有类似结构的电阻膜图案和磁偏置层的薄膜磁头

    公开(公告)号：US08427790B2

    公开(公告)日：2013-04-23

    申请号：US12216162

    申请日：2008-06-30

    申请人： Kei Hirata ,  Kazuki Sato ,  Yohei Koyanagi ,  Takayasu Kanaya ,  Takeo Kagami

    发明人： Kei Hirata ,  Kazuki Sato ,  Yohei Koyanagi ,  Takayasu Kanaya ,  Takeo Kagami

    IPC分类号： G11B5/39

    CPC分类号： G11B5/398 ,  G11B5/3166 ,  G11B5/3169 ,  G11B5/3173 ,  G11B5/3932

    摘要： A thin film magnetic head includes a magnetoresistive element having a recording-medium-facing-surface which is to be faced with a magnetic recording medium; a magnetic bias layer located on a side opposite to the recording-medium-facing-surface of the magnetoresistive element, and applying a bias magnetic field to the magnetoresistive element in a direction orthogonal to the recording-medium-facing-surface; and a resistive film pattern having the recording-medium-facing-surface, the resistive film pattern being located side by side with the magnetoresistive element in a track-width direction.

    摘要翻译： 薄膜磁头包括具有面向磁记录介质的记录介质面对表面的磁阻元件; 位于与所述磁阻元件的记录介质相对表面相对的一侧的磁偏置层，并且在与所述记录介质相对表面正交的方向上向所述磁阻元件施加偏置磁场; 以及具有记录介质面向表面的电阻膜图案，电阻膜图案与磁阻元件沿轨道宽度方向并排定位。

    Magnetoresistive Sensor, magnetic head, head gimbal assembly and disk drive unit with the same
    5.
    发明申请
    Magnetoresistive Sensor, magnetic head, head gimbal assembly and disk drive unit with the same 有权
    磁阻传感器，磁头，头万向节组件和磁盘驱动单元相同

    公开(公告)号：US20120099227A1

    公开(公告)日：2012-04-26

    申请号：US12929198

    申请日：2011-01-06

    申请人： Chiuming Lueng ,  Kazuki Sato ,  Yohei Koyanagi ,  Cheukwing Leung ,  Juren Ding ,  Rongkwang Ni ,  Wanyin Kwan ,  Siuman Mok

    发明人： Chiuming Lueng ,  Kazuki Sato ,  Yohei Koyanagi ,  Cheukwing Leung ,  Juren Ding ,  Rongkwang Ni ,  Wanyin Kwan ,  Siuman Mok

    IPC分类号： G11B5/33 ,  G01R33/02 ,  G11B5/48

    CPC分类号： G11B5/3912 ,  B82Y10/00 ,  B82Y25/00 ,  G11B5/3909 ,  G11B2005/3996

    摘要： A MR sensor comprises a first shielding layer, a second shielding layer, a MR element and a pair of hard magnet layers sandwiched therebetween, and a non-magnetic insulating layer formed at a side of the MR element far from an air bearing surface of a slider. The MR sensor further comprises a first non-magnetic conducting layer formed between the first shielding layer and the MR element, and the first non-magnetic conducting layer is embedded in the first shielding layer and kept separate from the ABS. The MR sensor of the invention can obtain a narrower read gap to increase the resolution power and improve the reading performance, and obtain a strong longitudinal bias field to stabilize the MR sensor so as to increase the total sensor area and, in turn, get an improved reliability and performance. The present invention also discloses a magnetic head, a HGA and a disk drive unit.

    摘要翻译： MR传感器包括第一屏蔽层，第二屏蔽层，MR元件和夹在其间的一对硬磁体层，以及形成在MR元件的远离空气轴承表面的一侧的非磁性绝缘层 滑块 MR传感器还包括形成在第一屏蔽层和MR元件之间的第一非磁性导电层，并且第一非导电层嵌入第一屏蔽层中并与ABS分离。 本发明的MR传感器可以获得更窄的读取间隙，以提高分辨率和提高读取性能，并获得强的纵向偏置场以稳定MR传感器，从而增加总传感器面积，从而获得 提高可靠性和性能。 本发明还公开了一种磁头，HGA和盘驱动单元。

    Magnetoresistive sensor, including non-magnetic conducting layer embedded in shielding layer and magnetic head, head gimbal assembly and disk drive unit with the same
    6.
    发明授权
    Magnetoresistive sensor, including non-magnetic conducting layer embedded in shielding layer and magnetic head, head gimbal assembly and disk drive unit with the same 有权
    磁阻传感器，包括嵌入屏蔽层和磁头的非磁性导电层，磁头万向架组件和磁盘驱动单元

    公开(公告)号：US08582248B2

    公开(公告)日：2013-11-12

    申请号：US12929198

    申请日：2011-01-06

    申请人： Chiuming Lueng ,  Kazuki Sato ,  Yohei Koyanagi ,  Cheukwing Leung ,  Juren Ding ,  Rongkwang Ni ,  Wanyin Kwan ,  Siuman Mok

    发明人： Chiuming Lueng ,  Kazuki Sato ,  Yohei Koyanagi ,  Cheukwing Leung ,  Juren Ding ,  Rongkwang Ni ,  Wanyin Kwan ,  Siuman Mok

    IPC分类号： G11B5/39

    CPC分类号： G11B5/3912 ,  B82Y10/00 ,  B82Y25/00 ,  G11B5/3909 ,  G11B2005/3996

    摘要： A MR sensor comprises a first shielding layer, a second shielding layer, a MR element and a pair of hard magnet layers sandwiched therebetween, and a non-magnetic insulating layer formed at a side of the MR element far from an air bearing surface of a slider. The MR sensor further comprises a first non-magnetic conducting layer formed between the first shielding layer and the MR element, and the first non-magnetic conducting layer is embedded in the first shielding layer and kept separate from the ABS. The MR sensor of the invention can obtain a narrower read gap to increase the resolution power and improve the reading performance, and obtain a strong longitudinal bias field to stabilize the MR sensor so as to increase the total sensor area and, in turn, get an improved reliability and performance. The present invention also discloses a magnetic head, a HGA and a disk drive unit.

    摘要翻译： MR传感器包括第一屏蔽层，第二屏蔽层，MR元件和夹在其间的一对硬磁体层，以及形成在MR元件的远离空气轴承表面的一侧的非磁性绝缘层 滑块 MR传感器还包括形成在第一屏蔽层和MR元件之间的第一非磁性导电层，并且第一非导电层嵌入第一屏蔽层中并与ABS分离。 本发明的MR传感器可以获得更窄的读取间隙，以提高分辨率和提高读取性能，并获得强的纵向偏置场以稳定MR传感器，从而增加总传感器面积，从而获得 提高可靠性和性能。 本发明还公开了一种磁头，HGA和盘驱动单元。

    Thin-film element having lower layer with narrower width and the thin-film magnetic head having the element
    7.
    发明申请
    Thin-film element having lower layer with narrower width and the thin-film magnetic head having the element 失效
    薄膜元件具有较窄的宽度的下层和具有元件的薄膜磁头

    公开(公告)号：US20070223140A1

    公开(公告)日：2007-09-27

    申请号：US11723349

    申请日：2007-03-19

    申请人： Hiraku Hirabayashi ,  Yohei Koyanagi

    发明人： Hiraku Hirabayashi ,  Yohei Koyanagi

    IPC分类号： G11B5/147 ,  G11B5/127

    CPC分类号： G11B5/3116 ,  G11B5/1278 ,  G11B5/3163 ,  Y10T29/49037 ,  Y10T29/49041 ,  Y10T29/49046 ,  Y10T29/49048 ,  Y10T29/49052

    摘要： A manufacturing method of a thin-film element having a lower layer with a narrower width is provided, which comprises steps of: forming a first film and a second film on the first film; forming a second layer having a width WUP obtained by trimming the second film; forming a mask film having a smaller etching rate than the first film so as to cover the second layer; forming a pattern having a width WTR larger than the width WUP, obtained by collectively trimming the mask film covering the second layer and at least an upper portion of the first film; and forming a first layer having a width WLO smaller than the width WUP or having a portion with a width WLO smaller than the width WUP, obtained by trimming the first film without changing the width WUP of the second layer.

    摘要翻译： 提供了具有宽度较窄的下层的薄膜元件的制造方法，其包括以下步骤：在第一膜上形成第一膜和第二膜; 形成具有通过修整第二膜获得的宽度W UP的第二层; 形成具有比所述第一膜蚀刻速率小的掩模膜以覆盖所述第二层; 形成宽度大于宽度W UP的图案，其通过集中修整覆盖第二层的掩模膜和至少第一膜的上部而获得 ; 以及形成宽度小于宽度W UP的宽度W LO 2的第一层或具有小于宽度W的宽度小于宽度的部分的第一层 通过在不改变第二层的宽度W UP的情况下对第一膜进行修整而获得。

    Method of manufacturing a thin-film magnetic head having an element having a lower layer with a narrower width
    8.
    发明授权
    Method of manufacturing a thin-film magnetic head having an element having a lower layer with a narrower width 失效
    具有具有较窄宽度的下层的元件的薄膜磁头的制造方法

    公开(公告)号：US07810226B2

    公开(公告)日：2010-10-12

    申请号：US11723349

    申请日：2007-03-19

    申请人： Hiraku Hirabayashi ,  Yohei Koyanagi

    发明人： Hiraku Hirabayashi ,  Yohei Koyanagi

    IPC分类号： G11B5/187 ,  B44C1/22

    CPC分类号： G11B5/3116 ,  G11B5/1278 ,  G11B5/3163 ,  Y10T29/49037 ,  Y10T29/49041 ,  Y10T29/49046 ,  Y10T29/49048 ,  Y10T29/49052

    摘要： A manufacturing method of a thin-film element having a lower layer with a narrower width is provided, which comprises steps of: forming a first film and a second film on the first film; forming a second layer having a width WUP obtained by trimming the second film; forming a mask film having a smaller etching rate than the first film so as to cover the second layer; forming a pattern having a width WTR larger than the width WUP, obtained by collectively trimming the mask film covering the second layer and at least an upper portion of the first film; and forming a first layer having a width WLO smaller than the width WUP or having a portion with a width WLO smaller than the width WUP, obtained by trimming the first film without changing the width WUP of the second layer.

    摘要翻译： 提供了具有宽度较窄的下层的薄膜元件的制造方法，其包括以下步骤：在第一膜上形成第一膜和第二膜; 形成具有通过修整第二膜获得的宽度WUP的第二层; 形成具有比所述第一膜蚀刻速率小的掩模膜以覆盖所述第二层; 形成宽度大于宽度WUP的宽度的图案，其通过集中修整覆盖第二层的掩模膜和至少第一膜的上部而获得; 并且形成具有小于宽度WUP的宽度WLO或具有通过在不改变第二层的宽度WUP的情况下修剪第一膜而获得的宽度WLO小于宽度WUP的部分的第一层。