公开(公告)号：US08054588B2

公开(公告)日：2011-11-08

申请号：US13025842

申请日：2011-02-11

申请人： Kazumasa Nishimura ,  Ryo Nakabayashi ,  Yosuke Ide ,  Hasahiko Ishizone ,  Masamichi Saito ,  Naoya Hasegawa ,  Yoshihiro Nishiyana ,  Akio Hanada ,  Hidekezu Kobayashi

发明人： Kazumasa Nishimura ,  Ryo Nakabayashi ,  Yosuke Ide ,  Hasahiko Ishizone ,  Masamichi Saito ,  Naoya Hasegawa ,  Yoshihiro Nishiyana ,  Akio Hanada ,  Hidekezu Kobayashi

IPC分类号： G11B5/33

CPC分类号： B82Y10/00 ,  B82Y25/00 ,  G11B5/3906 ,  G11B5/3909

摘要： A tunnel magnetoresistive element includes a laminate including a pinned magnetic layer, an insulating barrier layer, and a free magnetic layer. The insulating barrier layer is composed of Ti—Mg—O or Ti—O. The free magnetic layer includes an enhancement sublayer, a first soft magnetic sublayer, a nonmagnetic metal sublayer, and a second soft magnetic sublayer. For example, the enhancement sublayer is composed of Co—Fe, the first soft magnetic sublayer and the second soft magnetic sublayer are composed of Ni—Fe, and the nonmagnetic metal sublayer is composed of Ta. The total thickness of the average thickness of the enhancement sublayer and the average thickness of the first soft magnetic sublayer is in the range of 25 to 80 angstroms. Accordingly, the tunneling magnetoresistive element can consistently have a higher rate of resistance change than before.

摘要翻译： 隧道磁阻元件包括包括钉扎磁性层，绝缘阻挡层和自由磁性层的层压体。 绝缘阻挡层由Ti-Mg-O或Ti-O组成。 自由磁性层包括增强子层，第一软磁子层，非磁性金属子层和第二软磁性子层。 例如，增强子层由Co-Fe构成，第一软磁性子层和第二软磁性子层由Ni-Fe构成，非磁性金属子层由Ta构成。 增强子层的平均厚度的总厚度和第一软磁性子层的平均厚度在25至80埃的范围内。 因此，隧道磁阻元件可以一直具有比以前更高的电阻变化率。

公开(公告)号：US20110129690A1

公开(公告)日：2011-06-02

申请号：US13025842

申请日：2011-02-11

申请人： Kazumasa Nishimura ,  Ryo Nakabayashi ,  Yosuke Ide ,  Hasahiko Ishizone ,  Masamichi Saito ,  Naoya Hasegawa ,  Yoshihiro Nishiyana ,  Akio Hanada ,  Hidekezu Kobayashi

发明人： Kazumasa Nishimura ,  Ryo Nakabayashi ,  Yosuke Ide ,  Hasahiko Ishizone ,  Masamichi Saito ,  Naoya Hasegawa ,  Yoshihiro Nishiyana ,  Akio Hanada ,  Hidekezu Kobayashi

IPC分类号： G11B5/33 ,  B82Y30/00

CPC分类号： B82Y10/00 ,  B82Y25/00 ,  G11B5/3906 ,  G11B5/3909

摘要： A tunnel magnetoresistive element includes a laminate including a pinned magnetic layer, an insulating barrier layer, and a free magnetic layer. The insulating barrier layer is composed of Ti—Mg—O or Ti—O. The free magnetic layer includes an enhancement sublayer, a first soft magnetic sublayer, a nonmagnetic metal sublayer, and a second soft magnetic sublayer. For example, the enhancement sublayer is composed of Co—Fe, the first soft magnetic sublayer and the second soft magnetic sublayer are composed of Ni—Fe, and the nonmagnetic metal sublayer is composed of Ta. The total thickness of the average thickness of the enhancement sublayer and the average thickness of the first soft magnetic sublayer is in the range of 25 to 80 angstroms. Accordingly, the tunneling magnetoresistive element can consistently have a higher rate of resistance change than before.

摘要翻译： 隧道磁阻元件包括包括钉扎磁性层，绝缘阻挡层和自由磁性层的层压体。 绝缘阻挡层由Ti-Mg-O或Ti-O组成。 自由磁性层包括增强子层，第一软磁子层，非磁性金属子层和第二软磁性子层。 例如，增强子层由Co-Fe构成，第一软磁性子层和第二软磁性子层由Ni-Fe构成，非磁性金属子层由Ta构成。 增强子层的平均厚度的总厚度和第一软磁性子层的平均厚度在25至80埃的范围内。 因此，隧道磁阻元件可以一直具有比以前更高的电阻变化率。

公开(公告)号：US08009391B2

公开(公告)日：2011-08-30

申请号：US12120887

申请日：2008-05-15

申请人： Kenichi Tanaka ,  Eiji Umetsu ,  Kazuaki Ikarashi ,  Kota Asatsuma ,  Norimasa Okanishi ,  Yoshihiro Nishiyama ,  Masamichi Saito ,  Yosuke Ide ,  Kazumasa Nishimura ,  Ryo Nakabayashi ,  Hidekazu Kobayashi ,  Akio Hanada ,  Naoya Hasegawa

发明人： Kenichi Tanaka ,  Eiji Umetsu ,  Kazuaki Ikarashi ,  Kota Asatsuma ,  Norimasa Okanishi ,  Yoshihiro Nishiyama ,  Masamichi Saito ,  Yosuke Ide ,  Kazumasa Nishimura ,  Ryo Nakabayashi ,  Hidekazu Kobayashi ,  Akio Hanada ,  Naoya Hasegawa

IPC分类号： G11B5/33

CPC分类号： G01R33/093 ,  B82Y10/00 ,  B82Y25/00 ,  B82Y40/00 ,  G11B5/3906 ,  G11B5/3909 ,  H01F10/30 ,  H01F10/3254 ,  H01F10/3277 ,  H01F41/302 ,  H01L43/08 ,  H01L43/12

摘要： An underlying layer is composed of Co—Fe—B that is an amorphous magnetic material. Thus, the upper surface of the underlying layer can be taken as a lower shield layer-side reference position for obtaining a gap length (GL) between upper and lower shields, resulting in a narrower gap than before. In addition, since the underlying layer has an amorphous structure, the underlying layer does not adversely affect the crystalline orientation of individual layers to be formed thereon, and the surface of the underlying layer has good planarizability. Accordingly, PW50 (half-amplitude pulse width) and SN ratio can be improved more than before without causing a decrease in rate of change in resistance (Δ R/R) or the like, thereby achieving a structure suitable for increasing recording density.

摘要翻译： 下层由作为非晶磁性材料的Co-Fe-B组成。 因此，可以将下层的上表面作为下屏蔽层侧参考位置，以获得上屏蔽和下屏蔽之间的间隙长度（GL），导致与之前的间隙较窄。 此外，由于底层具有非晶结构，所以下层不会对要在其上形成的各层的结晶取向产生不利影响，并且下层的表面具有良好的平坦化性。 因此，PW50（半幅度脉冲宽度）和SN比可以比以前更多地改善，而不会导致电阻变化率（＆Dgr; R / R）等的降低，从而实现适于提高记录密度的结构。

公开(公告)号：US20080285180A1

公开(公告)日：2008-11-20

申请号：US12120887

申请日：2008-05-15

申请人： Kenichi Tanaka ,  Eiji Umetsu ,  Kazuaki Ikarashi ,  Kota Asatsuma ,  Norimasa Okanishi ,  Yoshihiro Nishiyama ,  Masamichi Saito ,  Yosuke Ide ,  Kazumasa Nishimura ,  Ryo Nakabayashi ,  Hidekazu Kobayashi ,  Akio Hanada ,  Naoya Hasegawa

发明人： Kenichi Tanaka ,  Eiji Umetsu ,  Kazuaki Ikarashi ,  Kota Asatsuma ,  Norimasa Okanishi ,  Yoshihiro Nishiyama ,  Masamichi Saito ,  Yosuke Ide ,  Kazumasa Nishimura ,  Ryo Nakabayashi ,  Hidekazu Kobayashi ,  Akio Hanada ,  Naoya Hasegawa

IPC分类号： G11B5/33 ,  B05D5/12

CPC分类号： G01R33/093 ,  B82Y10/00 ,  B82Y25/00 ,  B82Y40/00 ,  G11B5/3906 ,  G11B5/3909 ,  H01F10/30 ,  H01F10/3254 ,  H01F10/3277 ,  H01F41/302 ,  H01L43/08 ,  H01L43/12

摘要： An underlying layer is composed of Co—Fe—B that is an amorphous magnetic material. Thus, the upper surface of the underlying layer can be taken as a lower shield layer-side reference position for obtaining a gap length (GL) between upper and lower shields, resulting in a narrower gap than before. In addition, since the underlying layer has an amorphous structure, the underlying layer does not adversely affect the crystalline orientation of individual layers to be formed thereon, and the surface of the underlying layer has good planarizability. Accordingly, PW50 (half-amplitude pulse width) and SN ratio can be improved more than before without causing a decrease in rate of change in resistance (Δ R/R) or the like, thereby achieving a structure suitable for increasing recording density.

摘要翻译： 下层由作为非晶磁性材料的Co-Fe-B组成。 因此，可以将下层的上表面作为下屏蔽层侧参考位置，以获得上屏蔽和下屏蔽之间的间隙长度（GL），导致与之前的间隙较窄。 此外，由于底层具有非晶结构，所以下层不会对要在其上形成的各层的结晶取向产生不利影响，并且下层的表面具有良好的平坦化性。 因此，可以比以前更多地改善PW50（半幅度脉冲宽度）和SN比，而不会导致电阻变化率（ΔR/ R）等的降低，从而实现适于提高记录密度的结构。

公开(公告)号：US08208231B2

公开(公告)日：2012-06-26

申请号：US12617199

申请日：2009-11-12

申请人： Kazumasa Nishimura ,  Hidekazu Kobayashi ,  Masamichi Saito ,  Yosuke Ide ,  Ryo Nakabayashi ,  Yoshihiro Nishiyama ,  Akio Hanada ,  Naoya Hasegawa

发明人： Kazumasa Nishimura ,  Hidekazu Kobayashi ,  Masamichi Saito ,  Yosuke Ide ,  Ryo Nakabayashi ,  Yoshihiro Nishiyama ,  Akio Hanada ,  Naoya Hasegawa

IPC分类号： G11B5/33

CPC分类号： G11B5/3909 ,  B82Y10/00 ,  B82Y25/00 ,  G01R33/093 ,  G01R33/098 ,  G11B5/3906 ,  G11C11/161 ,  H01F10/3254 ,  H01F10/3272 ,  H01L43/08 ,  Y10T428/1114

摘要： A tunneling magnetic sensing element includes a laminate in which a pinned magnetic layer having a magnetization direction pinned, an insulating barrier layer, and a free magnetic layer having a magnetization direction variable with an external magnetic field are laminated in order from below. The insulating barrier layer is made of Mg—O. The free magnetic layer has a soft magnetic layer and an enhanced layer disposed between the soft magnetic layer and the insulating barrier layer to have a spin polarization ratio higher than the soft magnetic layer. An insertion magnetic layer made of one selected from Co—Fe—B, Co—B, Fe—B, and Co—Fe is inserted into the soft magnetic layer in a direction parallel to the interface of each layer constituting the laminate, and the soft magnetic layer is divided into multiple layers in a thickness direction through the insertion magnetic layer.

摘要翻译： 隧道磁传感元件包括层叠体，其中具有磁化方向钉扎的钉扎磁性层，绝缘阻挡层和具有可变形外部磁场的磁化方向的自由磁性层从下面依次层叠。 绝缘阻挡层由Mg-O制成。 自由磁性层具有软磁性层和设置在软磁性层与绝缘阻挡层之间的增强层，其自旋极化比高于软磁性层。 将由Co-Fe-B，Co-B，Fe-B和Co-Fe中的一种制成的插入磁性层沿与构成层叠体的各层的界面平行的方向插入到软磁性层中， 软磁性层通过插入磁性层在厚度方向上被分成多层。

公开(公告)号：US20100055501A1

公开(公告)日：2010-03-04

申请号：US12617199

申请日：2009-11-12

申请人： Kazumasa Nishimura ,  Hidekazu Kobayashi ,  Masamichi Saito ,  Yosuke Ide ,  Ryo Nakabayashi ,  Yoshihiro Nishiyama ,  Akio Hanada ,  Naoya Hasegawa

发明人： Kazumasa Nishimura ,  Hidekazu Kobayashi ,  Masamichi Saito ,  Yosuke Ide ,  Ryo Nakabayashi ,  Yoshihiro Nishiyama ,  Akio Hanada ,  Naoya Hasegawa

IPC分类号： G11B5/33

CPC分类号： G11B5/3909 ,  B82Y10/00 ,  B82Y25/00 ,  G01R33/093 ,  G01R33/098 ,  G11B5/3906 ,  G11C11/161 ,  H01F10/3254 ,  H01F10/3272 ,  H01L43/08 ,  Y10T428/1114

摘要： A tunneling magnetic sensing element includes a laminate in which a pinned magnetic layer having a magnetization direction pinned, an insulating barrier layer, and a free magnetic layer having a magnetization direction variable with an external magnetic field are laminated in order from below. The insulating barrier layer is made of Mg—O. The free magnetic layer has a soft magnetic layer and an enhanced layer disposed between the soft magnetic layer and the insulating barrier layer to have a spin polarization ratio higher than the soft magnetic layer. An insertion magnetic layer made of one selected from Co—Fe—B, Co—B, Fe—B, and Co—Fe is inserted into the soft magnetic layer in a direction parallel to the interface of each layer constituting the laminate, and the soft magnetic layer is divided into multiple layers in a thickness direction through the insertion magnetic layer.

摘要翻译： 隧道磁传感元件包括层叠体，其中具有磁化方向钉扎的钉扎磁性层，绝缘阻挡层和具有可变形外部磁场的磁化方向的自由磁性层从下面依次层叠。 绝缘阻挡层由Mg-O制成。 自由磁性层具有软磁性层和设置在软磁性层与绝缘阻挡层之间的增强层，其自旋极化比高于软磁性层。 将由Co-Fe-B，Co-B，Fe-B和Co-Fe中的一种制成的插入磁性层沿与构成层叠体的各层的界面平行的方向插入到软磁性层中， 软磁性层通过插入磁性层在厚度方向上被分成多层。

公开(公告)号：US20080261082A1

公开(公告)日：2008-10-23

申请号：US11866609

申请日：2007-10-03

申请人： Kazumasa Nishimura ,  Ryo Nakabayashi ,  Yosuke Ide ,  Masahiko Ishizone ,  Masamichi Saito ,  Naoya Hasegawa ,  Yoshihiro Nishiyama ,  Akio Hanada ,  Hidekazu Kobayashi

发明人： Kazumasa Nishimura ,  Ryo Nakabayashi ,  Yosuke Ide ,  Masahiko Ishizone ,  Masamichi Saito ,  Naoya Hasegawa ,  Yoshihiro Nishiyama ,  Akio Hanada ,  Hidekazu Kobayashi

IPC分类号： G11B5/706

CPC分类号： B82Y10/00 ,  B82Y25/00 ,  G11B5/3906 ,  G11B5/3909 ,  H01L43/08

摘要： A tunnel magnetoresistive element includes a laminate including a pinned magnetic layer, an insulating barrier layer, and a free magnetic layer. The insulating barrier layer is composed of Ti—Mg—O or Ti—O. The free magnetic layer includes an enhancement sublayer, a first soft magnetic sublayer, a nonmagnetic metal sublayer, and a second soft magnetic sublayer. For example, the enhancement sublayer is composed of Co—Fe, the first soft magnetic sublayer and the second soft magnetic sublayer are composed of Ni—Fe, and the nonmagnetic metal sublayer is composed of Ta. The total thickness of the average thickness of the enhancement sublayer and the average thickness of the first soft magnetic sublayer is in the range of 25 to 80 angstroms. Accordingly, the tunneling magnetoresistive element can consistently have a higher rate of resistance change than before.

摘要翻译： 隧道磁阻元件包括包括钉扎磁性层，绝缘阻挡层和自由磁性层的层压体。 绝缘阻挡层由Ti-Mg-O或Ti-O组成。 自由磁性层包括增强子层，第一软磁子层，非磁性金属子层和第二软磁性子层。 例如，增强子层由Co-Fe构成，第一软磁性子层和第二软磁性子层由Ni-Fe构成，非磁性金属子层由Ta构成。 增强子层的平均厚度的总厚度和第一软磁性子层的平均厚度在25至80埃的范围内。 因此，隧道磁阻元件可以一直具有比以前更高的电阻变化率。