公开(公告)号：US08009391B2

公开(公告)日：2011-08-30

申请号：US12120887

申请日：2008-05-15

申请人： Kenichi Tanaka ,  Eiji Umetsu ,  Kazuaki Ikarashi ,  Kota Asatsuma ,  Norimasa Okanishi ,  Yoshihiro Nishiyama ,  Masamichi Saito ,  Yosuke Ide ,  Kazumasa Nishimura ,  Ryo Nakabayashi ,  Hidekazu Kobayashi ,  Akio Hanada ,  Naoya Hasegawa

发明人： Kenichi Tanaka ,  Eiji Umetsu ,  Kazuaki Ikarashi ,  Kota Asatsuma ,  Norimasa Okanishi ,  Yoshihiro Nishiyama ,  Masamichi Saito ,  Yosuke Ide ,  Kazumasa Nishimura ,  Ryo Nakabayashi ,  Hidekazu Kobayashi ,  Akio Hanada ,  Naoya Hasegawa

IPC分类号： G11B5/33

CPC分类号： G01R33/093 ,  B82Y10/00 ,  B82Y25/00 ,  B82Y40/00 ,  G11B5/3906 ,  G11B5/3909 ,  H01F10/30 ,  H01F10/3254 ,  H01F10/3277 ,  H01F41/302 ,  H01L43/08 ,  H01L43/12

摘要： An underlying layer is composed of Co—Fe—B that is an amorphous magnetic material. Thus, the upper surface of the underlying layer can be taken as a lower shield layer-side reference position for obtaining a gap length (GL) between upper and lower shields, resulting in a narrower gap than before. In addition, since the underlying layer has an amorphous structure, the underlying layer does not adversely affect the crystalline orientation of individual layers to be formed thereon, and the surface of the underlying layer has good planarizability. Accordingly, PW50 (half-amplitude pulse width) and SN ratio can be improved more than before without causing a decrease in rate of change in resistance (Δ R/R) or the like, thereby achieving a structure suitable for increasing recording density.

摘要翻译： 下层由作为非晶磁性材料的Co-Fe-B组成。 因此，可以将下层的上表面作为下屏蔽层侧参考位置，以获得上屏蔽和下屏蔽之间的间隙长度（GL），导致与之前的间隙较窄。 此外，由于底层具有非晶结构，所以下层不会对要在其上形成的各层的结晶取向产生不利影响，并且下层的表面具有良好的平坦化性。 因此，PW50（半幅度脉冲宽度）和SN比可以比以前更多地改善，而不会导致电阻变化率（＆Dgr; R / R）等的降低，从而实现适于提高记录密度的结构。

公开(公告)号：US20080285180A1

公开(公告)日：2008-11-20

申请号：US12120887

申请日：2008-05-15

申请人： Kenichi Tanaka ,  Eiji Umetsu ,  Kazuaki Ikarashi ,  Kota Asatsuma ,  Norimasa Okanishi ,  Yoshihiro Nishiyama ,  Masamichi Saito ,  Yosuke Ide ,  Kazumasa Nishimura ,  Ryo Nakabayashi ,  Hidekazu Kobayashi ,  Akio Hanada ,  Naoya Hasegawa

发明人： Kenichi Tanaka ,  Eiji Umetsu ,  Kazuaki Ikarashi ,  Kota Asatsuma ,  Norimasa Okanishi ,  Yoshihiro Nishiyama ,  Masamichi Saito ,  Yosuke Ide ,  Kazumasa Nishimura ,  Ryo Nakabayashi ,  Hidekazu Kobayashi ,  Akio Hanada ,  Naoya Hasegawa

IPC分类号： G11B5/33 ,  B05D5/12

CPC分类号： G01R33/093 ,  B82Y10/00 ,  B82Y25/00 ,  B82Y40/00 ,  G11B5/3906 ,  G11B5/3909 ,  H01F10/30 ,  H01F10/3254 ,  H01F10/3277 ,  H01F41/302 ,  H01L43/08 ,  H01L43/12

摘要： An underlying layer is composed of Co—Fe—B that is an amorphous magnetic material. Thus, the upper surface of the underlying layer can be taken as a lower shield layer-side reference position for obtaining a gap length (GL) between upper and lower shields, resulting in a narrower gap than before. In addition, since the underlying layer has an amorphous structure, the underlying layer does not adversely affect the crystalline orientation of individual layers to be formed thereon, and the surface of the underlying layer has good planarizability. Accordingly, PW50 (half-amplitude pulse width) and SN ratio can be improved more than before without causing a decrease in rate of change in resistance (Δ R/R) or the like, thereby achieving a structure suitable for increasing recording density.

摘要翻译： 下层由作为非晶磁性材料的Co-Fe-B组成。 因此，可以将下层的上表面作为下屏蔽层侧参考位置，以获得上屏蔽和下屏蔽之间的间隙长度（GL），导致与之前的间隙较窄。 此外，由于底层具有非晶结构，所以下层不会对要在其上形成的各层的结晶取向产生不利影响，并且下层的表面具有良好的平坦化性。 因此，可以比以前更多地改善PW50（半幅度脉冲宽度）和SN比，而不会导致电阻变化率（ΔR/ R）等的降低，从而实现适于提高记录密度的结构。

公开(公告)号：US20080074805A1

公开(公告)日：2008-03-27

申请号：US11857921

申请日：2007-09-19

申请人： Kazuaki Ikarashi ,  Eiji Umetsu ,  Kenichi Tanaka ,  Kazumasa Nishimura ,  Masamichi Saito ,  Yosuke Ide ,  Ryo Nakabayashi ,  Yoshihiro Nishiyama ,  Hidekazu Kobayashi ,  Naoya Hasegawa

发明人： Kazuaki Ikarashi ,  Eiji Umetsu ,  Kenichi Tanaka ,  Kazumasa Nishimura ,  Masamichi Saito ,  Yosuke Ide ,  Ryo Nakabayashi ,  Yoshihiro Nishiyama ,  Hidekazu Kobayashi ,  Naoya Hasegawa

IPC分类号： G11B5/33

CPC分类号： H01L43/08 ,  B82Y10/00 ,  B82Y25/00 ,  B82Y40/00 ,  G01R33/093 ,  G01R33/098 ,  G11B5/3906 ,  G11B5/3909 ,  G11C11/16 ,  H01F10/132 ,  H01F10/3254 ,  H01F41/302 ,  H01L43/12

摘要： A tunnel magnetoresistive sensor includes a pinned magnetic layer, an insulating barrier layer formed of Mg—O, and a free magnetic layer. A barrier-layer-side magnetic sublayer constituting at least part of the pinned magnetic layer and being in contact with the insulating barrier layer includes a first magnetic region formed of CoFeB or FeB and a second magnetic region formed of CoFe or Fe. The second magnetic region is disposed between the first magnetic region and the insulating barrier layer.

摘要翻译： 隧道磁阻传感器包括钉扎磁性层，由Mg-O形成的绝缘阻挡层和自由磁性层。 构成被钉扎磁性层的至少一部分并与绝缘阻挡层接触的阻挡层侧磁性子层包括由CoFeB或FeB形成的第一磁性区域和由CoFe或Fe形成的第二磁性区域。 第二磁性区域设置在第一磁性区域和绝缘阻挡层之间。

公开(公告)号：US07969693B2

公开(公告)日：2011-06-28

申请号：US11857921

申请日：2007-09-19

申请人： Kazuaki Ikarashi ,  Eiji Umetsu ,  Kenichi Tanaka ,  Kazumasa Nishimura ,  Masamichi Saito ,  Yosuke Ide ,  Ryo Nakabayashi ,  Yoshihiro Nishiyama ,  Hidekazu Kobayashi ,  Naoya Hasegawa

发明人： Kazuaki Ikarashi ,  Eiji Umetsu ,  Kenichi Tanaka ,  Kazumasa Nishimura ,  Masamichi Saito ,  Yosuke Ide ,  Ryo Nakabayashi ,  Yoshihiro Nishiyama ,  Hidekazu Kobayashi ,  Naoya Hasegawa

IPC分类号： G11B5/39

CPC分类号： H01L43/08 ,  B82Y10/00 ,  B82Y25/00 ,  B82Y40/00 ,  G01R33/093 ,  G01R33/098 ,  G11B5/3906 ,  G11B5/3909 ,  G11C11/16 ,  H01F10/132 ,  H01F10/3254 ,  H01F41/302 ,  H01L43/12

摘要： A tunnel magnetoresistive sensor includes a pinned magnetic layer, an insulating barrier layer formed of Mg—O, and a free magnetic layer. A barrier-layer-side magnetic sublayer constituting at least part of the pinned magnetic layer and being in contact with the insulating barrier layer includes a first magnetic region formed of CoFeB or FeB and a second magnetic region formed of CoFe or Fe. The second magnetic region is disposed between the first magnetic region and the insulating barrier layer.

摘要翻译： 隧道磁阻传感器包括钉扎磁性层，由Mg-O形成的绝缘阻挡层和自由磁性层。 构成被钉扎磁性层的至少一部分并与绝缘阻挡层接触的阻挡层侧磁性子层包括由CoFeB或FeB形成的第一磁性区域和由CoFe或Fe形成的第二磁性区域。 第二磁性区域设置在第一磁性区域和绝缘阻挡层之间。

公开(公告)号：US07599155B2

公开(公告)日：2009-10-06

申请号：US10823474

申请日：2004-04-13

申请人： Masamichi Saito ,  Yoshihiro Nishiyama ,  Yosuke Ide ,  Eiji Umetsu ,  Naoya Hasegawa ,  Yasuo Hayakawa

发明人： Masamichi Saito ,  Yoshihiro Nishiyama ,  Yosuke Ide ,  Eiji Umetsu ,  Naoya Hasegawa ,  Yasuo Hayakawa

IPC分类号： G11B5/39

CPC分类号： G11B5/3903 ,  G11B5/3163 ,  G11B5/398

摘要： A CPP giant magnetoresistive head includes lower and upper shield layers, and a giant magnetoresistive element disposed between the upper and lower shield layers and including a pinned magnetic layer, a free magnetic layer and a nonmagnetic layer disposed between the pinned magnetic layer and the free magnetic layer. In the CPP giant magnetoresistive head, the pinned magnetic layer extends to the rear of the nonmagnetic layer and the free magnetic layer in the height direction, and the dimension of the pinned magnetic layer in the height direction is larger than that in the track width direction. Also, the pinned magnetic layer comprises a magnetic material having a positive magnetostriction constant or a magnetic material having high coercive force, and the end of the pinned magnetic layer is exposed at a surface facing a recording medium.

摘要翻译： CPP巨磁阻头包括下屏蔽层和上屏蔽层，以及设置在上屏蔽层和下屏蔽层之间的巨磁阻元件，包括固定磁性层，自由磁性层和设置在被钉扎的磁性层和自由磁性层之间的非磁性层 层。 在CPP巨磁阻磁头中，被钉扎的磁性层在高度方向上延伸到非磁性层的后部和自由磁性层，并且被钉扎的磁性层在高度方向上的尺寸大于轨道宽度方向上的尺寸 。 此外，钉扎磁性层包括具有正的磁致伸缩常数的磁性材料或具有高矫顽力的磁性材料，并且被钉扎的磁性层的端部在面向记录介质的表面上暴露。

公开(公告)号：US20090316308A1

公开(公告)日：2009-12-24

申请号：US12548982

申请日：2009-08-27

申请人： Masamichi Saito ,  Yoshihiro Nishiyama ,  Yosuke Ide ,  Eiji Umetsu ,  Naoya Hasegawa ,  Yasuo Hayakawa

发明人： Masamichi Saito ,  Yoshihiro Nishiyama ,  Yosuke Ide ,  Eiji Umetsu ,  Naoya Hasegawa ,  Yasuo Hayakawa

IPC分类号： G11B5/127

CPC分类号： G11B5/3903 ,  G11B5/3163 ,  G11B5/398

摘要： A CPP giant magnetoresistive head includes lower and upper shield layers, and a giant magnetoresistive element disposed between the upper and lower shield layers and including a pinned magnetic layer, a free magnetic layer and a nonmagnetic layer disposed between the pinned magnetic layer and the free magnetic layer. In the CPP giant magnetoresistive head, the pinned magnetic layer extends to the rear of the nonmagnetic layer and the free magnetic layer in the height direction, and the dimension of the pinned magnetic layer in the height direction is larger than that in the track width direction. Also, the pinned magnetic layer comprises a magnetic material having a positive magnetostriction constant or a magnetic material having high coercive force, and the end of the pinned magnetic layer is exposed at a surface facing a recording medium.

摘要翻译： CPP巨磁阻头包括下屏蔽层和上屏蔽层，以及设置在上屏蔽层和下屏蔽层之间的巨磁阻元件，包括固定磁性层，自由磁性层和设置在被钉扎的磁性层和自由磁性层之间的非磁性层 层。 在CPP巨磁阻磁头中，被钉扎的磁性层在高度方向上延伸到非磁性层的后部和自由磁性层，并且被钉扎的磁性层在高度方向上的尺寸大于轨道宽度方向上的尺寸 。 此外，钉扎磁性层包括具有正的磁致伸缩常数的磁性材料或具有高矫顽力的磁性材料，并且被钉扎的磁性层的端部在面向记录介质的表面上暴露。

公开(公告)号：US07800867B2

公开(公告)日：2010-09-21

申请号：US12548982

申请日：2009-08-27

申请人： Masamichi Saito ,  Yoshihiro Nishiyama ,  Yosuke Ide ,  Eiji Umetsu ,  Naoya Hasegawa ,  Yasuo Hayakawa

发明人： Masamichi Saito ,  Yoshihiro Nishiyama ,  Yosuke Ide ,  Eiji Umetsu ,  Naoya Hasegawa ,  Yasuo Hayakawa

IPC分类号： G11B5/39

CPC分类号： G11B5/3903 ,  G11B5/3163 ,  G11B5/398

摘要： A CPP giant magnetoresistive head includes lower and upper shield layers, and a giant magnetoresistive element disposed between the upper and lower shield layers and including a pinned magnetic layer, a free magnetic layer and a nonmagnetic layer disposed between the pinned magnetic layer and the free magnetic layer. In the CPP giant magnetoresistive head, the pinned magnetic layer extends to the rear of the nonmagnetic layer and the free magnetic layer in the height direction, and the dimension of the pinned magnetic layer in the height direction is larger than that in the track width direction. Also, the pinned magnetic layer comprises a magnetic material having a positive magnetostriction constant or a magnetic material having high coercive force, and the end of the pinned magnetic layer is exposed at a surface facing a recording medium.

摘要翻译： CPP巨磁阻头包括下屏蔽层和上屏蔽层，以及设置在上屏蔽层和下屏蔽层之间的巨磁阻元件，包括钉扎磁性层，自由磁性层和设置在被钉扎的磁性层和自由磁性层之间的非磁性层 层。 在CPP巨磁阻磁头中，被钉扎的磁性层在高度方向上延伸到非磁性层的后部和自由磁性层，并且被钉扎的磁性层在高度方向上的尺寸大于轨道宽度方向上的尺寸 。 此外，钉扎磁性层包括具有正的磁致伸缩常数的磁性材料或具有高矫顽力的磁性材料，并且被钉扎的磁性层的端部在面向记录介质的表面上暴露。

公开(公告)号：US07220499B2

公开(公告)日：2007-05-22

申请号：US10823484

申请日：2004-04-13

申请人： Masamichi Saito ,  Yoshihiro Nishiyama ,  Yosuke Ide ,  Eiji Umetsu ,  Naoya Hasegawa ,  Yasuo Hayakawa

发明人： Masamichi Saito ,  Yoshihiro Nishiyama ,  Yosuke Ide ,  Eiji Umetsu ,  Naoya Hasegawa ,  Yasuo Hayakawa

IPC分类号： G11B5/127

CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G01R33/093 ,  G11B5/3929 ,  G11B2005/3996 ,  H01F10/3218 ,  H01F10/3263 ,  H01F10/3272 ,  Y10T428/1121 ,  Y10T428/1143 ,  Y10T428/1171 ,  Y10T428/1193

摘要： A CPP giant magnetoresistive head includes lower and upper shield layers with a predetermined distance therebetween, and a giant magnetoresistive element (GMR) including pinned and free magnetic layers disposed between the upper and lower shield layers with a nonmagnetic layer interposed between the pinned and free magnetic layers. A current flows perpendicularly to the film plane of the GMR. The magnetoresistive head further includes an antiferromagnetic layer (an insulating AF of Ni—O or α-Fe2O3) provided in the rear of the GMR in a height direction to make contact with the upper or lower surface of a rear portion of the pinned magnetic layer which extends in the height direction, and an exchange coupling magnetic field is produced at the interface with the upper or lower surface, so that the magnetization direction of the pinned magnetic layer is pinned by the exchange coupling magnetic field in the height direction.

摘要翻译： CPP巨磁阻头包括其间具有预定距离的下屏蔽层和上屏蔽层，以及包括固定和自由磁性层的巨磁阻元件（GMR），其设置在上屏蔽层和下屏蔽层之间，其中非磁性层插入在固定和自由磁性层之间 层。 A电流垂直于GMR的膜平面流动。 磁阻头还包括设置在GMR后部的反铁磁层（Ni-O或α-Fe 2 O 3 3 3的绝缘AF），其高度方向为 与在高度方向上延伸的被钉扎磁性层的后部的上表面或下表面接触，并且在与上表面或下表面的界面处产生交换耦合磁场，使得固定的磁化方向 磁性层被高度方向的交换耦合磁场固定。

公开(公告)号：US06757962B2

公开(公告)日：2004-07-06

申请号：US10013242

申请日：2001-12-10

申请人： Naoya Hasegawa ,  Eiji Umetsu ,  Masamichi Saito ,  Kenichi Tanaka ,  Yosuke Ide

发明人： Naoya Hasegawa ,  Eiji Umetsu ,  Masamichi Saito ,  Kenichi Tanaka ,  Yosuke Ide

IPC分类号： H04R3100

CPC分类号： B82Y25/00 ,  B82Y10/00 ,  B82Y40/00 ,  G01R33/093 ,  G11B5/3163 ,  G11B5/3903 ,  G11B5/3967 ,  H01F41/308 ,  H01F41/325 ,  Y10T29/49032 ,  Y10T29/49034 ,  Y10T29/49041 ,  Y10T29/49044 ,  Y10T29/49046 ,  Y10T29/49048

摘要： In a method for manufacturing a magnetic field sensing element including an electrode layer overlying a second antiferrogmagnetic layer and a first free magnetic layer where the electrode layer exposes a portion of the second magnetic layer, a portion of the second antiferromagnetic layer not covered with the electrode layer and a portion of the first free magnetic layer are removed using the electrode layer as a mask after laminating each layer to form a bottom type spin-valve thin film magnetic element, thereby enabling the first free magnetic layer to be endowed with a sufficient exchange coupling magnetic field by substantially eliminating the tapered portion of the remaining second antiferromagnetic layer thereby enabling the magnetization of the second free magnetic layer to be put into a single domain state.

摘要翻译： 在制造磁场感测元件的方法中，包括覆盖第二反铁磁层的电极层和第一自由磁性层，其中电极层暴露第二磁性层的一部分，第二反铁磁层的一部分未被电极覆盖 在层叠各层之后，使用电极层作为掩模去除第一自由磁性层的一部分和第一自由磁性层的一部分，从而形成底部型自旋阀薄膜磁性元件，从而能够赋予第一自由磁性层充分的交换 通过基本上消除剩余的第二反铁磁性层的锥形部分来耦合磁场，从而使得第二自由磁性层的磁化能够进入单一畴状态。

公开(公告)号：US06893734B2

公开(公告)日：2005-05-17

申请号：US10017301

申请日：2001-12-14

申请人： Naoya Hasegawa ,  Eiji Umetsu ,  Masamichi Saito ,  Kenichi Tanaka ,  Yosuke Ide

发明人： Naoya Hasegawa ,  Eiji Umetsu ,  Masamichi Saito ,  Kenichi Tanaka ,  Yosuke Ide

IPC分类号： G01R33/09 ,  G11B5/39

CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G01R33/093 ,  G11B5/3903 ,  G11B2005/3996 ,  Y10T428/1171 ,  Y10T428/12465 ,  Y10T428/12646 ,  Y10T428/12931 ,  Y10T428/12986 ,  Y10T428/24479 ,  Y10T428/265

摘要： A magnetic sensing element includes a laminate, the laminate including a first antiferromagnetic layer; a pinned magnetic layer, the magnetization direction thereof being pinned by the first antiferromagnetic layer; a nonmagnetic conductive layer; a free magnetic layer, the magnetization direction thereof being variable in response to an external magnetic field; a nonmagnetic interlayer; a ferromagnetic layer; and a second antiferromagnetic layer. The laminate has a recess extending through the second antiferromagnetic layer and the ferromagnetic layer, a bottom face of the recess lying in the nonmagnetic interlayer, the width of the bottom face in a track width direction being equal to a track width. The free magnetic layer is magnetized in a direction substantially orthogonal to the magnetization direction of the pinned magnetic layer as a result of magnetic coupling with the ferromagnetic layer. A method for making such a magnetic sensing element is also disclosed.

摘要翻译： 磁传感元件包括层压体，层压体包括第一反铁磁性层; 被钉扎的磁性层，其磁化方向由第一反铁磁层固定; 非磁性导电层; 自由磁性层，其磁化方向响应于外部磁场而变化; 非磁性中间层; 铁磁层; 和第二反铁磁层。 层压体具有延伸穿过第二反铁磁层和铁磁层的凹部，位于非磁性中间层中的凹部的底面，轨道宽度方向上的底面的宽度等于轨道宽度。 由于与铁磁层的磁耦合，自由磁性层在与被钉扎的磁性层的磁化方向大致正交的方向上被磁化。 还公开了一种用于制造这种磁传感元件的方法。