Heating soft floor mat
    1.
    发明授权
    Heating soft floor mat 失效
    加热软地板垫

    公开(公告)号:US4817707A

    公开(公告)日:1989-04-04

    申请号:US99018

    申请日:1987-09-21

    IPC分类号: F24D3/16 F28F21/06 F28F1/00

    摘要: A heating soft floor mat is described comprising a base sheet composed of a thermoplastic resin foamed article as a heat insulating layer having meanderingly formed thereon grooves for conduits, conduits for heating medium disposed in the grooves, and cover material having flexibility covering the surface side thereof, wherein the thermoplastic resin foamed article is a crosslinked polyethylene foamed article containing closed cells having a degree of expansion of from 10 to 40 and the conduits are composed of low density crosslinked polyethylene having a density of less than 0.910 g/cm.sup.3.

    摘要翻译: 一种加热软地板垫被描述为包括由热塑性树脂发泡制品构成的基片,作为隔热层,其上形成有用于导管的沟槽,用于设置在槽中的加热介质导管,以及覆盖其表面侧的柔性的覆盖材料 其中,所述热塑性树脂发泡体是包含膨胀度为10〜40的闭孔的交联聚乙烯发泡体,所述导管由密度小于0.910g / cm 3的低密度交联聚乙烯构成。

    CERAMICS FOR PLASMA TREATMENT APPARATUS
    3.
    发明申请
    CERAMICS FOR PLASMA TREATMENT APPARATUS 审中-公开
    等离子体处理设备的陶瓷

    公开(公告)号:US20100069227A1

    公开(公告)日:2010-03-18

    申请号:US12557656

    申请日:2009-09-11

    IPC分类号: C04B35/50

    摘要: The present invention provides ceramics for a plasma-treatment apparatus which are excellent in corrosion resistance against a halogen-type corrosive gas, plasma, etc., attain reduction in resistance, and inhibit impurity metal contamination caused by composition materials of these ceramics even in a halogen plasma process, and which can be used suitably for the component of the plasma-treatment apparatus for manufacturing a semiconductor, a liquid crystal, etc. The ceramics are used which are prepared in such a way that 3% by weight to 30% by weight of a cerium oxide relative to yttria and 3% by weight to 50% by weight of niobium pentoxide relative to yttria are added to yttria, which are fired in a reducing atmosphere to have an open porosity of 1.0% or less.

    摘要翻译: 本发明提供了一种用于等离子体处理装置的陶瓷,其对于卤素型腐蚀性气体,等离子体等的耐腐蚀性优异,电阻降低,并且抑制由这些陶瓷的组成材料引起的杂质金属污染,即使在 卤素等离子体工艺,其可以适用于半导体制造用等离子体处理装置的部件,液晶等。使用这样的陶瓷,其制造方法为将3重量%〜30重量% 将氧化钇相对于氧化钇的重量和相对于氧化钇的3重量%〜50重量%的五氧化二铌添加到氧化钇中,氧化钇在还原气氛中烧成,开放孔隙率为1.0%以下。