公开(公告)号：US5561606A

公开(公告)日：1996-10-01

申请号：US538467

申请日：1995-10-03

申请人： Kazuya Ota ,  Masaharu Kawakubo ,  Kenji Nishi

发明人： Kazuya Ota ,  Masaharu Kawakubo ,  Kenji Nishi

IPC分类号： G03F9/00 ,  H01L21/78

CPC分类号： G03F9/7003

摘要： Plural shot areas arranged in succession in a two-dimensional array on a substrate are aligned to a predetermined reference position in a fixed coordinate system. At least three of the plural shot areas are selected as specified shot areas. Coordinate values (positions) of alignment marks associated, respectively, with the specified shot areas are measured. Anticipated coordinate values are calculated from preset coordinate values, based on an array model of the shot areas, predetermined by a first equation. A unique relation defined by a second equation is assumed, between the anticipated coordinate values and actual coordinate values in the alignment. Parameters of the relation are determined so as to minimize the average error between the measured coordinate values and coordinate values calculated from the relation. Actual coordinate values of the shot areas on the substrate are calculated based on the parameters and the anticipated coordinate values.

摘要翻译： 在基板上连续排列成二维阵列的多个喷射区域与固定坐标系中的预定基准位置对准。 选择多个拍摄区域中的至少三个作为指定的拍摄区域。 测量与指定拍摄区域相关联的对准标记的坐标值（位置）。 基于由第一等式预定的拍摄区域的阵列模型，从预设坐标值计算预期坐标值。 假设在第二方程中定义的独特关系，在对准中的预期坐标值和实际坐标值之间。 确定关系的参数，以使得测量的坐标值与根据该关系计算的坐标值之间的平均误差最小化。 基于参数和预期坐标值计算基板上的拍摄区域的实际坐标值。

公开(公告)号：US6141107A

公开(公告)日：2000-10-31

申请号：US561158

申请日：1995-11-21

申请人： Kenji Nishi ,  Nobutaka Magome ,  Masaharu Kawakubo

发明人： Kenji Nishi ,  Nobutaka Magome ,  Masaharu Kawakubo

IPC分类号： G03F9/00 ,  G01N11/00

CPC分类号： G03F9/7069 ,  G03F9/7088 ,  G03F9/7092

摘要： The relative positions of an alignment mark on a wafer and index marks on an index plate within an optical system are detected by image processing. The index marks are illuminated by an illuminating light which is independent of an illuminating light for the wafer mark. An image of the wafer mark by a return light from the wafer and images of the index marks by the independent illuminating light are simultaneously picked up by a CCD image pickup device and the position of the first mark is detected from a combined image of these images by image processing.

摘要翻译： 通过图像处理来检测晶片上的对准标记和光学系统内的折射板上的折射标记的相对位置。 索引标记由独立于晶片标记的照明光的照明光照射。 通过独立照明光的来自晶片的返回光的晶片标记的图像和由CCD图像拾取装置同时拾取的索引标记的图像，并且从这些图像的组合图像中检测第一标记的位置 通过图像处理。

公开(公告)号：US06219130B1

公开(公告)日：2001-04-17

申请号：US09597153

申请日：2000-06-20

申请人： Masaharu Kawakubo

发明人： Masaharu Kawakubo

IPC分类号： G03B2754

CPC分类号： G03F9/7088

摘要： A position detecting apparatus is used with an exposure apparatus for projecting a mask pattern onto a substrate. The position detecting apparatus detects a position of an alignment mark formed on the substrate by sending light through a film having a wavelength-selective feature. The position detecting apparatus comprises a light sending system for emitting the position detecting light, a wavelength changing means for adjusting a wavelength band of the position detecting light directed onto the alignment mark, on the basis of the wavelength transmittance of the film having the wavelength-selective feature, and a light receiving system for detecting the light from the alignment mark. The position of the alignment mark can be determined on the basis of a photoelectric conversion signal outputted from the light receiving system.

摘要翻译： 位置检测装置与用于将掩模图案投影到基板上的曝光装置一起使用。 位置检测装置通过发射具有波长选择特征的膜来检测形成在基板上的对准标记的位置。 位置检测装置包括用于发射位置检测光的发光系统，用于根据具有波长范围的膜的波长透射率来调整被引导到对准标记上的位置检测光的波长带的波长改变装置， 选择性特征，以及用于检测来自对准标记的光的光接收系统。 可以基于从光接收系统输出的光电转换信号来确定对准标记的位置。

公开(公告)号：US5760411A

公开(公告)日：1998-06-02

申请号：US720177

申请日：1996-09-25

申请人： Masaharu Kawakubo

发明人： Masaharu Kawakubo

IPC分类号： G03F7/20 ,  G03F9/00 ,  H01L21/027 ,  H01L21/78 ,  G01B11/26

CPC分类号： G03F7/70425 ,  G03F9/70

摘要： Two laser beams with a frequency difference are applied to a wafer mark on a wafer from an LIA (Laser Interferometric Alignment) system through a projection optical system, and diffracted light beams generated from the wafer mark are received by first to third light-receiving devices, respectively, in the LIA. The first light-receiving device receives first interference light comprising .+-.1st-order diffracted light beams (first processing mode). The second and third light-receiving devices respectively receive second and third interference lights comprising zeroth-order light and 2nd-order diffracted light (second processing mode). Alignment is effected by using either of the two processing modes which gives better measurement reproducibility.

摘要翻译： 具有频差的两个激光束通过投影光学系统从LIA（激光干涉校准）系统施加到晶片上的晶片标记，并且从晶片标记产生的衍射光束被第一至第三光接收装置 ，分别在LIA。 第一光接收装置接收包括+/- 1次衍射光束的第一干涉光（第一处理模式）。 第二和第三光接收装置分别接收包括零级光和二次衍射光的第二和第三干涉光（第二处理模式）。 通过使用提供更好的测量再现性的两种处理模式中的任一种来实现对准。

公开(公告)号：US08605248B2

公开(公告)日：2013-12-10

申请号：US11915504

申请日：2006-05-24

申请人： Masaharu Kawakubo

发明人： Masaharu Kawakubo

IPC分类号： G03B27/68

CPC分类号： G03F7/70458 ,  G03F7/70425

摘要： In the case where the previous process (X) and the previous process (Y) are different in step 310, only a distortion amount in an X-axis direction is extracted from image distortion data of the previous process (X) in Step 316 and only a distortion amount in a Y-axis direction is extracted from image distortion data of the previous process (Y) in Step 318, and then in Step 320, image distortion data is created by synthesizing the extracted distortion amounts, and the synthesized image distortion data is used for subsequent adjustment of projected images. With this operation, the distortion of projected images can be adjusted per axis and accordingly overlay exposure with high accuracy can be realized.

摘要翻译： 在步骤310中，前一处理（X）和前一处理（Y）不同的情况下，仅在步骤316中从先前处理（X）的图像失真数据中提取X轴方向上的失真量，并且 在步骤318中仅从先前处理（Y）的图像失真数据中提取Y轴方向的失真量，然后在步骤320中，通过合成提取的失真量和合成图像失真来创建图像失真数据 数据用于随后调整投影图像。 通过该操作，可以每轴调整投影图像的变形，并且可以实现高精度的重叠曝光。

公开(公告)号：US5654553A

公开(公告)日：1997-08-05

申请号：US630852

申请日：1996-04-11

申请人： Masaharu Kawakubo ,  Masahiko Okumura

发明人： Masaharu Kawakubo ,  Masahiko Okumura

IPC分类号： G03F7/20 ,  G03F9/00 ,  G01N21/86 ,  G11B7/00 ,  G11B11/03 ,  G03B27/53

CPC分类号： G03F7/70066 ,  G03F7/70241 ,  G03F9/70

摘要： A projection exposure apparatus according to the present invention comprises a projection optical system for projecting a pattern of a mask onto each of exposure areas on a photosensitive substrate, and a mark detection system of off-axis type spaced apart from the projection optical system by a predetermined distance. According to one aspect of the present invention, the projection exposure apparatus includes a calculating means for determining an offset amount of an imaging position of the projection optical system and an offset amount of a best focus position of the mark detection system of off-axis type on the basis of the amount of change of an environmental condition to which the projection optical system and the mark detection system are subjected. The detection of a positioning mark on the substrate is performed after a surface of the substrate at a position of the mark detection system is aligned with the best focus position, in consideration of the offset amounts. According to another aspect of the present invention, the projection exposure apparatus includes an inclination amount measuring means for determining an inclination amount of the surface of the substrate. The detection of the positioning mark on the substrate is performed after the inclination is eliminated or after the surface of the substrate at the position of the mark detection system is aligned with the best focus position in consideration of the inclination amount.

摘要翻译： 根据本发明的投影曝光装置包括：投影光学系统，用于将光敏图案的图案投影到感光基板上的每个曝光区域;以及偏离轴类型的标记检测系统，其与投影光学系统间隔开 预定距离。 根据本发明的一个方面，投影曝光装置包括：计算装置，用于确定投影光学系统的成像位置的偏移量和离轴型的标记检测系统的最佳聚焦位置的偏移量 基于投影光学系统和标记检测系统所经受的环境条件的变化量。 考虑到偏移量，在标记检测系统的位置处的基板的表面与最佳聚焦位置对准之后，执行基板上的定位标记的检测。 根据本发明的另一方面，投影曝光装置包括用于确定基板的表面的倾斜量的倾斜量测量装置。 在消除了倾斜之后或在标记检测系统的位置处的基板的表面考虑到倾斜量与最佳聚焦位置对准之后，执行基板上的定位标记的检测。

公开(公告)号：US06876946B2

公开(公告)日：2005-04-05

申请号：US10299819

申请日：2002-11-20

申请人： Masahiko Yasuda ,  Osamu Furukawa ,  Masaharu Kawakubo ,  Hiroki Tateno ,  Nobutaka Magome

发明人： Masahiko Yasuda ,  Osamu Furukawa ,  Masaharu Kawakubo ,  Hiroki Tateno ,  Nobutaka Magome

IPC分类号： G03F9/00 ,  G03B27/42

CPC分类号： G03F9/7003

摘要： A method of transferring a pattern of a mask onto shot areas on a substrate determines two sets of parameters in a single model equation. The parameters in one of the two sets relate to arrangement of a plurality of shot areas on the substrate, and the parameters in the other set relate to the shot areas per se. The mask and the substrate are moved relatively in accordance with the determined parameters.

摘要翻译： 将掩模的图案转移到基板上的拍摄区域的方法在单个模型方程式中确定两组参数。 两组之一中的参数涉及衬底上的多个照射区域的布置，而另一组中的参数涉及拍​​摄区域本身。 掩模和基板根据确定的参数相对移动。

公开(公告)号：US6163366A

公开(公告)日：2000-12-19

申请号：US968422

申请日：1997-11-12

申请人： Hiroki Okamoto ,  Masaharu Kawakubo ,  Shinji Mizutani

发明人： Hiroki Okamoto ,  Masaharu Kawakubo ,  Shinji Mizutani

IPC分类号： G03F7/20 ,  G03F9/00 ,  G03B27/32

CPC分类号： G03F7/70458 ,  G03F7/70883 ,  G03F9/7003

摘要： In the exposure method and apparatus, the distortion data of the projection lens in each exposure unit itself has already been known for each exposure unit. Accordingly, when the exposure unit which formed the alignment target layer has already been known, the known data of this exposure unit is used to correct at least one of the projection magnification and shot rotation determined according to multipoint EGA operation, and the exposure apparatus is adjusted by the amount of this correction. When the exposure unit forming the alignment target layer is unknown, the alignment mark exposure unit is specified from the state of distribution of non-linear error computed from the alignment mark measured values within a shot. Under thus determined correct projection magnification and shot rotation, a shot area is accurately overlaid with and exposed to a reticle pattern.

摘要翻译： 在曝光方法和装置中，每个曝光单元本身已经知道投影透镜的失真数据。 因此，当形成对准目标层的曝光单元已经知道时，该曝光单元的已知数据用于校正根据多点EGA操作确定的投影倍率和镜头旋转中的至少一个，曝光装置 根据这个修正量调整。 当形成对准目标层的曝光单元是未知的时，从对准标记测量值内的非线性误差的分布状态来指定对准标记曝光单元。 在如此确定的正确的投影放大和拍摄旋转下，拍摄区域被准确地覆盖并暴露于标线图案。

公开(公告)号：US5863680A

公开(公告)日：1999-01-26

申请号：US728367

申请日：1996-10-10

申请人： Masaharu Kawakubo ,  Ryoichi Kaneko

发明人： Masaharu Kawakubo ,  Ryoichi Kaneko

IPC分类号： G03F7/20 ,  G03F9/00 ,  H01L21/027

CPC分类号： G03F7/70633 ,  G03F7/20 ,  G03F9/7046

摘要： Disclosed is an exposure method for exposing an image of a pattern formed on a mask to plural layers superimposed upon a substrate, comprising: the step of storing an alignment error between the plural layers together with at least one of exposure data and alignment data; the step of setting alignment data upon exposing another pattern to the substrate on the basis of at least one of the exposure data and alignment data; and the step of displacing the mask and the substrate relative to each other on the basis of the alignment data set in the previous step. There is further disclosed an exposure apparatus for exposing an image of a pattern formed on a mask to plural layers superimposed upon a substrate, comprising a storage for storing alignment errors between the plural exposure layers together with at least one of exposure data and alignment data; and a control unit connected to the storage for setting alignment data upon exposing another pattern to the substrate on the basis of at least one of the exposure data and alignment data; wherein the control unit controls the mask and the substrate so as to be displaced relative to each other on the basis of the alignment data set.

摘要翻译： 公开了一种曝光方法，用于将形成在掩模上的图案的图像曝光到叠加在基板上的多个层，包括：将多个层之间的对准误差与曝光数据和对准数据中的至少一个一起存储的步骤; 基于曝光数据和对准数据中的至少一个，将对准数据曝光到基板上的步骤; 以及基于在前一步骤中设置的对准数据相对于彼此移动掩模和基板的步骤。 还公开了一种用于将形成在掩模上的图案的图像曝光到叠加在基板上的多个层的曝光装置，包括用于存储多个曝光层之间的对准误差的存储器以及曝光数据和对准数据中的至少一个; 以及控制单元，连接到所述存储器，用于基于所述曝光数据和对准数据中的至少一个将另一图案暴露于所述基板来设置对准数据; 其中所述控制单元基于所述对准数据集来控制所述掩模和所述基板以相对于彼此移位。

公开(公告)号：US08130362B2

公开(公告)日：2012-03-06

申请号：US11662725

申请日：2005-09-12

申请人： Masaharu Kawakubo

发明人： Masaharu Kawakubo

IPC分类号： G03B27/42 ,  G03B27/58 ,  G03B27/32 ,  G03B27/68

CPC分类号： G03F9/7003 ,  G03F7/70633

摘要： At Step 602, the grid of a wafer loaded into an exposure apparatus is approximated by a mathematical function fitting up to, for example, a cubic function, and at Step 612, the magnitude of a residual error between the position of a sample shot area obtained by the function and an actually measured position is compared with a predetermined threshold value. GCM measurement is performed in a mathematical function mode in a subroutine 616, or it is performed in a map mode in a subroutine 616, on the basis of the result of the comparison. In addition, it is determined whether to extract non-linear components from the wafer in each lot on the basis of a variation in the temperature of the wafer (Step 622) and a variation in random error between the wafers (Step 624).

摘要翻译： 在步骤602中，装载到曝光装置中的晶片的栅格通过拟合为例如三次函数的数学函数来近似，并且在步骤612处，采样拍摄区域的位置之间的残余误差的大小 将通过该功能获得的实际测量位置与预定阈值进行比较。 基于比较结果，在子程序616中以数学函数模式进行GCM测量，或者以子程序616中的映射模式执行GCM测量。 此外，根据晶片的温度变化（步骤622）和晶片之间的随机误差的变化，确定是否从每个批次中的晶片提取非线性分量（步骤624）。