公开(公告)号：US20230298863A1

公开(公告)日：2023-09-21

申请号：US17931230

申请日：2022-09-12

Applicant: Kioxia Corporation

Inventor： Yusuke KASAHARA

IPC: H01J37/32 ,  H01L21/3065

CPC classification number: H01J37/32449 ,  H01J37/32522 ,  H01J37/32862 ,  H01L21/3065 ,  H01J2237/002 ,  H01J2237/3341

Abstract: A semiconductor manufacturing apparatus of embodiments includes: a chamber including a top plate and a sidewall; a holder provided in the chamber holding a substrate; a first high frequency power supply applying high frequency power to the holder or the top plate; a second high frequency power supply applying high frequency power to the holder; a third high frequency power supply applying high frequency power to the top plate; a gas supply pipe supplying a gas to the chamber; and a gas discharge pipe discharging a gas from the chamber.

公开(公告)号：US20210280431A1

公开(公告)日：2021-09-09

申请号：US17010989

申请日：2020-09-03

Applicant: Kioxia Corporation

Inventor： Yusuke KASAHARA

IPC: H01L21/311 ,  H01L21/02 ,  H01L27/11582

Abstract: In a pattern formation method, a first organic film is formed on a film to be etched and contains a metal. A second organic film is formed on the first organic film, and has a higher density than a density of the first organic film. The first and second organic films are patterned to form a mask, and the film to be etched is etched using the mask.

公开(公告)号：US20240097044A1

公开(公告)日：2024-03-21

申请号：US18456419

申请日：2023-08-25

Applicant: Kioxia Corporation

Inventor： Yusuke KASAHARA ,  Kappei IMAMURA ,  Akifumi GAWASE ,  Shinji MORI ,  Akihiro KAJITA

IPC: H01L29/786 ,  H01L29/417 ,  H10B12/00

CPC classification number: H01L29/78696 ,  H01L29/41733 ,  H01L29/78642 ,  H01L29/7869 ,  H10B12/05 ,  H10B12/33

Abstract: According to one embodiment, a semiconductor device includes a first conductive layer between first and second insulating layers with an oxide semiconductor column extending in the first direction through these layers. A third insulating layer covers the column. The column has a first semiconductor portion at a first position matching the first insulating layer, a second semiconductor portion at a second position matching second insulating layer, and a third semiconductor portion at a third position matching the first conductive layer. The first semiconductor portion is continuous along a second direction between the third insulating layer, the second semiconductor portion is continuous along the second direction between the third insulating layer, but the third semiconductor portion is not continuous between the third insulating layer.

公开(公告)号：US20220301872A1

公开(公告)日：2022-09-22

申请号：US17465485

申请日：2021-09-02

Applicant: Kioxia Corporation

Inventor： Yusuke KASAHARA

IPC: H01L21/033 ,  G03F7/00 ,  H01L21/027

Abstract: A pattern forming method includes: forming a first film on a first region of a processing target film; forming a second film containing metal and carbon and different from the first film, on a second region of the processing target film; etching the first film; and etching the processing target film using the first film after the etching while the second film is exposed.