公开(公告)号：US20220005740A1

公开(公告)日：2022-01-06

申请号：US17291488

申请日：2019-11-07

Applicant: LAM RESEARCH CORPORATION

Inventor： Dong Woo PAENG ,  Yunsang KIM ,  He ZHANG

IPC: H01L21/66 ,  H01L21/3065 ,  H01L21/268 ,  H01J37/32 ,  H05B3/00 ,  B23K26/362 ,  B23K26/073

Abstract: A substrate processing system includes a processing chamber, a substrate support, a heat source, a gas delivery system and a controller. The substrate support is disposed in the processing chamber and supports a substrate. The heat source heats the substrate. The gas delivery system supplies a process gas to the processing chamber. The controller controls the gas delivery system and the heat source to iteratively perform an isotropic atomic layer etch process including: during an iteration of the isotropic atomic layer etch process, performing pretreatment, atomistic adsorption, and pulsed thermal annealing; during the atomistic adsorption, exposing a surface of the substrate to the process gas including a halogen species that is selectively adsorbed onto an exposed material of the substrate to form a modified material; and during the pulsed thermal annealing, pulsing the heat source multiple times within a predetermined period to expose and remove the modified material.

公开(公告)号：US20130299089A1

公开(公告)日：2013-11-14

申请号：US13943653

申请日：2013-07-16

Applicant: Lam Research Corporation

Inventor： Yunsang KIM ,  Andrew BAILEY, III ,  Jack CHEN

IPC: H01L21/02

CPC classification number: H01L21/02041 ,  H01L21/02087 ,  H01L21/31116 ,  H01L21/31138 ,  H01L21/67069 ,  H01L21/6833

Abstract: An apparatus for etching a bevel edge of a substrate includes a bevel etch chamber and a controller including non-transitory computer readable media. The computer readable media includes computer readable code for providing a cleaning gas comprising at least one of a CO2 or CO, computer readable code for forming a cleaning plasma from the cleaning gas, and computer readable code for cleaning the bevel edge with the cleaning plasma, including computer readable code for placing the gas distribution plate at a close distance from a top surface of the substrate such that the cleaning plasma is not formed between the gas distribution plate and the substrate during the bevel edge cleaning, the bevel edge exposed to the cleaning plasma including at least an edge portion of a top surface at an edge of the substrate.

Abstract translation: 用于蚀刻衬底的斜边缘的设备包括斜面蚀刻室和包括非瞬态计算机可读介质的控制器。 计算机可读介质包括用于提供清洁气体的计算机可读代码，所述清洁气体包括CO 2或CO中的至少一种，用于从清洁气体形成清洁等离子体的计算机可读代码以及用清洁等离子体清洁斜面边缘的计算机可读代码， 包括用于将气体分配板放置在离基板顶表面较近距离处的计算机可读代码，使得在斜边清洁期间在气体分配板和基板之间不形成清洁等离子体，暴露于清洁的斜边 等离子体包括在衬底的边缘处的顶表面的至少边缘部分。

公开(公告)号：US20180233365A1

公开(公告)日：2018-08-16

申请号：US15889828

申请日：2018-02-06

Applicant: Lam Research Corporation

Inventor： Yunsang KIM ,  Hyuk-Jun KWON

IPC: H01L21/223 ,  H01L29/167 ,  H01L21/324 ,  H01L21/67

CPC classification number: H01L21/2236 ,  H01J37/00 ,  H01L21/0217 ,  H01L21/0228 ,  H01L21/324 ,  H01L21/67017 ,  H01L21/67109 ,  H01L21/67115 ,  H01L29/167

Abstract: A method for forming a junction in a germanium (Ge) layer of a substrate includes arranging the substrate in a processing chamber. The method includes performing a plasma pretreatment on the substrate in the processing chamber for a predetermined pretreatment period using a pretreatment plasma gas mixture including hydrogen gas species. The method includes supplying a doping plasma gas mixture to the processing chamber including a phosphorous (P) gas species and an antimony (Sb) gas species. The method includes striking plasma in the processing chamber for a predetermined doping period. The method includes annealing the substrate during a predetermined annealing period to form the junction in the germanium (Ge) layer.

公开(公告)号：US20180218915A1

公开(公告)日：2018-08-02

申请号：US15876576

申请日：2018-01-22

Applicant: Lam Research Corporation

Inventor： Yunsang KIM ,  Hyuk-Jun KWON ,  Dong Woo PAENG ,  He ZHANG

IPC: H01L21/3065 ,  H01L21/324 ,  H01L21/02 ,  H01L21/67

CPC classification number: H01L21/3065 ,  H01J37/00 ,  H01L21/02236 ,  H01L21/30655 ,  H01L21/324 ,  H01L21/67069

Abstract: A method for isotropically etching film on a substrate with atomic layer control includes a) providing a substrate including a material selected from a group consisting of silicon (Si), germanium (Ge) and silicon germanium (SiGe). The method includes b) depositing a sacrificial layer on the material in a processing chamber by: cooling a lower portion of the substrate; one of creating or supplying an oxidant-containing plasma in the processing chamber; and increasing a surface temperature of the substrate for a predetermined period using rapid thermal heating while creating or supplying the oxidant-containing plasma in the processing chamber. The method includes c) purging the processing chamber. The method includes d) etching the sacrificial layer and the material by supplying an etch gas mixture and striking plasma in the processing chamber.

公开(公告)号：US20220084838A1

公开(公告)日：2022-03-17

申请号：US17419841

申请日：2020-01-07

Applicant: LAM RESEARCH CORPORATION

Inventor： He ZHANG ,  Yunsang KIM ,  Dong Woo PAENG

IPC: H01L21/3213 ,  H01L21/67

Abstract: An ALE system for performing a metal ALE process to etch a surface of a substrate includes a processing chamber, a substrate support, a heat source, a delivery system, and a controller. The substrate support is disposed in the processing chamber and supports the substrate. The delivery system supplies a ligand or organic species to the processing chamber. The controller controls the delivery system and the heat source to perform an isotropic metal ALE process that includes: during an iteration of the isotropic metal ALE process, performing atomistic adsorption and pulsed thermal annealing; during the atomistic adsorption, exposing the surface to the ligand or organic species, where the ligand or organic species is void of a metal precursor and is selectively adsorbed to form a metal complex in the surface; and during the pulsed thermal annealing, pulsing the heat source multiple times to remove the metal complex from the substrate.

公开(公告)号：US20200020537A1

公开(公告)日：2020-01-16

申请号：US16578985

申请日：2019-09-23

Applicant: Lam Research Corporation

Inventor： Yunsang KIM ,  Hyuk-Jun Kwon

IPC: H01L21/223 ,  H01L21/67 ,  H01L21/324 ,  H01L29/167 ,  H01J37/00

Abstract: A method for forming a junction in a germanium (Ge) layer of a substrate includes arranging the substrate in a processing chamber. The method includes performing a plasma pretreatment on the substrate in the processing chamber for a predetermined pretreatment period using a pretreatment plasma gas mixture including hydrogen gas species. The method includes supplying a doping plasma gas mixture to the processing chamber including a phosphorous (P) gas species and an antimony (Sb) gas species. The method includes striking plasma in the processing chamber for a predetermined doping period. The method includes annealing the substrate during a predetermined annealing period to form the junction in the germanium (Ge) layer.