公开(公告)号：US20180218915A1

公开(公告)日：2018-08-02

申请号：US15876576

申请日：2018-01-22

Applicant: Lam Research Corporation

Inventor： Yunsang KIM ,  Hyuk-Jun KWON ,  Dong Woo PAENG ,  He ZHANG

IPC: H01L21/3065 ,  H01L21/324 ,  H01L21/02 ,  H01L21/67

CPC classification number: H01L21/3065 ,  H01J37/00 ,  H01L21/02236 ,  H01L21/30655 ,  H01L21/324 ,  H01L21/67069

Abstract: A method for isotropically etching film on a substrate with atomic layer control includes a) providing a substrate including a material selected from a group consisting of silicon (Si), germanium (Ge) and silicon germanium (SiGe). The method includes b) depositing a sacrificial layer on the material in a processing chamber by: cooling a lower portion of the substrate; one of creating or supplying an oxidant-containing plasma in the processing chamber; and increasing a surface temperature of the substrate for a predetermined period using rapid thermal heating while creating or supplying the oxidant-containing plasma in the processing chamber. The method includes c) purging the processing chamber. The method includes d) etching the sacrificial layer and the material by supplying an etch gas mixture and striking plasma in the processing chamber.

公开(公告)号：US20220084838A1

公开(公告)日：2022-03-17

申请号：US17419841

申请日：2020-01-07

Applicant: LAM RESEARCH CORPORATION

Inventor： He ZHANG ,  Yunsang KIM ,  Dong Woo PAENG

IPC: H01L21/3213 ,  H01L21/67

Abstract: An ALE system for performing a metal ALE process to etch a surface of a substrate includes a processing chamber, a substrate support, a heat source, a delivery system, and a controller. The substrate support is disposed in the processing chamber and supports the substrate. The delivery system supplies a ligand or organic species to the processing chamber. The controller controls the delivery system and the heat source to perform an isotropic metal ALE process that includes: during an iteration of the isotropic metal ALE process, performing atomistic adsorption and pulsed thermal annealing; during the atomistic adsorption, exposing the surface to the ligand or organic species, where the ligand or organic species is void of a metal precursor and is selectively adsorbed to form a metal complex in the surface; and during the pulsed thermal annealing, pulsing the heat source multiple times to remove the metal complex from the substrate.

公开(公告)号：US20220005740A1

公开(公告)日：2022-01-06

申请号：US17291488

申请日：2019-11-07

Applicant: LAM RESEARCH CORPORATION

Inventor： Dong Woo PAENG ,  Yunsang KIM ,  He ZHANG

IPC: H01L21/66 ,  H01L21/3065 ,  H01L21/268 ,  H01J37/32 ,  H05B3/00 ,  B23K26/362 ,  B23K26/073

Abstract: A substrate processing system includes a processing chamber, a substrate support, a heat source, a gas delivery system and a controller. The substrate support is disposed in the processing chamber and supports a substrate. The heat source heats the substrate. The gas delivery system supplies a process gas to the processing chamber. The controller controls the gas delivery system and the heat source to iteratively perform an isotropic atomic layer etch process including: during an iteration of the isotropic atomic layer etch process, performing pretreatment, atomistic adsorption, and pulsed thermal annealing; during the atomistic adsorption, exposing a surface of the substrate to the process gas including a halogen species that is selectively adsorbed onto an exposed material of the substrate to form a modified material; and during the pulsed thermal annealing, pulsing the heat source multiple times within a predetermined period to expose and remove the modified material.

公开(公告)号：US20210143032A1

公开(公告)日：2021-05-13

申请号：US17053110

申请日：2019-05-02

Applicant: LAM RESEARCH CORPORATION

Inventor： Dong Woo PAENG ,  Yunsang S. KIM ,  He ZHANG ,  Keith WELLS ,  Alan M. SCHOEPP

IPC: H01L21/67 ,  H01J37/32 ,  G02B27/09 ,  G02B27/30 ,  G02F1/11 ,  C23C16/455

Abstract: A substrate processing system includes a processing chamber, a substrate support, a laser, and a collimating assembly. The substrate support is disposed in the processing chamber and is configured to support a substrate. The laser is configured to generate a laser beam. The collimating assembly includes lenses or minors arranged to direct the laser beam at the substrate to heat an exposed material of the substrate. The lenses or mirrors are configured to direct the laser beam in a direction within a predetermined range of being perpendicular to a surface of the substrate.