公开(公告)号：US20150243687A1

公开(公告)日：2015-08-27

申请号：US14628444

申请日：2015-02-23

Applicant: LG Display Co., Ltd.

Inventor： Youngjang LEE ,  Kyungmo SON ,  Sohyung LEE ,  Hoyoung JUNG ,  Moonho PARK ,  Sungjin LEE

IPC: H01L27/12 ,  H01L29/786 ,  H01L27/32 ,  H01L29/04

CPC classification number: H01L27/1251 ,  H01L27/1225 ,  H01L27/1248 ,  H01L27/3244 ,  H01L29/04 ,  H01L29/78675 ,  H01L29/7869

Abstract: Provided are a thin film transistor substrate and a display using the same. A thin film transistor substrate includes: a substrate, a first thin film transistor disposed on the substrate, the first thin film transistor including: a polycrystalline semiconductor layer, a first gate electrode on the polycrystalline semiconductor layer, a first source electrode, and a first drain electrode, a second thin film transistor disposed on the substrate, the second thin film transistor including: a second gate electrode, an oxide semiconductor layer on the second gate electrode, a second source electrode, and a second drain electrode, an intermediate insulating layer including a nitride layer and an oxide layer on the nitride layer, the intermediate insulating layer being disposed on the first gate electrode and the second gate electrode and under the oxide semiconductor layer, and an etch-stopper layer disposed on the oxide semiconductor layer.

Abstract translation: 提供一种薄膜晶体管基板和使用其的显示器。 薄膜晶体管基板包括：基板，设置在基板上的第一薄膜晶体管，所述第一薄膜晶体管包括：多晶半导体层，多晶半导体层上的第一栅电极，第一源极和第一 漏电极，设置在所述基板上的第二薄膜晶体管，所述第二薄膜晶体管包括：第二栅电极，所述第二栅电极上的氧化物半导体层，第二源电极和第二漏电极，中间绝缘层 包括在所述氮化物层上的氮化物层和氧化物层，所述中间绝缘层设置在所述第一栅电极和所述第二栅电极上以及所述氧化物半导体层下方，以及设置在所述氧化物半导体层上的蚀刻停止层。

公开(公告)号：US20150243683A1

公开(公告)日：2015-08-27

申请号：US14629554

申请日：2015-02-24

Applicant: LG Display Co., Ltd.

Inventor： Youngjang LEE ,  Kyungmo SON ,  Sohyung LEE ,  Hoyoung JUNG ,  Moonho PARK ,  Sungjin LEE

IPC: H01L27/12 ,  H01L29/786 ,  H01L27/32

CPC classification number: H01L27/1229 ,  H01L27/1225 ,  H01L27/1237 ,  H01L27/124 ,  H01L27/1251 ,  H01L27/3262 ,  H01L29/7869

Abstract: Provided are a thin film transistor substrate and a display using the same. A display includes: a first thin film transistor, the first thin film transistor including: a polycrystalline semiconductor layer, a first gate electrode on the polycrystalline semiconductor layer, a first source electrode, and a first drain electrode, a second thin film transistor, the second thin film transistor including: a second gate electrode, an oxide semiconductor layer on the second gate electrode, a second source electrode, and a second drain electrode, an intermediate insulating layer including a nitride layer and an oxide layer on the nitride layer, the intermediate insulating layer being disposed on the first gate electrode and the second gate electrode and under the oxide semiconductor layer, and an etch-stopper layer disposed on the oxide semiconductor layer.

Abstract translation: 提供一种薄膜晶体管基板和使用其的显示器。 一种显示器包括：第一薄膜晶体管，第一薄膜晶体管包括：多晶半导体层，多晶半导体层上的第一栅电极，第一源电极和第一漏电极，第二薄膜晶体管， 第二薄膜晶体管，包括：第二栅电极，第二栅电极上的氧化物半导体层，第二源电极和第二漏电极，在氮化物层上包括氮化物层和氧化物层的中间绝缘层， 中间绝缘层设置在第一栅电极和第二栅电极上以及氧化物半导体层下方，以及设置在氧化物半导体层上的蚀刻停止层。