公开(公告)号：US20220190003A1

公开(公告)日：2022-06-16

申请号：US17687537

申请日：2022-03-04

Applicant: LG Display Co., Ltd.

Inventor： Youngjang LEE ,  Kyungmo SON ,  Sohyung LEE ,  Moonho PARK ,  Sungjin LEE

IPC: H01L27/12 ,  G02F1/1362 ,  G02F1/1368 ,  H01L29/786 ,  H01L27/32 ,  H01L29/04

Abstract: The present disclosure relates to a thin film transistor substrate having two different types of thin film transistors on the same substrate. A thin film transistor substrate includes a substrate; a first thin film transistor disposed on the substrate, the first thin film transistor including a poly crystalline semiconductor layer, a first gate electrode over the poly crystalline semiconductor layer, a first source electrode, and a first drain electrode; a second thin film transistor disposed on the substrate, the second thin film transistor including a second gate electrode, an oxide semiconductor layer over the second gate electrode, a second source electrode, and a second drain electrode; and an intermediate insulating layer including a nitride layer and an oxide layer on the nitride layer, the intermediate insulating layer disposed over the first gate electrode and the second gate electrode and under the oxide semiconductor layer.

公开(公告)号：US20150243683A1

公开(公告)日：2015-08-27

申请号：US14629554

申请日：2015-02-24

Applicant: LG Display Co., Ltd.

Inventor： Youngjang LEE ,  Kyungmo SON ,  Sohyung LEE ,  Hoyoung JUNG ,  Moonho PARK ,  Sungjin LEE

IPC: H01L27/12 ,  H01L29/786 ,  H01L27/32

CPC classification number: H01L27/1229 ,  H01L27/1225 ,  H01L27/1237 ,  H01L27/124 ,  H01L27/1251 ,  H01L27/3262 ,  H01L29/7869

Abstract: Provided are a thin film transistor substrate and a display using the same. A display includes: a first thin film transistor, the first thin film transistor including: a polycrystalline semiconductor layer, a first gate electrode on the polycrystalline semiconductor layer, a first source electrode, and a first drain electrode, a second thin film transistor, the second thin film transistor including: a second gate electrode, an oxide semiconductor layer on the second gate electrode, a second source electrode, and a second drain electrode, an intermediate insulating layer including a nitride layer and an oxide layer on the nitride layer, the intermediate insulating layer being disposed on the first gate electrode and the second gate electrode and under the oxide semiconductor layer, and an etch-stopper layer disposed on the oxide semiconductor layer.

Abstract translation: 提供一种薄膜晶体管基板和使用其的显示器。 一种显示器包括：第一薄膜晶体管，第一薄膜晶体管包括：多晶半导体层，多晶半导体层上的第一栅电极，第一源电极和第一漏电极，第二薄膜晶体管， 第二薄膜晶体管，包括：第二栅电极，第二栅电极上的氧化物半导体层，第二源电极和第二漏电极，在氮化物层上包括氮化物层和氧化物层的中间绝缘层， 中间绝缘层设置在第一栅电极和第二栅电极上以及氧化物半导体层下方，以及设置在氧化物半导体层上的蚀刻停止层。

公开(公告)号：US20150243689A1

公开(公告)日：2015-08-27

申请号：US14629632

申请日：2015-02-24

Applicant: LG Display Co., Ltd.

Inventor： Youngjang LEE ,  Kyungmo SON ,  Sohyung LEE ,  Moonho PARK ,  Sungjin LEE

IPC: H01L27/12

CPC classification number: H01L27/1251 ,  G02F1/13454 ,  G02F1/1368 ,  H01L27/1222 ,  H01L27/1225 ,  H01L27/1237 ,  H01L27/124

Abstract: The present disclosure relates to a thin film transistor substrate having two different types of thin film transistors on the same substrate, and a display using the same. A display includes a first thin film transistor including a poly crystalline semiconductor layer, a first gate electrode on the poly crystalline semiconductor layer, a first source electrode, and a first drain electrode; a second thin film transistor including a second gate electrode, an oxide semiconductor layer on the second gate electrode, a second source electrode, and a second drain electrode; and an intermediate insulating layer including a nitride layer and an oxide layer on the nitride layer, the intermediate insulating layer disposed on the first gate electrode and the second gate electrode and under the oxide semiconductor layer.

Abstract translation: 本公开涉及在相同基板上具有两种不同类型的薄膜晶体管的薄膜晶体管基板和使用其的显示器。 显示器包括：第一薄膜晶体管，包括多晶半导体层，多晶半导体层上的第一栅极电极，第一源电极和第一漏极电极; 第二薄膜晶体管，包括第二栅电极，第二栅电极上的氧化物半导体层，第二源电极和第二漏电极; 以及在所述氮化物层上包括氮化物层和氧化物层的中间绝缘层，所述中间绝缘层设置在所述第一栅极电极和所述第二栅电极以及所述氧化物半导体层的下方。

公开(公告)号：US20150243685A1

公开(公告)日：2015-08-27

申请号：US14628357

申请日：2015-02-23

Applicant: LG Display Co., Ltd.

Inventor： Youngjang LEE ,  Kyungmo SON ,  Seongpil CHO ,  Jaehoon PARK ,  Sohyung LEE ,  Sangsoon NOH ,  Moonho PARK ,  Sungjin LEE ,  Seunghyo KO ,  Mijin JEONG

IPC: H01L27/12 ,  H01L29/786

CPC classification number: H01L27/1251 ,  H01L27/1225 ,  H01L27/1248 ,  H01L29/78606 ,  H01L29/78675 ,  H01L29/7869

Abstract: Provided are a thin film transistor substrate and a display using the same. A thin film transistor substrate includes: a substrate, a first thin film transistor disposed at a first area of the substrate, the first thin film transistor including: a polycrystalline semiconductor layer, a first gate electrode on the polycrystalline semiconductor layer, a first source electrode, and a first drain electrode, a second thin film transistor disposed at a second area of the substrate, the second thin film transistor including: a second gate electrode, an oxide semiconductor layer on the second gate electrode, a second source electrode, and a second drain electrode, a nitride layer disposed on an area of the substrate, other than the second area, the nitride layer covering the first gate electrode, and an oxide layer disposed: over the first gate electrode and the second gate electrode, and under the oxide semiconductor layer.

Abstract translation: 提供一种薄膜晶体管基板和使用其的显示器。 薄膜晶体管基板包括：基板，设置在基板的第一区域的第一薄膜晶体管，所述第一薄膜晶体管包括：多晶半导体层，多晶半导体层上的第一栅电极，第一源电极 以及第一漏电极，设置在所述基板的第二区域的第二薄膜晶体管，所述第二薄膜晶体管包括：第二栅电极，所述第二栅电极上的氧化物半导体层，第二源电极和 第二漏电极，设置在基板的除了第二区域的区域上的氮化物层，覆盖第一栅电极的氮化物层和设置在第一栅极电极和第二栅电极之上的氧化物层， 氧化物半导体层。

公开(公告)号：US20240074236A1

公开(公告)日：2024-02-29

申请号：US18221191

申请日：2023-07-12

Applicant: LG Display Co., Ltd

Inventor： Sunyoung CHOI ,  Dongchae SHIN ,  Sungjin LEE

IPC: H10K59/121 ,  H10K59/131 ,  H10K59/80

CPC classification number: H10K59/1213 ,  H10K59/1216 ,  H10K59/1315 ,  H10K59/8792

Abstract: A display device can include a first transistor disposed in a display area of a substrate, the first transistor including a first semiconductor layer, a first gate electrode, a first source electrode and a first drain electrode; a second transistor disposed a non-display area of the substrate, the second transistor including a second semiconductor layer, a second gate electrode, a second source electrode and a second drain electrode; and a first insulating layer disposed across the first oxide transistor and the second polycrystalline silicon transistor. Also, the display device can further include at least one capacitor disposed on the first insulating layer. Also, the first transistor can be an oxide transistor, the second transistor can be a polycrystalline silicon transistor, and the at least one capacitor can include a material configured to absorb hydrogen.

公开(公告)号：US20150243688A1

公开(公告)日：2015-08-27

申请号：US14629538

申请日：2015-02-24

Applicant: LG Display Co., Ltd.

Inventor： Youngjang LEE ,  Kyungmo SON ,  Seongpil CHO ,  Jaehoon PARK ,  Sohyung LEE ,  Sangsoon NOH ,  Moonho PARK ,  Sungjin LEE ,  Seunghyo KO ,  Mijin JEONG

IPC: H01L27/12 ,  H01L27/32

CPC classification number: H01L27/1251 ,  H01L27/1222 ,  H01L27/1225 ,  H01L27/1237 ,  H01L27/3262 ,  H01L29/7869

Abstract: Provided are a thin film transistor substrate and a display using the same. A display includes: a first area, a second area, a first thin film transistor disposed at the first area, the first thin film transistor including: a polycrystalline semiconductor layer, a first gate electrode on the polycrystalline semiconductor layer, a first source electrode, and a first drain electrode, a second thin film transistor disposed at the second area, the second thin film transistor including: a second gate electrode, an oxide semiconductor layer on the second gate electrode, a second source electrode, and a second drain electrode, a nitride layer on an area of the display device, other than the second area, the nitride layer covering the first gate electrode, and an oxide layer disposed over the first gate electrode and the second gate electrode.

Abstract translation: 提供薄膜晶体管基板和使用其的显示器。 显示器包括：第一区域，第二区域，设置在第一区域的第一薄膜晶体管，所述第一薄膜晶体管包括：多晶半导体层，多晶半导体层上的第一栅电极，第一源电极， 以及第一漏极，设置在所述第二区的第二薄膜晶体管，所述第二薄膜晶体管包括：第二栅极，所述第二栅电极上的氧化物半导体层，第二源极和第二漏极， 显示装置的除了第二区域的区域上的氮化物层，覆盖第一栅电极的氮化物层和设置在第一栅电极和第二栅电极之上的氧化物层。

公开(公告)号：US20150243687A1

公开(公告)日：2015-08-27

申请号：US14628444

申请日：2015-02-23

Applicant: LG Display Co., Ltd.

Inventor： Youngjang LEE ,  Kyungmo SON ,  Sohyung LEE ,  Hoyoung JUNG ,  Moonho PARK ,  Sungjin LEE

IPC: H01L27/12 ,  H01L29/786 ,  H01L27/32 ,  H01L29/04

CPC classification number: H01L27/1251 ,  H01L27/1225 ,  H01L27/1248 ,  H01L27/3244 ,  H01L29/04 ,  H01L29/78675 ,  H01L29/7869

Abstract: Provided are a thin film transistor substrate and a display using the same. A thin film transistor substrate includes: a substrate, a first thin film transistor disposed on the substrate, the first thin film transistor including: a polycrystalline semiconductor layer, a first gate electrode on the polycrystalline semiconductor layer, a first source electrode, and a first drain electrode, a second thin film transistor disposed on the substrate, the second thin film transistor including: a second gate electrode, an oxide semiconductor layer on the second gate electrode, a second source electrode, and a second drain electrode, an intermediate insulating layer including a nitride layer and an oxide layer on the nitride layer, the intermediate insulating layer being disposed on the first gate electrode and the second gate electrode and under the oxide semiconductor layer, and an etch-stopper layer disposed on the oxide semiconductor layer.

Abstract translation: 提供一种薄膜晶体管基板和使用其的显示器。 薄膜晶体管基板包括：基板，设置在基板上的第一薄膜晶体管，所述第一薄膜晶体管包括：多晶半导体层，多晶半导体层上的第一栅电极，第一源极和第一 漏电极，设置在所述基板上的第二薄膜晶体管，所述第二薄膜晶体管包括：第二栅电极，所述第二栅电极上的氧化物半导体层，第二源电极和第二漏电极，中间绝缘层 包括在所述氮化物层上的氮化物层和氧化物层，所述中间绝缘层设置在所述第一栅电极和所述第二栅电极上以及所述氧化物半导体层下方，以及设置在所述氧化物半导体层上的蚀刻停止层。

公开(公告)号：US20190237493A1

公开(公告)日：2019-08-01

申请号：US16377136

申请日：2019-04-05

Applicant: LG Display Co., Ltd.

Inventor： Youngjang LEE ,  Kyungmo SON ,  Sohyung LEE ,  Moonho PARK ,  Sungjin LEE

IPC: H01L27/12 ,  H01L29/04 ,  H01L29/786 ,  G02F1/1368 ,  G02F1/1362 ,  H01L27/32

CPC classification number: H01L27/1251 ,  G02F1/13624 ,  G02F1/1368 ,  G02F2001/13685 ,  H01L21/8221 ,  H01L27/1214 ,  H01L27/1225 ,  H01L27/1248 ,  H01L27/3244 ,  H01L29/04 ,  H01L29/78675 ,  H01L29/7869

Abstract: The present disclosure relates to a thin film transistor substrate having two different types of thin film transistors on the same substrate. A thin film transistor substrate includes a substrate; a first thin film transistor disposed on the substrate, the first thin film transistor including a poly crystalline semiconductor layer, a first gate electrode over the poly crystalline semiconductor layer, a first source electrode, and a first drain electrode; a second thin film transistor disposed on the substrate, the second thin film transistor including a second gate electrode, an oxide semiconductor layer over the second gate electrode, a second source electrode, and a second drain electrode; and an intermediate insulating layer including a nitride layer and an oxide layer on the nitride layer, the intermediate insulating layer disposed over the first gate electrode and the second gate electrode and under the oxide semiconductor layer.

公开(公告)号：US20150243686A1

公开(公告)日：2015-08-27

申请号：US14628378

申请日：2015-02-23

Applicant: LG DISPLAY CO., LTD.

Inventor： Youngjang LEE ,  Kyungmo SON ,  Sohyung LEE ,  Moonho PARK ,  Sungjin LEE

IPC: H01L27/12 ,  H01L29/786 ,  H01L27/32 ,  H01L29/04

CPC classification number: H01L27/1251 ,  G02F1/13624 ,  G02F1/1368 ,  G02F2001/13685 ,  H01L27/1225 ,  H01L27/1248 ,  H01L27/3244 ,  H01L29/04 ,  H01L29/78675 ,  H01L29/7869

Abstract: The present disclosure relates to a thin film transistor substrate having two different types of thin film transistors on the same substrate. A thin film transistor substrate includes a substrate; a first thin film transistor disposed on the substrate, the first thin film transistor including a poly crystalline semiconductor layer, a first gate electrode over the poly crystalline semiconductor layer, a first source electrode, and a first drain electrode; a second thin film transistor disposed on the substrate, the second thin film transistor including a second gate electrode, an oxide semiconductor layer over the second gate electrode, a second source electrode, and a second drain electrode; and an intermediate insulating layer including a nitride layer and an oxide layer on the nitride layer, the intermediate insulating layer disposed over the first gate electrode and the second gate electrode and under the oxide semiconductor layer.

Abstract translation: 本公开涉及在相同基板上具有两种不同类型的薄膜晶体管的薄膜晶体管基板。 薄膜晶体管基板包括基板; 设置在所述基板上的第一薄膜晶体管，所述第一薄膜晶体管包括多晶半导体层，所述多晶半导体层上的第一栅电极，第一源电极和第一漏电极; 设置在所述基板上的第二薄膜晶体管，所述第二薄膜晶体管包括第二栅电极，所述第二栅电极上的氧化物半导体层，第二源电极和第二漏电极; 以及在所述氮化物层上包括氮化物层和氧化物层的中间绝缘层，所述中间绝缘层设置在所述第一栅电极和所述第二栅电极之上，并且位于所述氧化物半导体层的下方。