公开(公告)号：US11063068B2

公开(公告)日：2021-07-13

申请号：US16575917

申请日：2019-09-19

Applicant: LG Display Co., Ltd.

Inventor： JinChae Jeon ,  SoYoung Noh ,  UiJin Chung ,  Eunsung Kim ,  HyunSoo Shin ,  Wonkyung Kim ,  Jeihyun Lee

IPC: H01L27/12

Abstract: A display apparatus includes a substrate having a first substrate, a second substrate, and an inorganic insulating layer between the first substrate and the second substrate. A first buffer layer is on the substrate, wherein the first buffer layer includes n+1 layers, and ‘n’ is 0 or an even number. A first thin film transistor, a second thin film transistor, and a storage capacitor are each on the first buffer layer. The first thin film transistor includes a first active layer formed of a low temperature poly silicon material. The second thin film transistor includes a second active layer formed of an oxide semiconductor material. The storage capacitor includes a first capacitor electrode and a second capacitor electrode.

公开(公告)号：US09954014B2

公开(公告)日：2018-04-24

申请号：US15245944

申请日：2016-08-24

Applicant: LG DISPLAY CO., LTD.

Inventor： Soyoung Noh ,  Jinchae Jeon ,  Seungchan Choi ,  Junho Lee ,  Youngjang Lee ,  Sungbin Ryu ,  Kitae Kim ,  Bokyoung Cho ,  Jeanhan Yoon ,  Uijin Chung ,  Jihye Lee ,  Eunsung Kim ,  Hyunsoo Shin ,  Kyeongju Moon ,  Hyojin Kim ,  Wonkyung Kim ,  Jeihyun Lee ,  Soyeon Je

IPC: H01L27/12 ,  H01L27/32 ,  H01L49/02 ,  H01L29/417 ,  H01L29/786

CPC classification number: H01L27/1248 ,  H01L27/1225 ,  H01L27/1251 ,  H01L27/1255 ,  H01L27/1288 ,  H01L27/3258 ,  H01L27/3262 ,  H01L28/60 ,  H01L29/41733 ,  H01L29/78675 ,  H01L29/7869

Abstract: A thin film transistor substrate having two different types of thin film transistors on the same substrate, and a display using the same are discussed. The thin film transistor substrate can include a substrate, a first thin film transistor (TFT), a second TFT, a first storage capacitor electrode, an oxide layer, a nitride layer, a second storage capacitor electrode, a planar layer and a pixel electrode. The first TFT is disposed in a first area, the second TFT is disposed in a second area, and the first storage capacitor electrode is disposed in a third area on the substrate respectively. The oxide layer covers the first and second TFTs, and exposes the first storage capacitor electrode. The nitride layer is disposed on the oxide layer and covers the first storage capacitor electrode. The second storage capacitor electrode overlaps with the first storage capacitor electrode on the nitride layer. The planar layer covers the first and second TFTs, and the second storage capacitor electrode. The pixel electrode is disposed on the planar layer.