公开(公告)号：US20190074321A1

公开(公告)日：2019-03-07

申请号：US16121411

申请日：2018-09-04

Applicant: LG DISPLAY CO., LTD.

Inventor： Hyungil NA ,  Hanseok LEE ,  JungJune KIM ,  Seungyong JUNG

IPC: H01L27/146 ,  G01T1/20 ,  H01L29/786

Abstract: An array substrate for a digital X-ray detector can include a base substrate; a thin film transistor disposed on the base substrate; a PIN diode including a lower electrode electrically connected to the thin film transistor, a first PIN layer disposed on the lower electrode, and an upper electrode disposed on the first PIN layer; a second PIN layer spaced apart from the PIN diode, the second PIN layer being disposed on the thin film transistor; and a bias electrode electrically connected to the upper electrode.

公开(公告)号：US20180061868A1

公开(公告)日：2018-03-01

申请号：US15675220

申请日：2017-08-11

Applicant: LG DISPLAY CO., LTD.

Inventor： HyungIl NA ,  JungJune KIM

IPC: H01L27/12 ,  H01L29/423 ,  H01L29/49 ,  H01L29/786 ,  H01L27/32

CPC classification number: H01L27/1251 ,  H01L27/1225 ,  H01L27/1248 ,  H01L27/1255 ,  H01L27/3244 ,  H01L29/42384 ,  H01L29/4908 ,  H01L29/78672 ,  H01L29/78675 ,  H01L29/7869

Abstract: An OLED device includes a low-temperature poly-silicon (LTPS) thin-film transistor having a first channel layer, a first gate electrode, a first source electrode and a first drain electrode; an oxide semiconductor thin-film transistor having a second channel layer, a second gate electrode, a second source electrode and a second drain electrode; and a functional layer between the first channel layer and the first gate electrode. The second channel layer is in contact with an upper surface of the functional layer.

公开(公告)号：US20230329047A1

公开(公告)日：2023-10-12

申请号：US18132847

申请日：2023-04-10

Applicant: LG Display Co., Ltd.

Inventor： YounGyoung CHANG ,  WonSang RYU ,  Youngjin YI ,  Hanseok LEE ,  SungSoo SHIN ,  Jungyul YANG ,  JungJune KIM ,  Jihwan JUNG ,  Soyang CHOI ,  Yubeen LIM

IPC: H01L29/12 ,  G09G3/3233

CPC classification number: H10K59/126 ,  G09G3/3233 ,  G09G2300/0819 ,  G09G2300/0861 ,  G09G2300/0842

Abstract: A thin film transistor substrate can include a first thin film transistor on a substrate, the first thin film transistor including a first active layer and a first gate electrode; and a second thin film transistor on the substrate, the second thin film transistor including a second active layer and a second gate electrode, each of the second active layer and the second gate electrode being located farther away from the substrate than the first active layer and the first gate electrode. Also, the thin film transistor substrate can include a first insulating layer disposed between the first gate electrode and the second active layer; and a first connection electrode connecting the first gate electrode with the second active layer, in which the first connection electrode extends through a first contact hole in the first insulating layer and contacts both of the first gate electrode and the second active layer.

公开(公告)号：US20190072677A1

公开(公告)日：2019-03-07

申请号：US16122097

申请日：2018-09-05

Applicant: LG Display Co., Ltd.

Inventor： Seungyong JUNG ,  Hanseok LEE ,  Hyungil NA ,  JungJune KIM

IPC: G01T1/20 ,  H01L27/146 ,  G01T1/24 ,  H01L27/12

CPC classification number: G01T1/2018 ,  G01T1/241 ,  H01L27/1218 ,  H01L27/1225 ,  H01L27/1288 ,  H01L27/14658 ,  H01L27/14663 ,  H01L27/14692

Abstract: An array substrate for a digital X-ray detector, a digital X-ray detector including the same, and a method for manufacturing the same are provided. A thin film transistor (TFT) array substrate for a digital X-ray detector includes: a base substrate, a thin film transistor over the base substrate, a lower electrode connected to the thin film transistor, a positive-intrinsic-negative (PIN) layer over the lower electrode, the PIN layer including: an N-type semiconductor layer, an intrinsic semiconductor layer, and a P-type semiconductor layer, a bias electrode over the PIN layer, and an upper electrode covering the PIN layer and the bias electrode.