公开(公告)号：US20190170883A1

公开(公告)日：2019-06-06

申请号：US16207580

申请日：2018-12-03

Applicant: LG Display Co., Ltd.

Inventor： Hyungil NA ,  Jungjune KIM ,  Hanseok LEE

IPC: G01T1/20 ,  H01L27/146

Abstract: An array substrate for a digital X-ray detector, a digital X-ray detector including the same, and a method for manufacturing the same are disclosed. The array substrate reduces a step difference of a PIN diode, removes a bent part from a lower part to reduce characteristic deterioration of the PIN diode, and increases the size of a formation region of the PIN diode to increase a fill factor. To this end, the array substrate allows a source region of an active layer included in a thin film transistor to be in surface contact with a lower electrode of the PIN diode, and disposes the lower electrode over a planarized source region or a base substrate, such that a step difference of the PIN diode is reduced and fill factor is improved.

公开(公告)号：US20200301029A1

公开(公告)日：2020-09-24

申请号：US16895785

申请日：2020-06-08

Applicant: LG Display Co., Ltd.

Inventor： Hyungil NA ,  Jungjune KIM ,  Hanseok LEE

IPC: G01T1/20 ,  H01L27/146

Abstract: An array substrate for a digital X-ray detector, a digital X-ray detector including the same, and a method for manufacturing the same are disclosed. The array substrate reduces a step difference of a PIN diode, removes a bent part from a lower part to reduce characteristic deterioration of the PIN diode, and increases the size of a formation region of the PIN diode to increase a fill factor. To this end, the array substrate allows a source region of an active layer included in a thin film transistor to be in surface contact with a lower electrode of the PIN diode, and disposes the lower electrode over a planarized source region or a base substrate, such that a step difference of the PIN diode is reduced and fill factor is improved.

公开(公告)号：US20200379132A1

公开(公告)日：2020-12-03

申请号：US16886127

申请日：2020-05-28

Applicant: LG DISPLAY CO., LTD.

Inventor： Hyungil NA ,  Minseok YUN ,  Sangmo BYUN

IPC: G01T1/20

Abstract: A digital X-ray detector, a digital X-ray detection device and a manufacturing method thereof are discussed. The digital X-ray detector includes a base substrate including an active region including a plurality of pixel regions, and a gate-in-panel (GIP) region as at least one side region to the active region; a PIN diode disposed in the active region and over the base substrate; a GIP driver disposed in the GIP region and over the base substrate; and a scintillator layer disposed over the PIN diode and the GIP driver so as to overlay the active region and at least a portion of the GIP region. In the present invention, damage of the driver due to X-ray is minimized while a bezel size is minimized.

公开(公告)号：US20190198558A1

公开(公告)日：2019-06-27

申请号：US16223886

申请日：2018-12-18

Applicant: LG Display Co., Ltd.

Inventor： Hyeji JEON ,  Seungyong JUNG ,  Hanseok LEE ,  Hyungil NA ,  Jungjune KIM

IPC: H01L27/146 ,  H01L31/105 ,  H01L31/0224 ,  H01L31/0216 ,  H01L31/0232 ,  G01T1/20

CPC classification number: H01L27/14663 ,  G01T1/2018 ,  H01L27/14612 ,  H01L27/14636 ,  H01L31/02161 ,  H01L31/022408 ,  H01L31/022466 ,  H01L31/02322 ,  H01L31/105

Abstract: An array substrate for a digital X-ray detector, and an X-ray detector including the same are disclosed, which reduce or minimize a contact resistance between a bias electrode and a PIN diode, and also improve a fill factor of the PIN diode. In the array substrate, a dual bias electrode in which a second bias electrode formed of a transparent conductive material is connected to a first bias electrode that is additionally connected to an upper electrode of the PIN diode, such that total resistance of the bias electrodes is reduced and a line width of the first bias electrode formed of a non-transparent material is reduced, resulting in an increased fill factor of the PIN diode.

公开(公告)号：US20190074321A1

公开(公告)日：2019-03-07

申请号：US16121411

申请日：2018-09-04

Applicant: LG DISPLAY CO., LTD.

Inventor： Hyungil NA ,  Hanseok LEE ,  JungJune KIM ,  Seungyong JUNG

IPC: H01L27/146 ,  G01T1/20 ,  H01L29/786

Abstract: An array substrate for a digital X-ray detector can include a base substrate; a thin film transistor disposed on the base substrate; a PIN diode including a lower electrode electrically connected to the thin film transistor, a first PIN layer disposed on the lower electrode, and an upper electrode disposed on the first PIN layer; a second PIN layer spaced apart from the PIN diode, the second PIN layer being disposed on the thin film transistor; and a bias electrode electrically connected to the upper electrode.

公开(公告)号：US20190165008A1

公开(公告)日：2019-05-30

申请号：US16197170

申请日：2018-11-20

Applicant: LG Display Co., Ltd.

Inventor： Hanseok LEE ,  Hyungil NA ,  Jungjune KIM ,  Seungyong JUNG

IPC: H01L27/146 ,  H01L31/0224 ,  G01T1/20 ,  G01T1/208

Abstract: An array substrate for a digital X-ray detector and the digital X-ray detector including the same are disclosed. The array substrate effectively protects a PIN diode from external moisture or water, maximizes a light transmission region of a PIN diode, and reduces resistance by maximizing the region of a bias wiring. To this end, a closed-loop bias electrode formed to cover a circumferential surface of a PIN diode is used. In detail, the bias electrode includes a closed loop portion and a contact extension portion. The contact extension portion extends from one end of the closed loop portion so as to directly contact an upper electrode, and includes a hollow part therein.

公开(公告)号：US20190072677A1

公开(公告)日：2019-03-07

申请号：US16122097

申请日：2018-09-05

Applicant: LG Display Co., Ltd.

Inventor： Seungyong JUNG ,  Hanseok LEE ,  Hyungil NA ,  JungJune KIM

IPC: G01T1/20 ,  H01L27/146 ,  G01T1/24 ,  H01L27/12

CPC classification number: G01T1/2018 ,  G01T1/241 ,  H01L27/1218 ,  H01L27/1225 ,  H01L27/1288 ,  H01L27/14658 ,  H01L27/14663 ,  H01L27/14692

Abstract: An array substrate for a digital X-ray detector, a digital X-ray detector including the same, and a method for manufacturing the same are provided. A thin film transistor (TFT) array substrate for a digital X-ray detector includes: a base substrate, a thin film transistor over the base substrate, a lower electrode connected to the thin film transistor, a positive-intrinsic-negative (PIN) layer over the lower electrode, the PIN layer including: an N-type semiconductor layer, an intrinsic semiconductor layer, and a P-type semiconductor layer, a bias electrode over the PIN layer, and an upper electrode covering the PIN layer and the bias electrode.