Display Device
    1.
    发明公开
    Display Device 审中-公开

    公开(公告)号:US20240224631A1

    公开(公告)日:2024-07-04

    申请号:US18529058

    申请日:2023-12-05

    CPC classification number: H10K59/126 H10K59/1213 H10K59/122

    Abstract: A display device includes a substrate including an active area including a plurality of pixels and a non-active area located to surround the active area; a first thin film transistor disposed on the substrate and a second thin film transistor disposed to be spaced apart from the first thin film transistor; a planarization layer covering the first thin film transistor and the second thin film transistor; a first shielding layer disposed on the planarization layer; a light emitting element including an anode disposed on the planarization layer to be spaced apart from the first shielding layer; and a second shielding layer disposed on the anode. Accordingly, reliability of the display device can be improved by increasing a light shielding area in the display device.

    Thin film transistor substrate and method for manufacturing the same
    2.
    发明授权
    Thin film transistor substrate and method for manufacturing the same 有权
    薄膜晶体管基板及其制造方法

    公开(公告)号:US08877573B2

    公开(公告)日:2014-11-04

    申请号:US14047501

    申请日:2013-10-07

    Inventor: KiTae Kim

    Abstract: A thin film transistor substrate and a method for manufacturing the same are discussed, in which the thin film transistor comprises a gate line and a data line arranged on a substrate to cross each other; a gate electrode connected with the gate line below the gate line; an active layer formed on the gate electrode; an etch stopper formed on the active layer; an ohmic contact layer formed on the etch stopper; source and drain electrodes formed on the ohmic contact layer; and a pixel electrode connected with the drain electrode. It is possible to prevent a crack from occurring in the gate insulating film during irradiation of the laser and prevent resistance of the gate electrode from being increased.

    Abstract translation: 讨论薄膜晶体管基板及其制造方法,其中薄膜晶体管包括布置在基板上以彼此交叉的栅极线和数据线; 栅极电极,与栅极线下方的栅极线连接; 形成在栅电极上的有源层; 形成在有源层上的蚀刻停止层; 形成在蚀刻停止器上的欧姆接触层; 源极和漏极形成在欧姆接触层上; 以及与漏电极连接的像素电极。 可以防止在激光照射期间在栅极绝缘膜中发生裂纹,并且防止栅电极的电阻增加。

    Display device having a plurality of thin-film transistors with different semiconductors

    公开(公告)号:US11056509B2

    公开(公告)日:2021-07-06

    申请号:US16529424

    申请日:2019-08-01

    Inventor: Soyeon Je KiTae Kim

    Abstract: A display device includes a substrate; a buffer layer disposed on the substrate; a first thin-film transistor comprising a first active layer made of a low-temperature poly-silicon (LTPS), a first gate electrode overlapping with the first active layer with the first gate insulating layer and the second gate insulating layer therebetween, and a first source electrode and a first drain electrode electrically connected to the first active layer; and a second thin-film transistor comprising a second active layer made of an oxide semiconductor, a second gate electrode overlapping with the second active layer with the second gate insulating layer therebetween, and a second source electrode and a second drain electrode electrically connected to the second active layer. The first gate electrode of the first thin-film transistor and the second gate electrode of the second thin-film transistor may be disposed on the second gate insulating layer.

    Thin Film Transistor and Display Device Including the Same

    公开(公告)号:US20240222463A1

    公开(公告)日:2024-07-04

    申请号:US18514318

    申请日:2023-11-20

    CPC classification number: H01L29/4908 H01L29/78648 H10K59/124 H01L29/7869

    Abstract: Disclosed is a thin film transistor and a display device including the same. The thin film transistor includes a first buffer layer; a lower gate electrode on the first buffer layer; a second buffer layer on the lower gate electrode; an active layer on the second buffer layer and including a source region, a drain region, and a channel region between the source region and the drain region; a gate insulating layer on the active layer; and an upper gate electrode on the gate insulating layer. At least one of the upper gate electrode and the lower gate electrode includes a plurality of layers, and a work function of a layer adjacent to the active layer is greater than a work function of a layer far from the active layer, among the plurality of layers.

    Organic light emitting diode display

    公开(公告)号:US10916218B2

    公开(公告)日:2021-02-09

    申请号:US15634576

    申请日:2017-06-27

    Abstract: Provided is an organic light emitting display. The organic light emitting display can include a gate driving circuit configured to supply a gate signal through each of a plurality of gate lines connected to a display panel, and a luminance control unit between the gate driving circuit and the display panel and electrically connected to the plurality of gate lines and a power supply line. A gate signal is supplied to the pixels in a distributed manner during a plurality of refresh periods. Therefore, it is possible to reduce a luminance decrease in the pixels during the entire refresh period.

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