公开(公告)号：US09214508B2

公开(公告)日：2015-12-15

申请号：US14628411

申请日：2015-02-23

Applicant: LG Display Co., Ltd.

Inventor： Seongpil Cho ,  Yongil Kim

IPC: H01L29/12 ,  H01L27/32 ,  H01L27/12 ,  H01L29/786 ,  H01L29/04

CPC classification number: H01L27/1251 ,  G02F1/1362 ,  H01L27/1225 ,  H01L27/124 ,  H01L27/3262 ,  H01L27/3276 ,  H01L29/04 ,  H01L29/78606 ,  H01L29/78675 ,  H01L29/7869

Abstract: Provided are a thin film transistor (TFT) substrate and a display using the same. A TFT substrate includes: a substrate, a first TFT on the substrate, including: a polycrystalline semiconductor layer, a first gate electrode thereover, a first source electrode, and a first drain electrode, a second TFT on the substrate, including: a second gate electrode, an oxide semiconductor layer on the second gate electrode, a second source electrode, and a second drain electrode, an intermediate insulating layer including a nitride layer, on the first gate electrode, and an oxide layer covering the second gate electrode, on the intermediate insulating layer, on the oxide layer, and overlapping the second gate electrode, wherein the first source, first drain, and second gate electrodes are between the intermediate insulating layer and the oxide layer, and wherein the second source and the second drain electrodes are on the oxide semiconductor layer.

Abstract translation: 提供薄膜晶体管（TFT）基板和使用其的显示器。 TFT基板包括：基板，在基板上的第一TFT，包括：多晶半导体层，其上的第一栅电极，第一源电极和第一漏电极，基板上的第二TFT，包括：第二TFT 栅电极，第二栅电极上的氧化物半导体层，第二源电极和第二漏电极，在第一栅电极上包括氮化物层的中间绝缘层和覆盖第二栅电极的氧化物层，在 所述中间绝缘层在所述氧化物层上并且与所述第二栅电极重叠，其中所述第一源极，第一漏极和所述第二栅电极位于所述中间绝缘层和所述氧化物层之间，并且其中所述第二源极和所述第二漏极 在氧化物半导体层上。

公开(公告)号：US10903246B2

公开(公告)日：2021-01-26

申请号：US14629538

申请日：2015-02-24

Applicant: LG Display Co., Ltd.

Inventor： Youngjang Lee ,  Kyungmo Son ,  Seongpil Cho ,  Jaehoon Park ,  Sohyung Lee ,  Sangsoon Noh ,  Moonho Park ,  Sungjin Lee ,  Seunghyo Ko ,  Mijin Jeong

IPC: H01L27/12 ,  H01L29/786 ,  H01L27/32

Abstract: Provided are a thin film transistor substrate and a display using the same. A display includes: a first area, a second area, a first thin film transistor disposed at the first area, the first thin film transistor including: a polycrystalline semiconductor layer, a first gate electrode on the polycrystalline semiconductor layer, a first source electrode, and a first drain electrode, a second thin film transistor disposed at the second area, the second thin film transistor including: a second gate electrode, an oxide semiconductor layer on the second gate electrode, a second source electrode, and a second drain electrode, a nitride layer on an area of the display device, other than the second area, the nitride layer covering the first gate electrode, and an oxide layer disposed over the first gate electrode and the second gate electrode.

公开(公告)号：US09881986B2

公开(公告)日：2018-01-30

申请号：US14629544

申请日：2015-02-24

Applicant: LG Display Co., Ltd.

Inventor： Seongpil Cho ,  Yongil Kim

IPC: H01L29/10 ,  H01L29/04 ,  H01L27/32 ,  H01L29/786 ,  H01L27/12

CPC classification number: H01L27/3276 ,  H01L27/1225 ,  H01L27/1251 ,  H01L27/3262 ,  H01L29/04 ,  H01L29/78606 ,  H01L29/7869

Abstract: Provided are a thin film transistor (TFT) substrate and a display using the same. A display includes: a first TFT, including: a polycrystalline semiconductor layer, a first gate electrode thereover, a first source electrode, and a first drain electrode, a second TFT, including: a second gate electrode, an oxide semiconductor layer over the second gate electrode, a second source electrode, and a second drain electrode, an intermediate insulating layer including a nitride layer, on the first gate electrode, and an oxide layer covering the second gate electrode, on the intermediate insulating layer, on the oxide layer, and overlapping the second gate electrode, wherein the first source, first drain, and second gate electrodes are between the intermediate insulating layer and the oxide layer, and wherein the second source and the second drain electrodes are on the oxide semiconductor layer.

公开(公告)号：US10186528B2

公开(公告)日：2019-01-22

申请号：US14628357

申请日：2015-02-23

Applicant: LG Display Co., Ltd.

Inventor： Youngjang Lee ,  Kyungmo Son ,  Seongpil Cho ,  Jaehoon Park ,  Sohyung Lee ,  Sangsoon Noh ,  Moonho Park ,  Sungjin Lee ,  Seunghyo Ko ,  Mijin Jeong

IPC: H01L27/12 ,  H01L29/786 ,  H01L27/32

Abstract: Provided are a thin film transistor substrate and a display using the same. A thin film transistor substrate includes: a substrate, a first thin film transistor disposed at a first area of the substrate, the first thin film transistor including: a polycrystalline semiconductor layer, a first gate electrode on the polycrystalline semiconductor layer, a first source electrode, and a first drain electrode, a second thin film transistor disposed at a second area of the substrate, the second thin film transistor including: a second gate electrode, an oxide semiconductor layer on the second gate electrode, a second source electrode, and a second drain electrode, a nitride layer disposed on an area of the substrate, other than the second area, the nitride layer covering the first gate electrode, and an oxide layer disposed: over the first gate electrode and the second gate electrode, and under the oxide semiconductor layer.

公开(公告)号：US09455279B2

公开(公告)日：2016-09-27

申请号：US14921099

申请日：2015-10-23

Applicant: LG Display Co., Ltd.

Inventor： Seongpil Cho ,  Yongil Kim

IPC: H01L27/32 ,  H01L27/12 ,  G02F1/1362 ,  H01L29/786 ,  H01L29/04

CPC classification number: H01L27/1251 ,  G02F1/1362 ,  H01L27/1225 ,  H01L27/124 ,  H01L27/3262 ,  H01L27/3276 ,  H01L29/04 ,  H01L29/78606 ,  H01L29/78675 ,  H01L29/7869

Abstract: Provided are a thin film transistor (TFT) substrate and a display using the same. A TFT substrate includes: a substrate, a first TFT on the substrate, including: a polycrystalline semiconductor layer, a first gate electrode thereover, a first source electrode, and a first drain electrode, a second TFT on the substrate, including: a second gate electrode, an oxide semiconductor layer on the second gate electrode, a second source electrode, and a second drain electrode, an intermediate insulating layer including a nitride layer, on the first gate electrode, and an oxide layer covering the second gate electrode, on the intermediate insulating layer, on the oxide layer, and overlapping the second gate electrode, wherein the first source, first drain, and second gate electrodes are between the intermediate insulating layer and the oxide layer, and wherein the second source and the second drain electrodes are on the oxide semiconductor layer.

Abstract translation: 提供薄膜晶体管（TFT）基板和使用其的显示器。 TFT基板包括：基板，在基板上的第一TFT，包括：多晶半导体层，其上的第一栅电极，第一源电极和第一漏电极，基板上的第二TFT，包括：第二TFT 栅电极，第二栅电极上的氧化物半导体层，第二源电极和第二漏电极，在第一栅电极上包括氮化物层的中间绝缘层和覆盖第二栅电极的氧化物层，在 所述中间绝缘层在所述氧化物层上并且与所述第二栅电极重叠，其中所述第一源极，第一漏极和所述第二栅电极位于所述中间绝缘层和所述氧化物层之间，并且其中所述第二源极和所述第二漏极 在氧化物半导体层上。