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公开(公告)号:US20170192134A1
公开(公告)日:2017-07-06
申请号:US15394328
申请日:2016-12-29
Applicant: LG DISPLAY CO., LTD. , NANO Solution CO., LTD
Inventor: Junsik HWANG , Kwihong PARK , Yonggyoon JANG , Sungwook KO , Hyungyul KIM , Hojun MOON
IPC: G02B1/16 , G02F1/1335 , G02F1/1333 , C09D5/24
Abstract: Provided is a display device having an antistatic film comprising a conductive coating liquid composition. The conductive coating liquid composition comprises 10 to 100 parts by weight of a silane sol based on 100 parts by weight of a carbon nanotube dispersion liquid composition, and the silane sol comprises 0.01 to 10 wt % of an acid catalyst with a pH of 3.0 to 6.0 based on the total weight of the silane sol.
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公开(公告)号:US20180182833A1
公开(公告)日:2018-06-28
申请号:US15837353
申请日:2017-12-11
Applicant: LG Display Co., Ltd.
Inventor: Changeun KIM , Yonggyoon JANG , Jeongeun BAEK , Sungjin KIM
IPC: H01L27/32 , H01L29/49 , H01L27/28 , H01L27/12 , H01L29/66 , G02F1/1368 , G02F1/1362
CPC classification number: H01L27/3262 , G02F1/136227 , G02F1/1368 , H01L27/1225 , H01L27/1288 , H01L27/283 , H01L27/3246 , H01L27/3248 , H01L27/3274 , H01L29/1033 , H01L29/4908 , H01L29/6675 , H01L29/78681 , H01L29/7869 , H01L29/78696
Abstract: A thin-film transistor array substrate and a display device are disclosed. The thin-film transistor array substrate includes a substrate, a gate electrode disposed on the substrate, an active layer, which opposites the gate electrode, has a first region and a second region having different thicknesses, and comprises at least a semiconductor material, a gate insulating film interposed between the gate electrode and the active layer, and a source electrode and a drain electrode, which are respectively in contact with the active layer.
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公开(公告)号:US20180097062A1
公开(公告)日:2018-04-05
申请号:US15715059
申请日:2017-09-25
Applicant: LG Display Co., Ltd.
Inventor: Changeun KIM , Jeongeun BAEK , Yonggyoon JANG , Sungjin KIM
IPC: H01L29/10 , H01L29/227 , H01L29/24 , H01L51/05
Abstract: A carbon allotrope and a display device including the same are disclosed. The thin-film transistor array substrate, comprising a substrate, a gate electrode on the substrate, an active layer comprising a first active layer, which opposes the gate electrode and is adjacent to the gate electrode thereby comprising a semiconductor material and a plurality of carbon allotropes, and a second active layer, which is in contact with the first active layer and comprises a semiconductor material, a gate insulating film between the gate electrode and the active layer, and a source electrode and a drain electrode respectively in contact with the active layer.
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